Growth of Beta Silicon Carbide in a Reduced Pressure Chemical Vapor Deposition System PDF Download
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Author: Gladys Felton
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
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Author: Gladys Felton
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
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Book Description
![The Growth and Characterization of Beta Silicon Carbide ([beta]-Sic) Thin Films by Chemical Vapor Deposition in a Low Pressure Vertical Reactor PDF](https://books.google.com/books/content/images/frontcover/GZ9RNwAACAAJ?fife=w80-h100)
Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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Author: Kenneth George Irvine
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
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Author: Angela Jones
Publisher:
ISBN:
Category :
Languages : en
Pages : 250
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Author: Hai-pyng Peter Liaw
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 462
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Author: Robert F. Davis
Publisher:
ISBN:
Category :
Languages : en
Pages : 33
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The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Author: Sajid Ishaq
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Ying Gao
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
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Author: Charles Edward Ryan
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ISBN:
Category : Chlorine compounds
Languages : en
Pages : 28
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The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
Author: Abebe Mesfin
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
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