Low Temperature Selective Epitaxy of In-situ Doped Silicon and Applications in Nanoscale CMOS PDF Download
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Author: Ibrahim Ban
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 618
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Book Description
Author: Ibrahim Ban
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 618
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Book Description
Author: Henry Radamson
Publisher: Academic Press
ISBN: 0124199968
Category : Technology & Engineering
Languages : en
Pages : 183
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Book Description
Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon photonics, including the reasons for its rapid expansion, its possibilities and limitations. It discusses the applications of these technologies for such applications as memory, digital logic operations, light sources, including drive electronics, optical modulators, detectors, and post detector circuitry. It will appeal to engineers in the fields of both electronics and photonics who need to learn more about the basics of the other field and the prospects for the integration of the two. Combines the topics of photonics and electronics in silicon and other group IV elements Describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon photonics
Author: Jing Liu
Publisher:
ISBN:
Category :
Languages : en
Pages : 154
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Book Description
Keywords: germanosilicide, silicide, silicon germanium, contact resistance, ultra-shallow junction, source drain, CMOS.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 820
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Book Description
Author: Shyam Gannavaram
Publisher:
ISBN:
Category : Metal oxide semiconductors, Complementary
Languages : en
Pages : 528
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Book Description
Author: Nemanja Pešović
Publisher:
ISBN:
Category :
Languages : en
Pages : 149
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Book Description
Keywords: selective, epitaxy, sige, source, drain, MOSFET, transistor.
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Conventional source/drain junction and contact formation processes can not meet the stringent requirements of future nanoscale complimentary metal oxide silicon (CMOS) technologies. The selective Si[subscript 1-x]Ge[subscript x] source/drain technology was proposed in this laboratory as an alternative to conventional junction and contact schemes. The technology is based on selective chemical vapor deposition of in-situ boron or phosphorus doped Si[subscript 1-x]Ge[subscript x] in source/drain areas. The fact that the dopant atoms occupy substitutional sites during growth make the high temperature activation anneals unnecessary virtually eliminating dopant diffusion to yield abrupt doping profiles. Furthermore, the smaller band gap of Si[subscript 1-xGe[subscript x] results in a smaller Schottky barrier height, which can translate into significant reductions in contact resistivity due to the exponential dependence of contact resistivity on barrier height. This study is focused on formation of self-aligned germanosilicide contacts to phosphorous-doped Si[subscript 1-x]Ge[subscript x] alloys. The experimental results obtained in this study indicate that self-aligned nickel germanosilicide (NiSi[subscript 1-x]Ge[subscript x]) contacts can be formed on Si[subscript 1-x]Ge[subscript x] layers at temperatures as low as 350 & deg;C. Contacts can yield a contact resistivity of 1E-8 ohm-cm2 with no sign of germanosilicide induced leakage. However, above a threshold temperature determined by the Ge concentration in the alloy, the NiSi[subscript 1-x]Ge[subscript x]/Si[subscript 1-x]Ge[subscript x] interface begins to roughen, which affects the junction leakage. For phosphorus doped layers considered in this study, the threshold temperature was around 500 & deg;C, which is roughly 100 & deg;C higher than the threshold temperature for NiSi[subscript 1-x]Ge[subscript x contacts formed on boron doped Si[subscript 1-x] Ge[subscript x] layers with a Ge percentage of ~ 50%. Nickel and.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
One of the key challenges for future CMOS technology nodes is to form source/drain junctions with very small parasitic series resistance values. This requires fundamentally new junction and contact formation technologies to produce ultra-shallow junctions with super-abrupt doping profiles, above equilibrium dopant activation and contact resistivity values near 10−8 ohm-cm2. Recently, this laboratory demonstrated a new junction formation technology based on selective deposition of heavily doped Si[subscript 1-x]Ge[subscript x] alloys in source/drain regions isotropically etched to the desired depth. The results to date indicate that the technology has the potential to meet all junction and contact requirements of future CMOS technology nodes. Of particular interest to this thesis is the smaller bandgap of Si[subscript 1-x]Ge[subscript x] resulting in a smaller metal-semiconductor barrier height, which is a key advantage in reducing the contact resistivity of a metal-semiconductor contact. In this work, formation of germanosilicide contacts to heavily boron doped Si[subscript 1-x]Ge[subscript x] alloys was studied with the intention to find a contact solution for future CMOS technology nodes beyond 100 nm. During the early stages of the research project, germanosilicides of Ti, Co, Ni, Pt, W, Ta, Mo and Zr were studied to identify the most promising candidates as source/drain contacts. The first set of experiments showed that Zr, Ni and Pt may have advantages over other candidates. Of the three germanosilicides, zirconium di-germanosilicide, Zr(Si[subscript 1-x]Ge[subscript x])2 exhibited the best thermal stability but suffered from a high resistivity and excessive substrate consumption. Ni and Pt germanosilicides were considered attractive because they were both mono-germanosilicides and consumed much less Si[subscript 1-x]Ge[subscript x] than Zr(Si[subscript 1-x]Ge[subscript x])2. Additionally, both had resistivity values lower than that.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
As metal-oxide semiconductor field effect transistors (MOSFETs) are scaled for higher speed and reduced power, new challenges are imposed on the source/drain junctions and their contacts. Future junction technologies are required to produce ultra-shallow junctions with junction depths as low as 4 nm, above-equilibrium dopant activation, super-abrupt doping profiles and specific contact resistivity values below 1x10− & 8312; &!cm2. Recently, selectively deposited, boron doped Si1−[subscript x]Ge[subscript x] junctions have been proposed to overcome these challenges. Success of technology relies on selective chemical vapor deposition of the process and satisfying stringent requirements for process integration. In the present work, the effects of process conditions on selective deposition of heavily boron doped Si1−[subscript x]Ge[subscript x] is investigated using Si2H6 and GeH4 as the precursors. It was found that addition of large amounts of diborane resulted in selectivity degradation. Addition of chlorine improved selectivity for both doped and undoped Si1−[subscript x]Ge[subscript x] depositions. It was shown that addition of chlorine to the undoped Si1−Ge[subscript x] deposition chemistry resulted in reduced surface roughness. It is proposed that chlorine preferentially segregates to the surface of the deposited films, and act as the surfactant. However, it was also found that addition of chlorine did not significantly impact the surface morphology of heavily boron doped Si1−Ge[subscript x]. It was shown that addition of chlorine strongly interfered with Ge and B incorporation. Furthermore, it was found that chlorine resulted in enhanced Ge but reduced B incorporation. It is proposed that chlorine adsorption on the growing surfaces reduced the available sites for boron while promoting SiCl2 desorption at lower temperatures. Increase in deposition temperature for a.
