Author: Song-Moon Suh
Publisher:
ISBN:
Category :
Languages : en
Pages : 464
Book Description
Homogeneous Nucleation and Growth of Particles During Chemical Vapor Deposition of Silicon Oxide Films
Experimental Study of Particle Nucleation and Growth in Atmospheric Pressure Chemical Vapor Deposition of Silicon from Silane
Author: Shivan Bhargava
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 202
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 202
Book Description
Nucleation and Growth of Silicon Thin Film Microstructures by Localized Laser Chemical Vapor Deposition
Author: David Edward Kotecki
Publisher:
ISBN:
Category :
Languages : en
Pages : 452
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 452
Book Description
Fundamental Gas-phase and Surface Chemistry of Vapor-phase Deposition II and Process Control, Diagnostics and Modeling in Semiconductor Manufacturing IV
Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566773195
Category : Science
Languages : en
Pages : 526
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773195
Category : Science
Languages : en
Pages : 526
Book Description
Numerical Modeling of Particle Nucleation, Growth, and Transport During Atmospheric Pressure Chemical Vapor Deposition of Silicon from Silane
Author: Milind R. Mahajan
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 226
Book Description
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 226
Book Description
Thin Film Deposition Employing Supersonic Molecular Beams
Author: Todd William Schroeder
Publisher:
ISBN:
Category :
Languages : en
Pages : 660
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 660
Book Description
Principles of Vapor Deposition of Thin Films
Author: Professor K.S. K.S Sree Harsha
Publisher: Elsevier
ISBN: 0080480314
Category : Technology & Engineering
Languages : en
Pages : 1173
Book Description
The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. Principles of Vapor Deposition of Thin Films brings in to one place a diverse amount of scientific background that is considered essential to become knowledgeable in thin film depostition techniques. Its ultimate goal as a reference is to provide the foundation upon which thin film science and technological innovation are possible. * Offers detailed derivation of important formulae. * Thoroughly covers the basic principles of materials science that are important to any thin film preparation. * Careful attention to terminologies, concepts and definitions, as well as abundance of illustrations offer clear support for the text.
Publisher: Elsevier
ISBN: 0080480314
Category : Technology & Engineering
Languages : en
Pages : 1173
Book Description
The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. Principles of Vapor Deposition of Thin Films brings in to one place a diverse amount of scientific background that is considered essential to become knowledgeable in thin film depostition techniques. Its ultimate goal as a reference is to provide the foundation upon which thin film science and technological innovation are possible. * Offers detailed derivation of important formulae. * Thoroughly covers the basic principles of materials science that are important to any thin film preparation. * Careful attention to terminologies, concepts and definitions, as well as abundance of illustrations offer clear support for the text.
Dynamics of Nucleation in Chemical Vapor Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
Book Description
We study the evolution of layer morphology during the early stages of metal chemical vapor deposition (CVD) onto Si(100) via pyrolysis of Fe(CO)5 below 250°C. Scanning tunneling microscopy (STM) shows that nuclei formation is limited by precursor dissociation which occurs on terraces, not at step sites. Also, the average size of clusters formed during CVD is larger than for Fe growth by evaporation (a random deposition process). Based on STM data and Monte Carlo simulations, we conclude that the CVD-growth morphology is affected by preferential dissociation of Fe(CO)5 molecules at existing Fe clusters -- an autocatalytic effect. We demonstrate that nucleation kinetics can be used to control formation of metal nanostructures on chemically tailored surfaces. Reactive sites on Si (001) are first passivated by hydrogen. H atoms are locally removed by electron stimulated desorption using electrons emitted from the STM tip. Subsequent pyrolysis of Fe(CO)5 leads to selective nucleation and growth of Fe films in the areas where H has been removed.
Publisher:
ISBN:
Category :
Languages : en
Pages : 15
Book Description
We study the evolution of layer morphology during the early stages of metal chemical vapor deposition (CVD) onto Si(100) via pyrolysis of Fe(CO)5 below 250°C. Scanning tunneling microscopy (STM) shows that nuclei formation is limited by precursor dissociation which occurs on terraces, not at step sites. Also, the average size of clusters formed during CVD is larger than for Fe growth by evaporation (a random deposition process). Based on STM data and Monte Carlo simulations, we conclude that the CVD-growth morphology is affected by preferential dissociation of Fe(CO)5 molecules at existing Fe clusters -- an autocatalytic effect. We demonstrate that nucleation kinetics can be used to control formation of metal nanostructures on chemically tailored surfaces. Reactive sites on Si (001) are first passivated by hydrogen. H atoms are locally removed by electron stimulated desorption using electrons emitted from the STM tip. Subsequent pyrolysis of Fe(CO)5 leads to selective nucleation and growth of Fe films in the areas where H has been removed.
Handbook of Nanophase and Nanostructured Materials
Author: Z.L. Wang
Publisher: Springer Science & Business Media
ISBN: 030647249X
Category : Technology & Engineering
Languages : en
Pages : 1519
Book Description
These books, with of a total of 40 chapters, are a comprehensive and complete introductory text on the synthesis, characterization, and applications of nanomaterials. They are aimed at graduate students and researchers whose background is chemistry, physics, materials science, chemical engineering, electrical engineering, and biomedical science. The first part emphasizes the chemical and physical approaches used for synthesis of nanomaterials. The second part emphasizes the techniques used for characterizing the structure and properties of nanomaterials, aiming at describing the physical mechanism, data interpretation, and detailed applications of the techniques. The final part focuses on systems of different nanostructural materials with novel properties and applications.
Publisher: Springer Science & Business Media
ISBN: 030647249X
Category : Technology & Engineering
Languages : en
Pages : 1519
Book Description
These books, with of a total of 40 chapters, are a comprehensive and complete introductory text on the synthesis, characterization, and applications of nanomaterials. They are aimed at graduate students and researchers whose background is chemistry, physics, materials science, chemical engineering, electrical engineering, and biomedical science. The first part emphasizes the chemical and physical approaches used for synthesis of nanomaterials. The second part emphasizes the techniques used for characterizing the structure and properties of nanomaterials, aiming at describing the physical mechanism, data interpretation, and detailed applications of the techniques. The final part focuses on systems of different nanostructural materials with novel properties and applications.
A Study of Particle Formatio and Transport During Thermal Chemical Vapor Deposition (CVD) of Silicon Dioxide Films and High-density Plasma CVD of Poly Silicon Films
Author: Taesung Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 320
Book Description