Luminescence from Pure and Doped Cadmium Sulfide PDF Download
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Author: Noor N. K. Chowdhury
Publisher:
ISBN:
Category : Cadmium compounds
Languages : en
Pages : 84
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Author: Noor N. K. Chowdhury
Publisher:
ISBN:
Category : Cadmium compounds
Languages : en
Pages : 84
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Author: William Paul Bleha (Jr)
Publisher:
ISBN:
Category :
Languages : en
Pages : 159
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Green and blue photoluminescence has been observed below 100 degrees K in vacuum deposited, low resistivity CdS films given no post deposition treatment. The films were deposited in a heated chamber inside the bell jar on fused quartz substrates held at temperatures from 140-180 degrees C. The background pressure in the vacuum system was 0.000 001 Torr. The evaporant used was chlorine-doped CdS powder. The chlorine doping activated the luminescence and gave films that had resistivities at 300 degrees K in the range of from 1 to 100 ohm-cm parallel to the substrate. The green luminescence in the films at 77 degrees K was similar to the emission reported for donor-doped CdS. The green emission spectra observed at 10 degrees K became better resolved than at 77 degrees K, and the peak position shift with temperature was small. The blue emission peak observed in the films was at 4892 A at 77 degrees K, which is in the fundamental absorption edge. Some of the literature relating to the theory and practice of CdS vacuum deposition is reviewed. Also a summary of the properties of the green luminescence of pure and donor-doped CdS is given. (Author).
Author: Nick A. Komons
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 92
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Author: Alan G. Stanley
Publisher:
ISBN:
Category :
Languages : en
Pages : 660
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Author: Dexter George Girton
Publisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 270
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The technique of diffusion is shown to solve the major problems of producing rare earth doped CdS. In this method, an undoped CdS crystal, excess S (or Cd), and 5 mg of rare earth metal were sealed in a 3.6 cc. quartz ampoule at about 2 x 10 to the 5th power torr. Diffusions were performed with excess S for pressures ranging from 3.3 atm. to 33 atm. and temperatures ranging from 800C to 1050C, and with 6 atm. excess Cd at 960C. Diffusions were also performed with ZnSe crystals, excess Se, and 5 mg rare earth. The presence of rare earths in the diffused CdS (and ZnSe) samples was detected by observing the photoluminescent emission at 77K. The emission Pr, Nd, Ho, Er, Tm and Yb in CdS, and Ho, Er, Tm, and Yb in ZnSe has been observed and the spectra are shown. For given temperature, time, and chalcogen pressure the spectral characteristics were very reproducible from run to run, and the emission intensity for Nd, Er, and Yb in CdS was as high or higher than the best vapor phase doped crystals we have grown. A luminescent profile technique has been developed which measures the rare earth luminescent intensity as a function of depth from the surface of diffused samples. Photoluminescence measurements of Yb in CdS as a function of depth gave a profile which was neither a Gaussian nor complementary error function. Part of the profile appears to arise from a fast component of the diffusion and the other part from a slow diffusing component. (Author).
Author: M. Neuberger
Publisher:
ISBN:
Category : Cadmium
Languages : en
Pages : 176
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Author: Peter Franklin Moulton
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 510
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Author: Nick A. Komons
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 94
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Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
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Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Author: Karl Wolfgang Böer
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 20
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