Development of Zinc Oxide Based Light Emitting Diodes and Laser Diodes PDF Download
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Author: Jieying Kong
Publisher:
ISBN:
Category : Light emitting diodes
Languages : en
Pages : 0
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Book Description
Author: Jieying Kong
Publisher:
ISBN:
Category : Light emitting diodes
Languages : en
Pages : 0
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Book Description
Author: Jau-Jiun Chen
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: ZnO-based materials have great potential for UV light-emitting diodes (LEDs) and transparent electronics because of the high exciton binding energy of ZnO relative to GaN. Fabricating an effective LED from novel materials requires a detailed knowledge of the band offset, etch, and contact behavior of the material. This work determined the valence and conduction band offsets for Zn095Cd0.05O/ZnO (0.17 eV, 0.30 eV) and related materials using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). These methods were also used to study carrier confinement in two promising passivation materials: MgO/GaN (1.06 eV, 3.30 eV) and Sc2O3/GaN (0.42 eV, 2.14 eV). To form an LED mesa, it is critical to understand the etch rate of ZnO-based materials. In this work, HCl and H3PO4 were used as etchants for ZnCdO/ZnO (~50 nm·1-min−1 HCl/~15 nm·min−1 H3PO4) and ZnMgO/ZnO (300-1100 nm·min−1 HCl/120-300 nm·min−1H3PO4). A high degree of selectivity was sought using these etchants on ZnCdO/ZnO (~50 HCl/~15 H3PO4) and ZnMgO/ZnO (~300-400 HCl/~25 H3PO4). Alloyed Ti/Au and Ti/Al/Pt/Au contacts were deposited on n-type Zn095Cd0.05O, with excellent contact resistivities of and 2.3x10−4 and 1.6x10−4 ohm-cm2, respectively. Alloyed Ti/Au and indium-tin-oxide (ITO)/Ti/Au metallization of n-type Al-doped ZnO was used to create ohmic metal contacts with excellent contact resistivities of 6x10−8 and 4.6x10−6ohm-cm2. Using SiLENSe Software, the optimum active layer thickness was found to be 200 nm.
Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 1000687155
Category : Science
Languages : en
Pages : 565
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Book Description
Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
Author: Magnus Willander
Publisher: CRC Press
ISBN: 9814411337
Category : Technology & Engineering
Languages : en
Pages : 234
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Book Description
Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic devices. This book presents up-to-date information about various synthesis methods to obtain device-quality ZnO nanostructures. It describes both high-temperature (over 100° C) and low-temperature (under 100° C) approaches to synthesizing ZnO nanostructures; device applications for technical and medical devices, light-emitting diodes, electrochemical sensors, nanogenerators, and photodynamic therapy; and the concept of self-powered devices and systems using ZnO nanostructures. The book emphasizes the utilization of non-conventional substrates such as plastic, paper, and textile as new platforms for developing electronics.
Author: Man-Ching Alan Ng
Publisher: Open Dissertation Press
ISBN: 9781360991337
Category :
Languages : en
Pages :
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This dissertation, "Light Emitting Diodes Based on ZnO Nanorods" by Man-ching, Alan, Ng, 吳文政, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4357200 Subjects: Zinc oxide Light emitting diodes Nanostructures
Author: Hyun-Sik Kim
Publisher:
ISBN:
Category :
Languages : en
Pages :
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ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P/ Zn[subscript 0.9]Mg[subscript 0.1]O/ZnO/ Zn[subscript 0.9]Mg[subscript 0.1]O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing.
Author: Norbert H. Nickel
Publisher: Springer Science & Business Media
ISBN: 140203475X
Category : Science
Languages : en
Pages : 245
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Book Description
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
Author: Cole W. Litton
Publisher: John Wiley & Sons
ISBN: 0470519711
Category : Technology & Engineering
Languages : en
Pages : 403
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Book Description
Zinc Oxide (ZnO) powder has been widely used as a white paint pigment and industrial processing chemical for nearly 150 years. However, following a rediscovery of ZnO and its potential applications in the 1950s, science and industry alike began to realize that ZnO had many interesting novel properties that were worthy of further investigation. ZnO is a leading candidate for the next generation of electronics, and its biocompatibility makes it viable for medical devices. This book covers recent advances including crystal growth, processing and doping and also discusses the problems and issues that seem to be impeding the commercialization of devices. Topics include: Energy band structure and spintronics Fundamental optical and electronic properties Electronic contacts of ZnO Growth of ZnO crystals and substrates Ultraviolet photodetectors ZnO quantum wells Zinc Oxide Materials for Electronic and Optoelectronic Device Applications is ideal for university, government, and industrial research and development laboratories, particularly those engaged in ZnO and related materials research.
Author: Elaine Michelle Lai
Publisher:
ISBN:
Category :
Languages : en
Pages : 218
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Book Description
Light emitting diodes are robust and high efficiency light sources that have the potential to replace all lighting applications in the future. Some hindrances to ubiquitous adoption of LEDs though are cost per lumen and lack of high quality materials for green emission or tunable emission. Innovations are needed to continue improving overall efficiency of light emitting diodes as well as finding suitable materials to achieve complete visible tunability. Novel light emitting diodes are made from nanoscale materials to explore potential advantages over conventional thin film approaches. These atomic-scale structures have unique electrical and optical properties that could potentially lead to increased efficiencies. Three platforms for improved light emitting diodes were designed, fabricated, and characterized. The first consisted of an n-type ZnO vertical nanowire array grown epitaxially from a p-type GaN thin film. The resulting device showed an increase of 13% in light output in the vertical direction as compared to a thin film LED due to waveguiding of light in the vertically oriented nanowires. The second device took advantage of the ability to synthesize InxGa1-xN materials in nanowire form with x greater than 30%, which would otherwise be unstable in thin film form due to phase segregation. Nanowire arrays were grown on top of conventional InGaN QW LEDs. Resulting light emission was a combination of transmitted QW blue electroluminescence and color converted photoluminescence from the array. Colors achieved ranged from blue, to blue-green, and red-orange. The final platform explored enhancement of electroluminescence by metal coating of nanopillar LEDs. The metal layer is proposed to confine light along the nanopillar and enhance radiative emission due to surface plasmons. Preliminary results suggest some extent of enhanced electroluminescence. However, fidelity of these results needs to be further explored due to concerns of light leakage through cracks in the metal layer. Nanowire based light emitting diodes were fabricated and shown to offer advantages over thin film LEDs due to waveguiding of light in the nanowire, full-spectrum tunability, and surface plasmon electroluminescent enhancement.
Author: Morteza Sasani Ghamsari
Publisher: BoD – Books on Demand
ISBN: 9535135759
Category : Technology & Engineering
Languages : en
Pages : 171
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Book Description
Quantum dot-based light emitting diodes were assigned to bringing together the latest and most important progresses in light emitting diode (LED) technologies. In addition, they were dedicated to gain the perspective of LED technology for all of its advancements and innovations due to the employment of semiconductor nanocrystals. Highly selective, the primary aim was to provide a visual source for high-urgency work that will define the future directions relating to the organic light emitting diode (OLED), with the expectation for lasting scientific and technological impact. The editor hopes that the chapters verify the realization of the mentioned aims that have been considered for editing of this book. Due to the rapidly growing OLED technology, we wish this book to be useful for any progress that can be achieved in future.
