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Author: Qi Fan
Publisher:
ISBN:
Category :
Languages : en
Pages : 264
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Book Description
Author: Qi Fan
Publisher:
ISBN:
Category :
Languages : en
Pages : 264
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Book Description
Author:
Publisher: Woodhead Publishing
ISBN: 1782424687
Category : Science
Languages : en
Pages : 551
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Book Description
Photodetectors: Materials, Devices and Applications discusses the devices that convert light to electrical signals, key components in communication, computation, and imaging systems. In recent years, there has been significant improvement in photodetector performance, and this important book reviews some of the key advances in the field. Part one covers materials, detector types, and devices, and includes discussion of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, low-temperature grown gallium arsenide, plasmonic, Si photomultiplier tubes, and organic photodetectors, while part two focuses on important applications of photodetectors, including microwave photonics, communications, high-speed single photon detection, THz detection, resonant cavity enhanced photodetection, photo-capacitors and imaging. Reviews materials, detector types and devices Addresses fabrication techniques, and the advantages and limitations and different types of photodetector Considers a range of application for this important technology Includes discussions of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, and more
Author: Augusto L. Gutierrez-Aitken
Publisher:
ISBN:
Category :
Languages : en
Pages : 348
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Author: Hari Singh Nalwa
Publisher: Elsevier
ISBN: 032313789X
Category : Science
Languages : en
Pages : 575
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Book Description
Photodetectors and Fiber Optics is an outgrowth of the recently published 10-volume set Handbook of Advanced Electronic and Photonic Materials and Devices. The objective of this book is to present a highly coherent coverage of photodetectors and optical fibers. This book overs a broad spectrum of photodetectors, including types of materials, their fabrication, physical properties, and industrial applications. Many industries around the world are engaged in developing fiber optics technology for the new millennium. The applications of photodetectors in fiber optics and the role of optical fibers in present communication technology are extensively discussed. - Covers a broad spectrum of the photodetectors - Include types of materials, their fabrication, physical properties and industrial applications - Applications of photodetectors in fiber optics - Role of optical fibers in present communication technology - A very special topic presented in a timely manner and in a format
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 780
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Author:
Publisher:
ISBN:
Category : Electrooptical devices
Languages : en
Pages : 700
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
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Investigating the behavior of compensation implants in In-based compounds (InGaAs, InP, and InAlAs that are used in 1.2-1.6 micrometers fibre-optic communications) and their use in the fabrication of photodetectors. Approach: We have performed Fe and Co implants in n-type and Ti implants in p-type InGaAs, InAlAs and InP. Selective area high resistance regions are required in multilayer device structures (like heterojunction laser, heterojunction bipolar transistors photodetectors, etc.) that employ these three materials. Such a study is necessary with a growing interest in integrating microwave and optoelectronic devices based on these three compounds in monolithic form. The above mentioned transition metal implants were performed at both room and elevated (200 deg C) temperatures. The implants were done in both keV and MeV ranges. To obtain thick high resistance layers we have also employed multiple energy implantations. The implanted material was annealed using a halogen lamp rapid thermal annealing station. To protect the surface during annealing, a 50 nm thick Si3N4 cap was used. The SIMS measurements were performed in the as-implanted and the annealed material to monitor the implant atom density depth profiles. Conventional two-probe I-V measurements were performed after depositing and alloying the Au-Ge/Au or Au-Zn/Au ohmic contacts on the n- and p-type materials, respectively. Polaron electrochemical C-V depth profiling measurements were done to get carrier concentration depth profiles in MeV energy Fe or Ti implanted InP. The RBS measurements were performed to evaluate the lattice quality of the as-implanted and annealed material.
Author: Pit Ho Patrio Chiu
Publisher:
ISBN:
Category :
Languages : en
Pages : 200
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"InGaAs/InP PIN photodetectors have been fabricated in the laboratory. Several material characterization techniques are performed to characterize the material. They include current-voltage (I-V) measurements, capacitance-voltage (C-V) measurements, electron beam induce current (EBIC) measurements and deep level transient spectroscopy (DLTS) measurements. It is found that sample V1 and V1B have a higher n- region doping concentration then that of sample V2A. The measurements also indicate that the recombination currents in the devices are small. Depletion width of one of the photodetector in sample V1B is measured and has a value of 0.798 um under zero bias. Using EBIC measurement technique, the maximum electric field within the device is determined and has a value of 12.53 kV/cm under zero bias. It is found that there are minimum measurable majority deep states in the n - intrinsic region of the photodetectors using DLTS measurement technique while deep states are found in the InP buffer layer. They have an energy level of 0.34 eV below the conduction band." --
Author: Pheng-Piao Liao
Publisher:
ISBN:
Category :
Languages : en
Pages : 286
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Book Description
Author: Osamu Wada
Publisher: Springer Science & Business Media
ISBN: 1461526868
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
As we approach the end of the present century, the elementary particles of light (photons) are seen to be competing increasingly with the elementary particles of charge (electrons/holes) in the task of transmitting and processing the insatiable amounts of infonnation needed by society. The massive enhancements in electronic signal processing that have taken place since the discovery of the transistor, elegantly demonstrate how we have learned to make use of the strong interactions that exist between assemblages of electrons and holes, disposed in suitably designed geometries, and replicated on an increasingly fine scale. On the other hand, photons interact extremely weakly amongst themselves and all-photonic active circuit elements, where photons control photons, are presently very difficult to realise, particularly in small volumes. Fortunately rapid developments in the design and understanding of semiconductor injection lasers coupled with newly recognized quantum phenomena, that arise when device dimensions become comparable with electronic wavelengths, have clearly demonstrated how efficient and fast the interaction between electrons and photons can be. This latter situation has therefore provided a strong incentive to devise and study monolithic integrated circuits which involve both electrons and photons in their operation. As chapter I notes, it is barely fifteen years ago since the first demonstration of simple optoelectronic integrated circuits were realised using m-V compound semiconductors; these combined either a laser/driver or photodetector/preamplifier combination.
