Modeling Self-Heating Effects in Nanoscale Devices PDF Download
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Author: D Vasileska
Publisher: Myprint
ISBN: 9781681748061
Category :
Languages : en
Pages : 108
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Book Description
Author: D Vasileska
Publisher: Myprint
ISBN: 9781681748061
Category :
Languages : en
Pages : 108
Get Book
Book Description
Author: Katerina Raleva
Publisher:
ISBN: 9781681742519
Category : TECHNOLOGY & ENGINEERING
Languages : en
Pages : 94
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Book Description
Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modeling methods that must be employed in order to determine a device's temperature profile.
Author: Katerina Raleva
Publisher: Morgan & Claypool Publishers
ISBN: 1681741237
Category : Science
Languages : en
Pages : 108
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Book Description
It is generally acknowledged that modeling and simulation are preferred alternatives to trial and error approaches to semiconductor fabrication in the present environment, where the cost of process runs and associated mask sets is increasing exponentially with successive technology nodes. Hence, accurate physical device simulation tools are essential to accurately predict device and circuit performance. Accurate thermal modelling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modelling methods that must be employed in order to determine a device's temperature profile.
Author: Zlatan Aksamija
Publisher: CRC Press
ISBN: 1351609440
Category : Science
Languages : en
Pages : 234
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Book Description
Heat in most semiconductor materials, including the traditional group IV elements (Si, Ge, diamond), III–V compounds (GaAs, wide-bandgap GaN), and carbon allotropes (graphene, CNTs), as well as emerging new materials like transition metal dichalcogenides (TMDCs), is stored and transported by lattice vibrations (phonons). Phonon generation through interactions with electrons (in nanoelectronics, power, and nonequilibrium devices) and light (optoelectronics) is the central mechanism of heat dissipation in nanoelectronics. This book focuses on the area of thermal effects in nanostructures, including the generation, transport, and conversion of heat at the nanoscale level. Phonon transport, including thermal conductivity in nanostructured materials, as well as numerical simulation methods, such as phonon Monte Carlo, Green’s functions, and first principles methods, feature prominently in the book, which comprises four main themes: (i) phonon generation/heat dissipation, (i) nanoscale phonon transport, (iii) applications/devices (including thermoelectrics), and (iv) emerging materials (graphene/2D). The book also covers recent advances in nanophononics—the study of phonons at the nanoscale. Applications of nanophononics focus on thermoelectric (TE) and tandem TE/photovoltaic energy conversion. The applications are augmented by a chapter on heat dissipation and self-heating in nanoelectronic devices. The book concludes with a chapter on thermal transport in nanoscale graphene ribbons, covering recent advances in phonon transport in 2D materials. The book will be an excellent reference for researchers and graduate students of nanoelectronics, device engineering, nanoscale heat transfer, and thermoelectric energy conversion. The book could also be a basis for a graduate special topics course in the field of nanoscale heat and energy.
Author: Tibor Grasser
Publisher: Springer
ISBN: 3319089943
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Author: Joachim Piprek
Publisher: CRC Press
ISBN: 1498749577
Category : Science
Languages : en
Pages : 887
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Book Description
Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. Gives a broad overview of concepts with concise explanations illustrated by real results. Compares different levels of modeling, from simple analytical models to complex numerical models. Discusses practical methods of model validation. Includes an overview of numerical techniques.
Author: Danco Davcev
Publisher: Springer Science & Business Media
ISBN: 3642107818
Category : Technology & Engineering
Languages : en
Pages : 462
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Book Description
This book is the result of the first International Conference ICT Innovations 2009. The ICT Innovations conference is the primary scientific action of the Macedonian Society on Information and Communication Technologies (ICT-ACT). It promotes the publication of scientific results of the international community related to innovative fundamental and applied research in ICT. Today, ICT has enlarged its horizons and it is practiced under multidisciplinary contexts that introduce new challenges to theore- cal and technical approaches. The ICT Innovations 2009 conference gathered academics, professionals and pr- titioners reporting their valuable experiences in developing solutions and systems in the industrial and business arena especially innovative commercial implementations, novel applications of technology, and experience in applying recent research advances to practical situations, in any ICT areas. The conference focuses on issues concerning a variety of ICT fields like: • Multimedia Information Systems • Artificial Intelligence • Pervasive and Ubiquitous Computing • Eco and Bio Informatics • Internet and Web Applications and Services • Wireless and Mobile Communications and Services • Computer Networks, Security and Cryptography • Distributed Systems, GRID and Cloud Computing ICT Innovations 2009 Conference was held in Ohrid, Macedonia, in September 28-30, 2009. Local arrangements provided by the members of the Macedonian Society on Information and Communication Technologies – ICT-ACT, mainly consisting of teaching and research staff of Computer Science Department at Faculty of Electrical Engineering and Information Technologies and Institute of Informatics at Faculty of Natural Sciences, both at Ss. Cyril and Methodius University in Skopje, Macedonia.
Author: Dragica Vasileska
Publisher: CRC Press
ISBN: 1420064843
Category : Technology & Engineering
Languages : en
Pages : 782
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Book Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670220
Category : Science
Languages : en
Pages : 432
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Shunri Oda
Publisher: CRC Press
ISBN: 1482228688
Category : Technology & Engineering
Languages : en
Pages : 288
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Book Description
Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
