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Author:
Publisher:
ISBN: 9781509085422
Category :
Languages : en
Pages :
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Book Description
Author:
Publisher:
ISBN: 9781509085422
Category :
Languages : en
Pages :
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Book Description
Author: Institute of Electrical and Electronics Engineers
Publisher:
ISBN:
Category :
Languages : en
Pages : 387
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Book Description
Author: Paul Chu
Publisher: BoD – Books on Demand
ISBN: 9533070862
Category : Technology & Engineering
Languages : en
Pages : 458
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Book Description
This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields.
Author: International Solid State Circuits Conference
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Jordi Colomer-Farrarons
Publisher: Springer Science & Business Media
ISBN: 9400706863
Category : Technology & Engineering
Languages : en
Pages : 169
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Book Description
A CMOS Self-Powered Front-End Architecture for Subcutaneous Event-Detector Devices presents the conception and prototype realization of a Self-Powered architecture for subcutaneous detector devices. The architecture is designed to work as a true/false (event detector) or threshold level alarm of some substances, ions, etc... that are detected through a three-electrodes amperometric BioSensor approach. The device is envisaged as a Low-Power subcutaneous implantable application powered by an inductive link, one emitter antenna at the external side of the skin and the receiver antenna under the skin. The sensor is controlled with a Potentiostat circuit and then, a post-processing unit detects the desired levels and activates the transmission via a backscattering method by the inductive link. All the instrumentation, except the power module, is implemented in the so called BioChip. Following the idea of the powering link to harvest energy of the magnetic induced link at the implanted device, a Multi-Harvesting Power Chip (MHPC) has been also designed.
Author: International Solid State Circuits Conference
Publisher:
ISBN:
Category :
Languages : en
Pages : 402
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Book Description
Author: Achim Seidel
Publisher: Springer Nature
ISBN: 3030689409
Category : Technology & Engineering
Languages : en
Pages : 137
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Book Description
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1351832085
Category : Technology & Engineering
Languages : en
Pages : 450
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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 655
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Book Description
Author: Qiang Cui
Publisher: Springer
ISBN: 3319108190
Category : Technology & Engineering
Languages : en
Pages : 99
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Book Description
This book enables readers to design effective ESD protection solutions for all mainstream RF fabrication processes (GaAs pHEMT, SiGe HBT, CMOS). The new techniques introduced by the authors have much higher protection levels and much lower parasitic effects than those of existing ESD protection devices. The authors describe in detail the ESD phenomenon, as well as ESD protection fundamentals, standards, test equipment, and basic design strategies. Readers will benefit from realistic case studies of ESD protection for RFICs and will learn to increase significantly modern RFICs’ ESD safety level, while maximizing RF performance.
