Author: Christopher Alan Coronado
Publisher:
ISBN:
Category :
Languages : en
Pages : 18
Book Description
Gas Source Molecular Beam Epitaxy of ZnSe and ZnSe:N
Author: Christopher Alan Coronado
Publisher:
ISBN:
Category :
Languages : en
Pages : 18
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 18
Book Description
Gas Source Molecular Beam Epitaxy of ZnSe on (In, Ga)P
Author: Kan Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 20
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 20
Book Description
Gas Source Molecular Beam Epitaxy Growth of ZnSe on Novel Buffer Layers
Author: K. Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
Book Description
Growth and Characterization of ZnSe by Metalorganic and Gas Source Molecular Beam Epitaxy
Author: Christopher Alan Coronado
Publisher:
ISBN:
Category :
Languages : en
Pages : 324
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 324
Book Description
Gas Source Molecular Beam Epitaxy
Author: Morton B. Panish
Publisher: Springer Science & Business Media
ISBN: 3642781276
Category : Science
Languages : en
Pages : 441
Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Publisher: Springer Science & Business Media
ISBN: 3642781276
Category : Science
Languages : en
Pages : 441
Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Molecular Beam Epitaxial Growth of Homoepitaxial Zinc Selenide
Author: Minhyon Jeon
Publisher:
ISBN:
Category :
Languages : en
Pages : 422
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 422
Book Description
Molecular Beam Epitaxy
Author: Marian A. Herman
Publisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Publisher: Springer Science & Business Media
ISBN: 3642970982
Category : Technology & Engineering
Languages : en
Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Metalorganic Molecular Beam Epitaxy of ZnSe and Related Compounds
Author: Abdel-Rahman Abdel-Latif El-Emawy
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 402
Book Description
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 402
Book Description
Molecular Beam Epitaxy of ZnSe on GaAs Epilayers for Use in MIS Devices
Author: George David Studtmann
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 112
Book Description
Molecular Beam Epitaxy
Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.