Fabrication and Characterization of Indium Arsenide Nanostructures

Fabrication and Characterization of Indium Arsenide Nanostructures PDF Author: Kai-An Cheng
Publisher:
ISBN:
Category : Indium arsenide
Languages : en
Pages : 190

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Fabrication and Characterization of Indium Arsenide Nanostructures

Fabrication and Characterization of Indium Arsenide Nanostructures PDF Author: Kai-An Cheng
Publisher:
ISBN:
Category : Indium arsenide
Languages : en
Pages : 190

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Design, Fabrication, and Characterization of Indium Arsenide

Design, Fabrication, and Characterization of Indium Arsenide PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors PDF Author: Mengqi Fu
Publisher: Springer
ISBN: 9811334447
Category : Science
Languages : en
Pages : 113

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This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Indium Arsenide Nanowires

Indium Arsenide Nanowires PDF Author: Morten Hannibal Madsen
Publisher:
ISBN:
Category :
Languages : en
Pages : 120

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The Design, Fabrication, and Characterization of High-performance Self-aligned Gallium Arsenide/aluminum Gallium Arsenide and Gallium Arsenide/gallium Indium Arsenide/aluminum Gallium Arsenide Heterojunction Bipolar Transistors

The Design, Fabrication, and Characterization of High-performance Self-aligned Gallium Arsenide/aluminum Gallium Arsenide and Gallium Arsenide/gallium Indium Arsenide/aluminum Gallium Arsenide Heterojunction Bipolar Transistors PDF Author: Dean Winston Barker
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 474

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Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide/gallium Arsenide and Indium Aluminum Arsenide/indium Gallium Arsenide Heterojunction Bipolar Transistors

Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide/gallium Arsenide and Indium Aluminum Arsenide/indium Gallium Arsenide Heterojunction Bipolar Transistors PDF Author: Saied Tadayon
Publisher:
ISBN:
Category :
Languages : en
Pages : 466

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Fabrication and Characterization of One-dimensional Functional Nanostructures

Fabrication and Characterization of One-dimensional Functional Nanostructures PDF Author: Chunglin Tsai
Publisher:
ISBN:
Category : Nanostructured materials
Languages : en
Pages : 314

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Fabrication and Characterization of Metal Oxide Nanostructures

Fabrication and Characterization of Metal Oxide Nanostructures PDF Author: Dan Li
Publisher: Open Dissertation Press
ISBN: 9781374667488
Category :
Languages : en
Pages :

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This dissertation, "Fabrication and Characterization of Metal Oxide Nanostructures" by Dan, Li, 李丹, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled FABRICATION AND CHARACTERIZATION OF METAL OXIDE NANOSTRUCTURES Submitted by Li Dan for the degree of Doctor of Philosophy at The University of Hong Kong in July 2007 Among various nanostructured materials, metal oxides are very promising for a variety of practical applications. Among different possible synthesis methods for metal oxide nanostructures, hydrothermal synthesis is of great interest because it is safe and environmentally friendly, and is typically performed at temperatures of less than 200 C. In this dissertation, several metal oxide nanostructures, including zinc oxide (ZnO), copper oxide (CuO) and nickel oxide (NiO) nanostructures, were fabricated by hydrothermal synthesis from aqueous solutions of zinc/copper/nickel nitrate hydrate and hexamethylenetetramine. The morphological, structural, optical and electrochemical properties of resultant nanostructures were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), energy dispersive X-ray spectroscopy (EDX), photoluminescence (PL), and electron paramagnetic resonance spectroscopy (EPR). The obtained ZnO nanorods are straight and perpendicular to the substrate. The substrate conditions have considerable effects on the size and the orientation of the nanorods. The pH value of solutions also has significant influence on the morphology of resultant ZnO nanostructures. The PL spectra of the ZnO nanorods exhibit one UV peak and one yellow peak ( 578 nm). The ZnO nanorods also show very strong EPR signal at g 1.96. For different synthesis conditions, spherical assemblies of CuO platelets and CuO nanostructured films were obtained respectively. The solution concentration, pH value, synthesis temperature, and presence of seeds significantly affect obtained morphology as well as adhesion to the substrate. For different synthesis conditions, NiO nanowalls and NiO nanostructured films were obtained respectively. The influence of pH value is different on different NiO nanostructures. Finally, transition metal (Mn, Cr, and Co) doped ZnO nanostructures were synthesized by a hydrothermal method from aqueous solutions of zinc nitrate hydrate, TM (TM = Mn, Cr, Co) nitrate hydrate, and hexamethylenetetramine. The addition of TM nitrate hydrate resulted in the change of the shape and preferential orientation of ZnO nanorods. Also, the addition of the dopant affects the optical properties, including the ratio of UV to defect emission and the position of the UV emission peak. DOI: 10.5353/th_b3877735 Subjects: Nanostructures Metallic oxides

Epitaxial Growth and Characterization of Indium Phosphide and Gallium Indium Arsenide by Metalorganic Chemical Vapor Deposition

Epitaxial Growth and Characterization of Indium Phosphide and Gallium Indium Arsenide by Metalorganic Chemical Vapor Deposition PDF Author: Kam Tai Chan
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 450

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Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 924

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