Evaluation of Advanced Semiconductor Materials by Electron Microscopy PDF Download
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Author: David Cherns
Publisher:
ISBN: 9781461305286
Category :
Languages : en
Pages : 430
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Book Description
Author: David Cherns
Publisher:
ISBN: 9781461305286
Category :
Languages : en
Pages : 430
Get Book
Book Description
Author: David Cherns
Publisher: Springer Science & Business Media
ISBN: 1461305276
Category : Medical
Languages : en
Pages : 413
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Book Description
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
Author: Clive Hayzelden
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 296
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Book Description
The first symposium on electron microscopy and materials for ultra-large scale integration (ULSI) at the Society's meeting attracted 34 papers by contributors from Asia, North America, and Europe. They cover specimen preparation and defect analysis in semiconductor devices; metallization, silicides, and diffusion barriers; the advanced characterization of ULSI structures, and semiconductor epitaxy and heterostructures. Annotation copyrighted by Book News, Inc., Portland, OR
Author: J. Zemel
Publisher: Springer Science & Business Media
ISBN: 1475713525
Category : Technology & Engineering
Languages : en
Pages : 791
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Book Description
From September 19-29, a NATO Advanced Study Institute on Non destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub stantial immediate concern to the device technologies and end users.
Author: David Vernon Sulway
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: Peter W. Hawkes
Publisher: Academic Press
ISBN: 0080525474
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.
Author: Michael W. Fay
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 1402086156
Category : Technology & Engineering
Languages : en
Pages : 504
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Book Description
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author: R.F. Egerton
Publisher: Springer Science & Business Media
ISBN: 0387260161
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Scanning and stationary-beam electron microscopes are indispensable tools for both research and routine evaluation in materials science, the semiconductor industry, nanotechnology and the biological, forensic, and medical sciences. This book introduces current theory and practice of electron microscopy, primarily for undergraduates who need to understand how the principles of physics apply in an area of technology that has contributed greatly to our understanding of life processes and "inner space." Physical Principles of Electron Microscopy will appeal to technologists who use electron microscopes and to graduate students, university teachers and researchers who need a concise reference on the basic principles of microscopy.
Author: Peter J. Goodhew
Publisher: CRC Press
ISBN: 1482289342
Category : Technology & Engineering
Languages : en
Pages : 264
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Book Description
Electron Microscopy and Analysis deals with several sophisticated techniques for magnifying images of very small objects by large amounts - especially in a physical science context. It has been ten years since the last edition of Electron Microscopy and Analysis was published and there have been rapid changes in this field since then. The authors h
