Gas Source Molecular Beam Epitaxy of Lasers and Detectors Using Strained Layers of IN1-xGAxASyP1-y PDF Download
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Author: John Christopher Dries
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Author: John Christopher Dries
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
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Author: Alfred Cho
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 602
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Book Description
Market: Materials scientists and graduate students. This volume includes the most significant contributions of world- renowned scientists in the field of Molecular Beam Expitaxy (MBE). MBE is an extremely important technique for growing single crystals by making beams of atoms and molecules strike a crystalline substrate in a vacuum. This technique has found broad applications in modern materials science.
Author: Morton B. Panish
Publisher: Springer
ISBN: 9783642781292
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Author: Motokazu Ogawa
Publisher:
ISBN:
Category :
Languages : en
Pages : 260
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Author: John Bowers
Publisher:
ISBN:
Category :
Languages : en
Pages : 63
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Book Description
This report is divided into three Sections: the first covering the work done in the area of high speed InGaAs/GaAs strained quantum well lasers; the second in the material growth and laser fabrication in the InGaAs/AlInGaAs system; and the third in the Gas Source Molecular Beam Epitaxy (GSMBE) of In materials. This contract began at a time when quantum well laser bandwidths were severely limited for unknown reasons and the largest bandwidths were in bulk lasers. This has all changed now. Strained quantum well lasers were fabricated during the initial phase of this program resulting in anomalously large damping rates in quantum well lasers. Large damping rates result in small bandwidth because the lasers become critically damped at a low frequency. During the second portion of the contract, a theory describing the reasons for the resonance frequency, damping frequency, K factor, intensity noise, internal efficiency injection efficiency and wavelength chirping has been derived. Theoretical and experimental evidence in this program shows that carrier transport can lead to significant low frequency parasitic-like, rolloff that reduces the modulation response by as much as a factor of six in quantum well lasers. Semiconductor laser, Heterostructures, Quantum wells, Strained.
Author: Rajat Jhanjee
Publisher:
ISBN:
Category :
Languages : en
Pages : 114
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Author: Nerissa Sue Taylor
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
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Author: K. Lu
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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Author: Chin-An Chang
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Author: North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)
Publisher:
ISBN: 9781563968211
Category :
Languages : en
Pages : 264
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Book Description
