Author: Arthur J. Freeman
Publisher:
ISBN:
Category : Actinide elements
Languages : en
Pages : 524

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Book Description

Author: Daniel Khomskii
Publisher: Cambridge University Press
ISBN: 1107020174
Category : Science
Languages : en
Pages : 501

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Book Description
This book describes all aspects of the physics of transition metal compounds, providing a comprehensive overview of this diverse class of solids. Set within a modern conceptual framework, this is an invaluable, up-to-date resource for graduate students, researchers and industrial practitioners in solid-state physics and chemistry, materials science, and inorganic chemistry.

Author: Likun Pan
Publisher: BoD – Books on Demand
ISBN: 9535122452
Category : Technology & Engineering
Languages : en
Pages : 652

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Book Description
The book summarizes the current state of the know-how in the field of perovskite materials: synthesis, characterization, properties, and applications. Most chapters include a review on the actual knowledge and cutting-edge research results. Thus, this book is an essential source of reference for scientists with research fields in energy, physics, chemistry and materials. It is also a suitable reading material for graduate students.

Author:
Publisher: Elsevier
ISBN: 0080540473
Category : Science
Languages : en
Pages : 805

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Book Description
The field of relativistic electronic structure theory is generally not part of theoretical chemistry education, and is therefore not covered in most quantum chemistry textbooks. This is due to the fact that only in the last two decades have we learned about the importance of relativistic effects in the chemistry of heavy and superheavy elements. Developments in computer hardware together with sophisticated computer algorithms make it now possible to perform four-component relativistic calculations for larger molecules. Two-component and scalar all-electron relativistic schemes are also becoming part of standard ab-initio and density functional program packages for molecules and the solid state. The second volume of this two-part book series is therefore devoted to applications in this area of quantum chemistry and physics of atoms, molecules and the solid state. Part 1 was devoted to fundamental aspects of relativistic electronic structure theory whereas Part 2 covers more of the applications side. This volume opens with a section on the Chemistry of the Superheavy Elements and contains chapters dealing with Accurate Relativistic Fock-Space Calculations for Many-Electron Atoms, Accurate Relativistic Calculations Including QED, Parity-Violation Effects in Molecules, Accurate Determination of Electric Field Gradients for Heavy Atoms and Molecules, Two-Component Relativistic Effective Core Potential Calculations for Molecules, Relativistic Ab-Initio Model Potential Calculations for Molecules and Embedded Clusters, Relativistic Pseudopotential Calculations for Electronic Excited States, Relativistic Effects on NMR Chemical Shifts, Relativistic Density Functional Calculations on Small Molecules, Quantum Chemistry with the Douglas-Kroll-Hess Approach to Relativistic Density Functional Theory, and Relativistic Solid State Calculations.- Comprehensive publication which focuses on new developments in relativistic quantum electronic structure theory- Many leaders from the field of theoretical chemistry have contributed to the TCC series- Will no doubt become a standard text for scientists in this field.

Author: Gang Cao
Publisher: World Scientific
ISBN: 9814374865
Category : Science
Languages : en
Pages : 328

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Book Description
This book is aimed at advanced undergraduates, graduate students and other researchers who possess an introductory background in materials physics and/or chemistry, and an interest in the physical and chemical properties of novel materials, especially transition metal oxides.New materials often exhibit novel phenomena of great fundamental and technological importance. Contributing authors review the structural, physical and chemical properties of notable 4d- and 5d-transition metal oxides discovered over the last 10 years. These materials exhibit extraordinary physical properties that differ significantly from those of the heavily studied 3d-transition metal oxides, mainly due to the relatively strong influence of the spin-orbit interaction and orbital order in 4d- and 5d materials. The immense growth in publications addressing the physical properties of these novel materials underlines the need to document recent advances and the current state of this field. This book includes overviews of the current experimental situation concerning these materials.

Author: Alexander V. Kolobov
Publisher: Springer
ISBN: 3319314505
Category : Technology & Engineering
Languages : en
Pages : 545

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Book Description
This book summarizes the current status of theoretical and experimental progress in 2 dimensional graphene-like monolayers and few-layers of transition metal dichalcogenides (TMDCs). Semiconducting monolayer TMDCs, due to the presence of a direct gap, significantly extend the potential of low-dimensional nanomaterials for applications in nanoelectronics and nano-optoelectronics as well as flexible nano-electronics with unprecedented possibilities to control the gap by external stimuli. Strong quantum confinement results in extremely high exciton binding energies which forms an interesting platform for both fundamental studies and device applications. Breaking of spatial inversion symmetry in monolayers results in strong spin-valley coupling potentially leading to their use in valleytronics. Starting with the basic chemistry of transition metals, the reader is introduced to the rich field of transition metal dichalcogenides. After a chapter on three dimensional crystals and a description of top-down and bottom-up fabrication methods of few-layer and single layer structures, the fascinating world of two-dimensional TMDCs structures is presented with their unique atomic, electronic, and magnetic properties. The book covers in detail particular features associated with decreased dimensionality such as stability and phase-transitions in monolayers, the appearance of a direct gap, large binding energy of 2D excitons and trions and their dynamics, Raman scattering associated with decreased dimensionality, extraordinarily strong light-matter interaction, layer-dependent photoluminescence properties, new physics associated with the destruction of the spatial inversion symmetry of the bulk phase, spin-orbit and spin-valley couplings. The book concludes with chapters on engineered heterostructures and device applications such as a monolayer MoS2 transistor. Considering the explosive interest in physics and applications of two-dimensional materials, this book is a valuable source of information for material scientists and engineers working in the field as well as for the graduate students majoring in materials science.

Author: Florian Gebhard
Publisher: Springer Science & Business Media
ISBN: 3540614818
Category : Technology & Engineering
Languages : en
Pages : 337

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Book Description
Little do we reliably know about the Mott transition, and we are far from a complete understanding of the metal --insulator transition due to electr- electron interactions. Mott summarized his basic ideas on the subject in his wonderful book Metal--Insulator nansitions that first appeared in 1974 11. 1). In his view, a Motk insulator displays a gap for charge-carrying excitations due to electron cowelations, whose importance is expressed by the presence of local magnetic moments regardless of whether or not they are ordered. Since the subject is far from being settled, different opinions on specific aspects of the Mott transition still persist. This book naturally embodies my own understanding of the phenomenon, inspired by the work of the late Sir Kevill Mott. The purpose of this book is twofold: first, to give a detailed presen- tion of the basic theoretical concopts for Mott insulators and, second, to test these ideas against the results from model calculations. For this purpose the Hubbard model and some of its derivatives are best suited. The Hubbard model describes a Mott transition with a mere minimum of tunable par- eters, and various exact statements and even exact solutions exist in certain limiting cases. Exact solutions not only allow us to test our basic ideas, but also help to assess the quality of approxin~ate theories for correlated electron systems.

Author: Eva Pavarini
Publisher: Forschungszentrum Jülich
ISBN: 9783893367962
Category :
Languages : en
Pages : 450

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Book Description

Author: Asim K. Ray
Publisher: John Wiley & Sons
ISBN: 1119529476
Category : Technology & Engineering
Languages : en
Pages : 628

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Book Description
Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.

Author: Joseph Woicik
Publisher: Springer
ISBN: 3319240439
Category : Science
Languages : en
Pages : 576

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Book Description
This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.