Modeling and Performance Evaluation of the Graphene Nanoribbon Field Effect Transistor PDF Download
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Author: Eunice Ng Hui Xian
Publisher:
ISBN:
Category : Graphene
Languages : en
Pages : 94
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Book Description
Author: Eunice Ng Hui Xian
Publisher:
ISBN:
Category : Graphene
Languages : en
Pages : 94
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Book Description
Author: Zaharah Johari
Publisher:
ISBN:
Category : Graphene
Languages : en
Pages : 152
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Book Description
Author: Adila Syaidatul Azman
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
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Book Description
Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 9811065500
Category : Technology & Engineering
Languages : en
Pages : 92
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Book Description
This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
Author: Yaser M. Banadaki
Publisher: CRC Press
ISBN: 0429666594
Category : Science
Languages : en
Pages : 210
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Book Description
Tremendous innovations in electronics and photonics over the past few decades have resulted in the downsizing of transistors in integrated circuits, which are now approaching atomic scales. This will soon result in the creation of a growing knowledge gap between the underlying technology and state-of-the-art electronic device modeling and simulations. This book bridges the gap by presenting cutting-edge research in the computational analysis and mathematical modeling of graphene nanostructures as well as the recent progress on graphene transistors for nanoscale circuits. It inspires and educates fellow circuit designers and students in the field of emerging low-power and high-performance circuit designs based on graphene. While most of the books focus on the synthesis, fabrication, and characterization of graphene, this book shines a light on graphene models and their circuit simulations and applications in photonics. It will serve as a textbook for graduate-level courses in nanoscale electronics and photonics design and appeal to anyone involved in electrical engineering, applied physics, materials science, or nanotechnology research.
Author: Meisam Rahmani
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 137
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Book Description
Author: Nurul Aida Izuani Che Rosid
Publisher:
ISBN:
Category :
Languages : en
Pages : 103
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Book Description
Author: Seyed Mahdi Mousavi
Publisher:
ISBN:
Category : Engineering mathematics
Languages : en
Pages : 0
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Book Description
Author: Raghu Murali
Publisher: Springer Science & Business Media
ISBN: 1461405483
Category : Technology & Engineering
Languages : en
Pages : 271
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Book Description
Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and the potential benefits of using graphene in a wide variety of electronic applications. The book also provides details on various methods to grow graphene, including epitaxial, CVD, and chemical methods. This book serves as a spring-board for anyone trying to start working on graphene. The book is also suitable to experts who wish to update themselves with the latest findings in the field.
Author: Amit Chaudhry
Publisher: Springer Science & Business Media
ISBN: 1461468221
Category : Technology & Engineering
Languages : en
Pages : 211
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Book Description
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
