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Author: Ali Afsahi
Publisher:
ISBN: 9781303625022
Category :
Languages : en
Pages : 98
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Book Description
The advancement of CMOS technology has enabled a high level of integration in modern, low cost, small form-factor and low power wireless devices. While power amplifiers (PAs) are key components in wireless transceivers, their realization and integration in standard CMOS technology has shown several challenges. The modern wireless standards such as WLAN and LTE, utilize higher order modulation schemes in order to increase the data rate and efficiently use the limited available spectrum and also provide a robust link in a fading environment. These modulations possess a very high peak-to-average ratio (PAR) and require a very linear power amplifier to preserve the integrity of the signal. In this dissertation several linearization and power combining techniques have been proposed to address the challenges of designing a high power and linear PA in CMOS for WLAN applications. To demonstrate these techniques in silicon, three chips have been designed and fabricated in 65nm standard CMOS. In the first chip, a fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are implemented. With a 3.3v supply, the PAs produce a saturated output power of 28.3dBm and 26.7dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4GHz and 5GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25dB is achieved at 22.4dBm for the 2.4GHz band and 20.5dBm for the 5GHz band while transmitting 54Mbs OFDM. In the next two designs, two monolithic power combining schemes for CMOS power amplifiers, distributed-LC and current-mode transformer-based, are compared. Fully integrated 2.4GHz power amplifiers (PAs) using these techniques were fabricated. From a 3.3 V supply, the distributed-LC combined PA produces a saturated power of 31.5dBm with peak PAE of 25%. The current-mode transformer based PA combiner produces 33.5dBm saturated power with 37.6% peak PAE. With gm-linearization and digital pre-distortion, these PAs transmit 25.5dBm and 26.4dBm with -25dB EVM for a 54Mb/s OFDM signal respectively.
Author: Ali Afsahi
Publisher:
ISBN: 9781303625022
Category :
Languages : en
Pages : 98
Get Book Here
Book Description
The advancement of CMOS technology has enabled a high level of integration in modern, low cost, small form-factor and low power wireless devices. While power amplifiers (PAs) are key components in wireless transceivers, their realization and integration in standard CMOS technology has shown several challenges. The modern wireless standards such as WLAN and LTE, utilize higher order modulation schemes in order to increase the data rate and efficiently use the limited available spectrum and also provide a robust link in a fading environment. These modulations possess a very high peak-to-average ratio (PAR) and require a very linear power amplifier to preserve the integrity of the signal. In this dissertation several linearization and power combining techniques have been proposed to address the challenges of designing a high power and linear PA in CMOS for WLAN applications. To demonstrate these techniques in silicon, three chips have been designed and fabricated in 65nm standard CMOS. In the first chip, a fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are implemented. With a 3.3v supply, the PAs produce a saturated output power of 28.3dBm and 26.7dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4GHz and 5GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25dB is achieved at 22.4dBm for the 2.4GHz band and 20.5dBm for the 5GHz band while transmitting 54Mbs OFDM. In the next two designs, two monolithic power combining schemes for CMOS power amplifiers, distributed-LC and current-mode transformer-based, are compared. Fully integrated 2.4GHz power amplifiers (PAs) using these techniques were fabricated. From a 3.3 V supply, the distributed-LC combined PA produces a saturated power of 31.5dBm with peak PAE of 25%. The current-mode transformer based PA combiner produces 33.5dBm saturated power with 37.6% peak PAE. With gm-linearization and digital pre-distortion, these PAs transmit 25.5dBm and 26.4dBm with -25dB EVM for a 54Mb/s OFDM signal respectively.
Author: Paulo Augusto Dal Fabbro
Publisher: Springer Science & Business Media
ISBN: 9048193613
Category : Technology & Engineering
Languages : en
Pages : 171
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Book Description
Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.
Author: Ham Hee Jeon
Publisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages :
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Book Description
The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology.
Author: Hector Solar Ruiz
Publisher: Springer Science & Business Media
ISBN: 1461486572
Category : Technology & Engineering
Languages : en
Pages : 191
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Book Description
The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.
Author: Mona M. Hella
Publisher: Springer Science & Business Media
ISBN: 0792376285
Category : Technology & Engineering
Languages : en
Pages : 107
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Book Description
RF CMOS Power Amplifiers: Theory Design and Implementation focuses on the design procedure and the testing issues of CMOS RF power amplifiers. This is the first monograph addressing RF CMOS power amplifier design for emerging wireless standards. The focus on power amplifiers for short is distance wireless personal and local area networks (PAN and LAN), however the design techniques are also applicable to emerging wide area networks (WAN) infrastructure using micro or pico cell networks. The book discusses CMOS power amplifier design principles and theory and describes the architectures and tardeoffs in designing linear and nonlinear power amplifiers. It then details design examples of RF CMOS power amplifiers for short distance wireless applications (e, g., Bluetooth, WLAN) including designs for multi-standard platforms. Design aspects of RF circuits in deep submicron CMOS are also discussed. RF CMOS Power Amplifiers: Theory Design and Implementation serves as a reference for RF IC design engineers and RD and R&D managers in industry, and for graduate students conducting research in wireless semiconductor IC design in general and with CMOS technology in particular.
Author: 黃冠傑
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Nourhan Elsayed
Publisher: Springer Nature
ISBN: 3030927466
Category : Technology & Engineering
Languages : en
Pages : 105
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Book Description
This book introduces power amplifier design in 22nm FDSOI CMOS dedicated towards 5G applications at 28 GHz and presents 4 state-of-the-art power amplifier designs. The authors discuss power amplifier performance metrics, design trade-offs, and presents different power amplifier classes utilizing efficiency enhancement techniques at 28 GHz. The book presents the design process from theory, simulation, layout, and finally measurement results.
Author: Shivaprasad T. J.
Publisher: LAP Lambert Academic Publishing
ISBN: 9783847322559
Category :
Languages : en
Pages : 72
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Book Description
The objective of this work is to design and implement a CMOS power amplifier for GSM Applications. Recent study shows that more analog blocks are being integrated onto single silicon CMOS Chip. The power amplifier becomes the final block in the transmit path and has to amplify the signal to required power level. Power amplifiers are extensively used in cell phones, base stations, cordless phones, WLAN etc. Class-C has become more useful where efficiency is a prime concern. A differential topology method is presented to design Power Amplifier (PA) for GSM applications. The differential topology suppresses the even higher harmonics at the output. The CMOS Class-C PA is suitable for applications which use constant-envelope modulation scheme where information is contained in phase e.g. BPSK and GMSK. This is an advantage for Class-C PA despite non-linearity of the output signal. The balun implemented in this design is not only used to link the differential PA to the single-ended load but also works as a output matching network. In this work the transistor size i.e. 'W/L Ratio', L and C values are set in order to maximize the Power Added Efficiency (PAE).
Author: Paulo Augusto Dal Fabbro
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
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Book Description
Author: Ockgoo Lee
Publisher:
ISBN:
Category : Amplifiers (Electronics)
Languages : en
Pages :
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Book Description
High-efficiency performance is one of the most important requirements of power : amplifiers (PAs) for wireless applications. However, the design of highly efficient CMOS.
