Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure PDF Download
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Author: Jonathan W. Anderson
Publisher:
ISBN:
Category : Metal organic chemical vapor deposition
Languages : en
Pages : 130
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Book Description
The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices in recent years. The nitrides possess wide, direct transition band gaps ranging from 6.2 eV for AlN to 3.4 eV for GaN to 0.9 eV for InN which has allowed the development of LEDs and laser diodes in the blue and UV spectrum. Furthermore, the band gap, combined with a high electron saturation velocity and the piezoelectric properties of the (AlGaIn)N/GaN interface allow for the formation of a two-dimensional electron gas which can be utilized to produce high electron mobility transistors (HEMTs). In this thesis, the installation of a MOCVD reactor at Texas State University and the modifications necessary to make it operational will be presented. Furthermore, the progress made in developing of processes to deposit AlGaN/GaN heterostructures will also be discussed. Finally, evidence of phase separation by spinodal decomposition in a sample of high aluminum content AlGaInN, provided by IQE, from a study by scanning transmission electron microscopy in collaboration with the Yacaman group at the University of Texas as San Antonio will be presented, and the results discussed within the context of the regular solution model.
Author: Jonathan W. Anderson
Publisher:
ISBN:
Category : Metal organic chemical vapor deposition
Languages : en
Pages : 130
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Book Description
The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices in recent years. The nitrides possess wide, direct transition band gaps ranging from 6.2 eV for AlN to 3.4 eV for GaN to 0.9 eV for InN which has allowed the development of LEDs and laser diodes in the blue and UV spectrum. Furthermore, the band gap, combined with a high electron saturation velocity and the piezoelectric properties of the (AlGaIn)N/GaN interface allow for the formation of a two-dimensional electron gas which can be utilized to produce high electron mobility transistors (HEMTs). In this thesis, the installation of a MOCVD reactor at Texas State University and the modifications necessary to make it operational will be presented. Furthermore, the progress made in developing of processes to deposit AlGaN/GaN heterostructures will also be discussed. Finally, evidence of phase separation by spinodal decomposition in a sample of high aluminum content AlGaInN, provided by IQE, from a study by scanning transmission electron microscopy in collaboration with the Yacaman group at the University of Texas as San Antonio will be presented, and the results discussed within the context of the regular solution model.
Author:
Publisher:
ISBN:
Category : Naval research
Languages : en
Pages : 184
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Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 880
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Theodore M. Besmann
Publisher:
ISBN:
Category :
Languages : en
Pages : 422
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Book Description
Contents: Fundamentals/Modeling; Diagnostics; Process-Microstructure Relationships; Microstructure-Mechanical Property Relationships; Novel/Large-Scale Technologies; Metal-Organic Chemical Vapor Deposition. Keywords: Chemical vapor, Gas phase reactions, Thin alumina films, Tungsten films, Glass. (KR).
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 806
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Book Description
Author: Wengang (Wayne) Bi
Publisher: CRC Press
ISBN: 1498747140
Category : Science
Languages : en
Pages : 709
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Book Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Shengjun Zhou
Publisher: Springer Nature
ISBN: 9811904367
Category : Science
Languages : en
Pages : 244
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Book Description
This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
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Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 900
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Book Description
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
