Author: Rodolfo Aguirre (II)
Publisher:
ISBN:
Category : Cadmium telluride
Languages : en
Pages : 59

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Nimetallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 deg. C to 300 deg. C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cuat the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2.We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Author: Upendra Avachat
Publisher:
ISBN:
Category :
Languages : en
Pages : 65

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This research work focuses on developing various back contacts with good transparency in the infrared region (~750 - 1150 nm) for a CdS/CdTe solar cell. CdS/CdTe solar cells were prepared with three different configurations, Glass/SnO2:F/CdS/CdTe/ZnTe:Cu/ITO/Ni-Al (series 1), Glass/SnO2:F/CdS/CdTe/Cu2Te/ITO/Ni-Al (series 2), Glass/SnO2:F/CdS/CdTe/Br-Me etching/Cu/ITO/Ni-Al (series 3).

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 5

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Book Description
Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100 C to 300 C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 4

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Book Description
The main focus of the work at NREL was on the development of Cu-doped ZnTe contacts to CdTe solar cells in the substrate configuration. The work performed under the CRADA utilized the substrate device structure used at NREL previously. All fabrication was performed at NREL. We worked on the development of Cu-doped ZnTe as well as variety of other contacts such as Sb-doped ZnTe, CuxTe, and MoSe2. We were able to optimize the contacts to improve device parameters. The improvement was obtained primarily through increasing the open-circuit voltage, to values as high as 760 mV, leading to device efficiencies of 7%.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 7

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The ability to produce high-performance CdS/CdTe photovoltaic (PV) devices that incorporate high-transparency back contacts for multijunction thin-film PV applications will require an even greater level of understanding than has been required for single-junction devices. This study reports some of our initial investigations at NREL to modify the ZnTe:Cu contact process previously developed for single-junction applications for optimal use as a transparent back contact. We have succeeded in producing devices incorporating a transparent ZnTe:Cu/ITO/metal-grid contact that demonstrates nominally identical light I-V (LIV) performance to the ZnTe:Cu/Ti contact used in single-junction devices. However, we have determined that the transparent conducting oxide (TCO), CdS, CdTe, and ZnTe:Cu layers are all factors in the optical absorption within the device. Finally, we have concluded that optimizing the transparent ZnTe:Cu contact for use with NREL-produced device material will require a more detailed understanding of the evolution of the junction region during the contact process.

Author: Chitra Narayanswamy
Publisher:
ISBN:
Category : Secondary ion mass spectrometry
Languages : en
Pages : 146

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Author:
Publisher: Elsevier
ISBN: 0080965148
Category : Science
Languages : en
Pages : 292

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Book Description
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. - Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT - Review of the CdTe recent developments - Fundamental background of many topics clearly introduced and exposed