Author: M O Manasreh
Publisher: CRC Press
ISBN: 9789056992644
Category : Technology & Engineering
Languages : en
Pages : 870
Book Description
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
InP and Related Compounds
Author: M O Manasreh
Publisher: CRC Press
ISBN: 9789056992644
Category : Technology & Engineering
Languages : en
Pages : 870
Book Description
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Publisher: CRC Press
ISBN: 9789056992644
Category : Technology & Engineering
Languages : en
Pages : 870
Book Description
InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
Author: Ikegami
Publisher: CRC Press
ISBN: 9780750302500
Category : Technology & Engineering
Languages : en
Pages : 1002
Book Description
Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Publisher: CRC Press
ISBN: 9780750302500
Category : Technology & Engineering
Languages : en
Pages : 1002
Book Description
Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Gallium Arsenide and Related Compounds
Author:
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 672
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 672
Book Description
Physical Properties of III-V Semiconductor Compounds
Author: Sadao Adachi
Publisher: John Wiley & Sons
ISBN: 9780471573296
Category : Science
Languages : en
Pages : 342
Book Description
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Publisher: John Wiley & Sons
ISBN: 9780471573296
Category : Science
Languages : en
Pages : 342
Book Description
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Author: Gerald B. Stringfellow
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Publisher: CRC Press
ISBN: 100011225X
Category : Science
Languages : en
Pages : 680
Book Description
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1607685434
Category :
Languages : en
Pages : 1042
Book Description
Publisher: The Electrochemical Society
ISBN: 1607685434
Category :
Languages : en
Pages : 1042
Book Description
SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices
Author: D. Harame
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Publisher: The Electrochemical Society
ISBN: 1566778255
Category : Science
Languages : en
Pages : 1066
Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
International Conference on Indium Phosphide and Related Materials
Author:
Publisher:
ISBN:
Category : Electrooptical devices
Languages : en
Pages : 752
Book Description
Publisher:
ISBN:
Category : Electrooptical devices
Languages : en
Pages : 752
Book Description
Two-Dimensional Systems, Heterostructures, and Superlattices
Author: G. Bauer
Publisher: Springer Science & Business Media
ISBN: 3642823114
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
This volume contains the proceedings of the International Winter School on "Heterostructures and Two-Dimensional Electronic Systems in Semiconductors". The school took place in Mauterndorf, Austria, from February 26 - March 2, 1984, and was the third one in a series of winter schools on "New Develop ments in Solid-State Physics", organized by the Austrian Physical Society, Solid State Physics Division. The school was attended by about 150 scientists from 12 countries, including the United States of America, Japan and Poland. Most of the research groups of Western Europe working in this field participated and demonstrated the still increasing interest in the topics. These topics cover the wide area ranging from fundamental phenomena in solid-state physics, like the quantum Hall effect, to new semiconductor devices, all based on two-dimensional elec tronic systems. We hope that the spirit of this school, the combination of basic and applied physics (including skiing) will stimulate further progress in this field of research. This conference was sponsored by the Austrian Physical Society, Austrian Federal Ministry for Science and Research, European Research Office of the US Army, European Office of Aerospace Research and Development, Federal Province of Salzburg, and Osterreichische Forschungsgemeinschaft Further financial support came from the following companies: Balzers, IBM Austria, Messer-Griesheim, Oxford Instruments, Klaus Schafer & Co., Siemens Osterreich and Varian.
Publisher: Springer Science & Business Media
ISBN: 3642823114
Category : Technology & Engineering
Languages : en
Pages : 300
Book Description
This volume contains the proceedings of the International Winter School on "Heterostructures and Two-Dimensional Electronic Systems in Semiconductors". The school took place in Mauterndorf, Austria, from February 26 - March 2, 1984, and was the third one in a series of winter schools on "New Develop ments in Solid-State Physics", organized by the Austrian Physical Society, Solid State Physics Division. The school was attended by about 150 scientists from 12 countries, including the United States of America, Japan and Poland. Most of the research groups of Western Europe working in this field participated and demonstrated the still increasing interest in the topics. These topics cover the wide area ranging from fundamental phenomena in solid-state physics, like the quantum Hall effect, to new semiconductor devices, all based on two-dimensional elec tronic systems. We hope that the spirit of this school, the combination of basic and applied physics (including skiing) will stimulate further progress in this field of research. This conference was sponsored by the Austrian Physical Society, Austrian Federal Ministry for Science and Research, European Research Office of the US Army, European Office of Aerospace Research and Development, Federal Province of Salzburg, and Osterreichische Forschungsgemeinschaft Further financial support came from the following companies: Balzers, IBM Austria, Messer-Griesheim, Oxford Instruments, Klaus Schafer & Co., Siemens Osterreich and Varian.
Physics and Chemistry of III-V Compound Semiconductor Interfaces
Author: Carl Wilmsen
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.