In Situ Spectroscopic Ellipsometry for Real-time Monitoring of HgCdTe/CdTe/Si Growth by MBE PDF Download
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Author: Leo Anthony Almeida
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Author: Leo Anthony Almeida
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 157
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The primary goal of this contract develop a real-time monitoring capability for HgCdTe composition during MBE growth. This goal was realized by demonstrating a + or - 0.001 accuracy in the composition values determined by the Spectroscopic Ellipsometry (SE) in situ sensor, which was confirmed by exsitu FTIR measurements. Attaining this level of success required significant improvements in the ellipsometer system hardware and data analysis software, the creation of accurate optical constant libraries for the CdZnTe Substrate and HgCdTe film materials, and the development of a systematic methodology for acquiring and analyzing insitu SE data in the MBE growth environment. These improvements and developments are part of an extensive 'knowledge base' which evolved throughout this contract, and is encapsulated in this report. This knowledge base is not specific only to HgCdTe growth; it is also directly relevant to the insitu SE monitoring of any epitaxial semiconductor growth process. In addition to the HgCdTe composition monitoring capabilities, insitu SE was also found to be very useful in monitoring the temperature and the surface condition of the CdZnTe substrate before growth, surface roughening during the initiation of HgCdTe growth, and the surface morphology during ECR etching of HgCdTe films.
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Category :
Languages : en
Pages : 13
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We present recent progress on the use of an integrated real-time sensing and control system for monitoring and controlling substrate temperature, layer composition, and effusion cell flux during MBE growth of HgCdTe epilayers for advanced IR detectors. Substrate temperature is measured and controlled in real-time using absorption-edge spectroscopy (ABES). This allows the substrate temperature to be maintained at +/-1.5 deg C from the desired setpoint, even during actuation of effusion cell shutters which under conventional thermocouple-based control would produce a substantial (10-15 deg C) temperature change. In situ spectroscopic ellipsometry (SE) is used for monitoring HgCdTe layer composition in real-time. We describe the development of a comprehensive temperature- and composition-dependent SE dielectric function database which can be used for accurate and precise monitoring of Hg(1-x)Cd(x)Te layer composition over a wide range of x-values, from 0.2 to 0.42. The composition changes inferred from the real-time SE measurements obtained during growth of a two-layer structure are in excellent agreement with actual composition vs. depth profiles obtained using post-growth SIMS analysis. Likewise, the accuracy and precision of SE measurements conducted over multiple growth runs are shown to be suitable for robust SE-based composition control. Changes in gas-phase concentration of Cd atoms produced by a CdTe effusion cell are detected using an atomic absorption method (optical-absorption flux monitoring OFM). The OFM method allows changes in HgCdTe layer composition to be correlated directly with variations in Cd flux. The in situ optical sensors are linked using a custom software framework to provide the foundation for integrated, real-time monitoring and control of HgCdTe MBE growth of high performance IR detector structures over a wide range of compositions, layer thickness and substrate temperature.
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Category : Dissertation abstracts
Languages : en
Pages : 872
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Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Mikhail Daraselia
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Author:
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Category : Chemistry
Languages : en
Pages : 2668
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Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
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Category : Aeronautics
Languages : en
Pages : 1042
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Author:
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ISBN:
Category : Electronic journals
Languages : en
Pages : 2948
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