Author: Wanxi Kan
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description

Author: Matthew Pelliccione
Publisher: Springer Science & Business Media
ISBN: 0387751092
Category : Technology & Engineering
Languages : en
Pages : 206

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Book Description
The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

Author: Huifang Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages : 268

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Book Description

Author: Michael J. Aziz
Publisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448

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Book Description
"The papers compiled in this volume were presented in Symposium W, 'Morphological and Compositional Evolution of Thin Films, ' held December 2-5 at the 2002 MRS Fall Meeting in Boston Massachusetts. They are organized in the order that they were presented."--P. xiii.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 11

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Book Description
The boundary element method for elastostatics is applied to a thin stability problem arising in solid state surface science. An aim of this work is to determine the morphology of Ge deposited on a Si substrate. Nonstandard boundary conditions at the material interface are used to model the epitaxially grown film. In addition to determining the deformed geometry, it is also necessary to compute the surface stress tensor. Although the surface displacement at the junction between the interface and the Si free surface is not differentiable, the hypersingular integral equation for surface stress can still be used. These techniques are described along with results from 2-D calculations.

Author: B. G. Demczyk
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 696

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Steven C. Moss
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 904

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Book Description
An interdisciplinary group of materials scientists, physicists, chemists and engineers come together in this book to discuss recent advances in the structure and morphology of thin films. Both scientific and technological issues are addressed. Work on thin films for a host of applications including microelectronics, optics, tribology, biomedical technologies and microelectromechanical systems (MEMS) are featured. Topics include: kinetics of growth; grain growth; instabilities, segregation and ordering; silicides; metallization; stresses in thin films; deposition and growth simulations; energetic growth processes; diamond films and carbide and nitride films.

Author: F. M. Borodich
Publisher: Springer Science & Business Media
ISBN: 1402090331
Category : Science
Languages : en
Pages : 311

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Book Description
This volume constitutes the Proceedings of the IUTAM Symposium on ‘Scaling in Solid Mechanics’, held in Cardiff from 25th to 29th June 2007. The Symposium was convened to address and place on record topical issues in theoretical, experimental and computational aspects of scaling approaches to solid mechanics and related elds. Scaling is a rapidly expanding area of research having multidisciplinary - plications. The expertise represented in the Symposium was accordingly very wide, and many of the world’s greatest authorities in their respective elds participated. Scaling methods apply wherever there is similarity across many scales or one need to bridge different scales, e. g. the nanoscale and macroscale. The emphasis in the Symposium was upon fundamental issues such as: mathematical foundations of scaling methods based on transformations and connections between multi-scale approaches and transformations. The Symposium remained focussed on fundam- tal research issues of practical signi cance. The considered topics included damage accumulation, growth of fatigue cracks, development of patterns of aws in earth’s core and inice, abrasiveness of rough surfaces, and soon. The Symposium consisted of forty-two oral presentations. All of the lectures were invited. Full record of the programme appears as an Appendix. Several of the lectures are not represented, mainly because of prior commitments to publish elsewhere. The proceedings p- vide a reasonable picture of understanding as it exists at present. The Symposium showed that scaling methods cannot be reduced solely to dimensional analysis and fractal approaches.

Author: J. Mirecki Millunchick
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 360

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420026585
Category : Technology & Engineering
Languages : en
Pages : 1248

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Book Description
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.