Author: D.J. Lockwood
Publisher: Springer
ISBN: 1489936955
Category : Science
Languages : en
Pages : 592
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Book Description
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
Author: Elias Burstein
Publisher: Springer Science & Business Media
ISBN: 1461519632
Category : Science
Languages : en
Pages : 900
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Book Description
The optical properties of semiconductors have played an important role since the identification of semiconductors as "small" bandgap materials in the thinies, due both to their fundamental interest as a class of solids baving specific optical propenies and to their many important applications. On the former aspect we can cite the fundamental edge absorption and its assignment to direct or indirect transitions, many-body effects as revealed by exciton formation and photoconductivity. On the latter aspect, large-scale applications sucb as LEDs and lasers, photovoltaic converters, photodetectors, electro-optics and non-linear optic devices, come to mind. The eighties saw a revitalization of the whole field due to the advent of heterostructures of lower-dimensionality, mainly two-dimensional quantum wells, which through their enhanced photon-matter interaction yielded new devices with unsurpassed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamental physics.
Author: E M Anastassakis
Publisher: World Scientific
ISBN: 9814583634
Category :
Languages : en
Pages : 2768
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Book Description
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Author: David J Lockwood
Publisher: World Scientific
ISBN: 9814550159
Category :
Languages : en
Pages : 2858
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Book Description
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Author: Günter Weimann
Publisher: CRC Press
ISBN: 9780750302951
Category : Technology & Engineering
Languages : en
Pages : 880
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Book Description
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author: J.L. Beeby
Publisher: Springer Science & Business Media
ISBN: 1468413481
Category : Technology & Engineering
Languages : en
Pages : 811
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Book Description
The NATO Special Programme Panel on Condensed Systems of Low Dimensionality began its work in 1985 at a time of considerable activity in the field. The Panel has since funded many Advanced Research Workshops, Advanced Study Institutes, Cooperative Research Grants and Research Visits across the breadth of its remit, which stretches from self-organizing organic molecules to semiconductor structures having two, one and zero dimensions. The funded activities, especially the workshops, have allowed researchers from within NATO countries to exchange ideas and work together at a period of development of the field when such interactions are most valuable. Such timely support has undoubtedly assisted the development of national programs, particularly in the countries of the alliance wishing to strengthen their science base. A closing Workshop to mark the end of the Panel's activities was organized in Marmaris, Turkey from April 23-27, 1990, with the same title as the Panel: Condensed systems of Low Dimensionality. This volume contains papers presented at that meeting, which sought to bring together chemists, physicists and engineers from across the spectrum of the Panel's activities to discuss topics of current interest in their special fields and to exchange ideas about the effects of low dimensionality. As the following pages show, this is a topic of extraordinary interest and challenge which produces entirely new scientific phenomena, and at the same time offers the possibility of novel technological applications.
Author: Eougenious L. Ivchenko
Publisher: Springer Science & Business Media
ISBN: 3642606504
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
Superlattices and Other Heterostructures deals with optical properties of superlattices and quantum-well structures with emphasis on phenomena governed by crystal symmetries. After a brief introduction to group theory and symmetries, methods to calculate spectra of electrons, excitions and phonons in heterostructures are discussed. Further chapters cover absorption and reflection of light under interband transitions, cyclotron and electron spin-resoncance, light scattering by free and bound carriers as well as by optical and acoustic phonons, polarized photoluminescence, optical spin orientation of electrons and excitions, and nonlinear optical and photogalvanic effects.
Author: Paul H. Holloway
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937
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Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Author: P. Misaelides
Publisher: Springer Science & Business Media
ISBN: 9401584591
Category : Technology & Engineering
Languages : en
Pages : 668
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Book Description
The development of advanced materials with preselected properties is one of the main goals of materials research. Of especial interest are electronics, high-temperature and supemard materials for various applications, as well as alloys with improved wear, corrosion and mechanical resistance properties. The technical challenge connected with the production of these materials is not only associated with the development of new specialised preparation techniques but also with quality control. The energetic charged particle, electron and photon beams offer the possibility of modifying the properties of the near-surface regions of materials without seriously affecting their bulk, and provide unique analytical tools for testing their qUality. This volume includes most of the lectures and contributions delivered at the NATO-funded Advanced Study Institute "Application of Particle and Laser Beams in Materials Technology", which was held in Kallithea, Chalkidiki, in Northern Greece, from the 8th to the 21st of May, 1994 and attended by 73 participants from 21 countries. The aim of this ASI was to provide to the participants an overview of this rapidly expanding field. Fundamental aspects concerning the interactions and collisions on atomic, nuclear and solid state scale were presented in a didactic way, along with the application of a variety of techniques for the solution of problems ranging from the development of electronics materials to corrosion research and from archaeometry to environmental protection.
Author: J.M. Chamberlain
Publisher: Springer Science & Business Media
ISBN: 146847412X
Category : Science
Languages : en
Pages : 477
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Book Description
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
