Imperfections and Active Centres in Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Imperfections and Active Centres in Semiconductors PDF full book. Access full book title Imperfections and Active Centres in Semiconductors by R. G. Rhodes. Download full books in PDF and EPUB format.
Author: R. G. Rhodes
Publisher: Elsevier
ISBN: 1483222810
Category : Science
Languages : en
Pages : 386
Get Book Here
Book Description
Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.
Author: R. G. Rhodes
Publisher: Elsevier
ISBN: 1483222810
Category : Science
Languages : en
Pages : 386
Get Book Here
Book Description
Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.
Author: L. Aleksandrov
Publisher: Elsevier
ISBN: 1483289877
Category : Science
Languages : en
Pages : 335
Get Book Here
Book Description
Written for physicists, chemists, and engineers specialising in crystal and film growth, semiconductor electronics, and various applications of thin films, this book reviews promising scientific and engineering trends in thin films and thin-films materials science. The first part discusses the physical characteristics of the processes occurring during the deposition and growth of films, the principal methods of obtaining semiconductor films and of reparing substrate surfaces on which crystalline films are grown, and the main applications of films. The second part contains data on epitaxial interfaces and on ways of reducing transition regions in films and film-type devices, on the processes of crystallization and recrystallization of amorphous films, and on thermodynamic conditions, mechanisms and kinetic parameters of accelerated crystallization.
Author: Gudrun Kissinger
Publisher: CRC Press
ISBN: 1466586648
Category : Science
Languages : en
Pages : 436
Get Book Here
Book Description
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Author: B. L. Sharma
Publisher: Elsevier
ISBN: 1483280861
Category : Technology & Engineering
Languages : en
Pages : 225
Get Book Here
Book Description
Semiconductor Heterojunctions investigates various aspects of semiconductor heterojunctions. Topics covered include the theory of heterojunctions and their energy band profiles, electrical and optoelectronic properties, and methods of preparation. A number of heterojunction devices are also considered, from photovoltaic converters to photodiodes, transistors, and injection lasers. Comprised of eight chapters, this volume begins with an overview of the theory of heterojunctions and a discussion on abrupt isotype and anisotype heterojunctions, along with graded heterojunctions. The reader is then introduced to the energy band profiles of isotype and anisotype heterojunctions, the practical aspects of their fabrication and characterization, and their electronic and optoelectronic properties. Some methods used in the preparation of heterojunctions are also described, including the chemical method, solution growth method, alloying method, and sputtering method. The remaining chapters focus on the characterization of the grown layers, examples of heterojunction devices, and experimental work on heterojunctions. This monograph is intended for research workers and graduate students.
Author: Howard R. Huff
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 1170
Get Book Here
Book Description
Author: H. J. Goldschmidt
Publisher: Elsevier
ISBN: 1483225739
Category : Technology & Engineering
Languages : en
Pages : 643
Get Book Here
Book Description
Interstitial Alloys covers the significant progress in the development and understanding of the principles and applications of interstitial alloys. Interstitial alloy refers to the existence of a pure metal lattice, which the metal-metal atom bond remains the dominant one, and the non-metal atoms are sufficiently small to be accommodated within the metal lattice without, or with only a limited degree of, distortion from metal-type symmetry. This book contains 10 chapters and begins with a brief introduction to the basic principles of interstitial alloys. The next two chapters describe the physical properties of these alloys, along with their behavior in solid solutions. The remaining chapters deal with a specific interstitial alloy, its structure, physico-chemical properties, preparation, and application. This work specifically considers carbide, nitride, boride, silicide, oxide, hydride, and mixed interstitial alloys. This book will be of value to chemists and physicists.
Author: Roberto Fornari
Publisher: Woodhead Publishing
ISBN: 008102097X
Category : Technology & Engineering
Languages : en
Pages : 596
Get Book Here
Book Description
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. - Presents the latest research and most comprehensive overview of both standard and novel semiconductors - Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues - Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Author: Sorab K. Ghandhi
Publisher: John Wiley & Sons
ISBN: 0471580058
Category : Technology & Engineering
Languages : en
Pages : 870
Get Book Here
Book Description
Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Author: R. G. Rhodes
Publisher:
ISBN: 9781483197784
Category : Crystallography
Languages : en
Pages : 0
Get Book Here
Book Description
Author: H. H. Wieder
Publisher: Elsevier
ISBN: 1483186423
Category : Science
Languages : en
Pages : 393
Get Book Here
Book Description
Intermetallic Semiconducting Films introduces the physics and technology of A??v compound films. This material is a type of a polycrystalline semiconductor that is used for galvanomagnetic device applications. Such material has a high electron mobility that is ideal for generators and magnetoresistors. The book discusses the available references on the preparation and identification of the material. An assessment of its device applications and other possible use is also enumerated. The book describes the structures and physical parts of different films. A section of the book covers the three temperature methods of preparing the film. Processes such as vacuum evaporation, flash evaporation, condensation, and coevaporation are explained. Liquid phase epitaxial growth is another method discussed in the book. A chapter of the book explains the electrical and galvanomagnetic properties of films. The text is intended for students doing experimental investigations on semiconducting films and for research scientists on the field of semiconductors.
