Growth and Characterization of Silicon-based Dielectrics Using Plasma Enhanced Chemical Vapor Deposition PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Growth and Characterization of Silicon-based Dielectrics Using Plasma Enhanced Chemical Vapor Deposition PDF full book. Access full book title Growth and Characterization of Silicon-based Dielectrics Using Plasma Enhanced Chemical Vapor Deposition by Daniel J. Carbaugh. Download full books in PDF and EPUB format.
Author: Daniel J. Carbaugh
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages :
Get Book Here
Book Description
Author: Daniel J. Carbaugh
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages :
Get Book Here
Book Description
Author: Arjen Boogaard
Publisher:
ISBN: 9789036531306
Category :
Languages : en
Pages : 186
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Theoretical ab-initio calculations (including both the Configuration Interaction and Density Functional approaches) are used to describe some of the critical surface reactions during plasma enhanced chemical vapor deposition of amorphous and micro-crystalline silicon films. The energetics as well as the reaction mechanism are calculated for the abstraction of surface hydrogen by incident silyl and hydrogen radicals. Another important reaction involving the insertion of these radicals (silyl and hydrogen) into strained Si-Si bonds on the surface is also evaluated. Experiments involve surface topology evolution studies of plasma deposited a-Si:H films using atomic force microscopy (AFM) as well as structural and electrical characterization of silicon dioxide films using several techniques including infrared spectroscopy, ellipsometry, and current-voltage measurements. A predictive kinetic model to describe the growth of silicon films from a predominantly silyl radical flux is developed to explain experimental observations regarding the properties of plasma deposited amorphous silicon films. The model explains diffusion length enhancements under certain processing conditions as well as lays a foundation for understanding the Si-Si network formation during the deposition of a-Si films.
Author: Aditi Banerjee
Publisher:
ISBN:
Category :
Languages : en
Pages : 344
Get Book Here
Book Description
Author: Pio Capezzuto
Publisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Get Book Here
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Author: Linda Mason Garverick
Publisher:
ISBN:
Category :
Languages : en
Pages : 374
Get Book Here
Book Description
Author: David Vincent Tsu
Publisher:
ISBN:
Category :
Languages : en
Pages : 500
Get Book Here
Book Description
Author: Germain L. Fenger
Publisher:
ISBN:
Category : Thin film transistors
Languages : en
Pages : 178
Get Book Here
Book Description
"This study investigated a variety of electrically insulating materials for potential use as a gate dielectric in thin-film transistor applications. The materials that were investigated include silicon dioxide and oxynitride films deposited using PECVD and LPCVD techniques. Silicon source materials included tetraethylorthosilicate (TEOS) and silane (SiH4). Oxygen sources included diatomic oxygen (O2) and nitrous oxide (N2O). The optical, electrical, and material properties of the dielectrics were analyzed using Variable Angle Spectroscopic Ellipsometry (VASE), Fourier Transform Infrared Spectroscopy (FTIR), Capacitance-Voltage (C-V) analysis and current-voltage (I-V) analysis. Transistors were also fabricated at low temperatures with different gate dielectrics to investigate the impact on device performance. While a deposited gate dielectric is intrinsically inferior to a thermally grown SiO2 layer, an objective of this study was to create a high quality gate dielectric with low levels of bulk and interface charge (Qit & Qot~1x1010 cm2); this was achieved."--Abstract.
Author: Mark W. Rowe
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 192
Get Book Here
Book Description
Author: Giovanni Bruno
Publisher:
ISBN: 9780121379407
Category : Science
Languages : en
Pages : 324
Get Book Here
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
