Evaluation and development of the hydrodynamic transport model for submicron silicon device analysis PDF Download
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Author: Terry James Bordelon
Publisher:
ISBN:
Category : Charge transfer devices (Electronics)
Languages : en
Pages : 250
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Author: Terry James Bordelon
Publisher:
ISBN:
Category : Charge transfer devices (Electronics)
Languages : en
Pages : 250
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 800
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 858
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Author: Graham F. Carey
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 452
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Book Description
This book presents for the first time a unified treatment of the physical processes, mathematical models and numerical techniques for circuit, device and process simulation. At the macroscopic level linear and nonlinear circuit elements are introduced to yield a mathematical model of an integrated circuit. Numerical techniques used to solve this coupled system of ODEs are described. Microscopically, current flow within a transistor is modeled using the drift-diffusion and hydrodynamic PDE systems. Finite difference and finite element methods for spatial discretizations are treated, as are grid generation and refinement, upwinding, and multilevel schemes. At the fabrication level, physical processes such as diffusion, oxidation, and crystal growth are modeled using reaction-diffusion-convection equations. These models require multistep integration techniques and Krylov projection methods for successful implementation. Exercises, programming assignments, and an extensive bibliography are included to reinforce and extend the treatment.
Author: Massimo Rudan
Publisher: Springer Nature
ISBN: 3030798275
Category : Technology & Engineering
Languages : en
Pages : 1680
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Book Description
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author: Qi Lin (Ph. D.)
Publisher:
ISBN:
Category : Hydrodynamics
Languages : en
Pages : 350
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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1118
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Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309
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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Electrochemical Society
Publisher:
ISBN:
Category : Electrochemistry
Languages : en
Pages : 994
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Book Description
