Optical Spectroscopy of InGaAs/GaAs Coupled Quantum Dots PDF Download
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Author: Michael Reimer
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Author: Michael Reimer
Publisher:
ISBN:
Category :
Languages : en
Pages : 220
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Author: Paul William Fry
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Publisher: Academic Press
ISBN: 0080864589
Category : Technology & Engineering
Languages : en
Pages : 385
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This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Author: Ruth Oulton
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Shilpa Sanwlani
Publisher:
ISBN:
Category : Optical spectroscopy
Languages : en
Pages :
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Over the past decade, potential device applications have fueled an extensive effort to fabricate lateral arrays of quantum dots (QDs) with specific dot densities, spacings and size distributions. An essential element for the further development of QD devices with new functionalities is the introduction of controllable quantum coupling between two or more QDs in such an array. Tunable quantum coupling between vertically stacked InAs QDs has been demonstrated, with the coupling mediated by coherent tunneling and tunable with a static electric field. While these studies have revealed that the spatial arrangement of QDs can lead to remarkable effects, it will be impossible to scale vertical coupling to a large number of QDs. Investigations of lateral quantum coupling have been slower to develop, however, because special growth protocols are required and the ability to independently tune the luminescence energy of separate QDs is lost. Spectroscopy of single pairs of laterally separated QDs is required to resolve the signatures of quantum coupling from inhomogeneously broadened ensemble spectra. Laterally-coupled quantum dots require modified sample preparation methods to isolate single pairs of QDs and apply electric fields that tune the relative energies of the two dots. The electric field must be applied along the surface of the sample, perpendicular to the growth direction. To apply this lateral field, we use interdigitated electrodes patterned onto the sample surface with photolithography and metal deposition. Electrical connections are made to each of the interdigitated top contacts as well as to an ohmic back contact. This three-terminal arrangement makes it possible to independently control both the relative energies of the dots and the charging of the QDs. We present photoluminescence spectra of laterally coupled QDs whose coupling and charge states are tuned with this three-terminal arrangement. We further discuss the implications and opportunities for control of quantum coupling in laterally-scalable architectures.
Author: V. A. Shalygin
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Results of a photo- and electroluminescence study of vertically coupled in(o.5)Ga?0.5)As/GaAs quantum dot structures with extended waveguide (1.24 micrometers thick) are presented. Spectra of spontaneous and stimulated near-infrared (lambda about 1 micrometer) emission as well as spectra of spontaneous mid-infrared (lambda about 12 micrometers) emission are obtained under optical and electrical pumping. It is shown that the observed mid-infrared emission is connected with intraband electron optical transitions in the quantum dot structtures.
Author: Saumya Sengupta
Publisher: Springer
ISBN: 9811057028
Category : Technology & Engineering
Languages : en
Pages : 77
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This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.
Author: Zhiming M Wang
Publisher: Springer Science & Business Media
ISBN: 0387741917
Category : Technology & Engineering
Languages : en
Pages : 470
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This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.
Author: Gemma Fernandez Lopez
Publisher:
ISBN:
Category :
Languages : en
Pages : 57
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Author: Kevin L. Silverman
Publisher:
ISBN:
Category : Optical wave guides
Languages : en
Pages : 286
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