Effects of 2 MeV Ge+ Irradiation on AlGaN/GaN High Electron Mobility Transistors PDF Download
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Author:
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Category :
Languages : en
Pages : 15
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Author:
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Category :
Languages : en
Pages : 15
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Author: Fernand D. S. Marquis
Publisher: John Wiley & Sons
ISBN: 1118792130
Category : Technology & Engineering
Languages : en
Pages : 3600
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PRICM-8 features the most prominent and largest-scale interactions in advanced materials and processing in the Pacific Rim region. The conference is unique in its intrinsic nature and architecture which crosses many traditional discipline and cultural boundaries. The CD is a comprehensive collection of papers from the 15 symposia presented at this event.
Author: Anupama Yadav
Publisher:
ISBN:
Category :
Languages : en
Pages : 107
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In this study, the fundamental properties of AlGaN/GaN based High Electron Mobility Transistors (HEMTs) have been investigated in order to optimize their performance in radiation harsh environment. AlGaN/GaN HEMTs were irradiated with 60Co gamma-rays to doses up to 1000 Gy, and the effects of irradiation on the devices' transport and optical properties was analyzed. Understanding the radiation affects in HEMTs devices, on carrier transport, recombination rates and traps creation play a significant role in development and design of radiation resistant semiconductor components for different applications.
Author: Jin Chen
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 95
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Author: Michael Hosch
Publisher: Cuvillier Verlag
ISBN: 3736938446
Category : Technology & Engineering
Languages : en
Pages : 129
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This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Author: Thomas D. Jarzen
Publisher:
ISBN:
Category : Electron mobility
Languages : en
Pages : 242
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Author: Monta Raymond Holzworth (Jr)
Publisher:
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Category :
Languages : en
Pages : 192
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AlGaN/GaN high electron mobility transistors are unique for their combination of high temperature, high power, and high frequency applications. Compared to Si, Ge, and compound semiconductors such as GaAS and InP, AlGaN/GaN transistors outclass the current technology due to their superior combination of high breakdown voltage and high frequency performance. These characteristics arise from structural and electrical properties inherent to the AlGaN/GaN heterojunction which have enabled AlGaN/GaN transistors usage in important military and civilian applications such as microwave and millimeter technology, RADAR systems, and as high current and voltage switches in utility grid systems. As the technology continues to improve due to increased materials quality and device advancements, future applications will require AlGaN/GaN transistor usage under even higher voltages and temperatures. Therefore, the effects of these stresses need to be investigated in order improve device performance and reliability.
Author: Isaak Knox Samsel
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 47
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Author: Jin Chen
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 69
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Author: Markus Wohlfahrt
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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