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Author: Bei Yu
Publisher: Springer
ISBN: 3319203851
Category : Technology & Engineering
Languages : en
Pages : 173
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Book Description
This book introduces readers to the most advanced research results on Design for Manufacturability (DFM) with multiple patterning lithography (MPL) and electron beam lithography (EBL). The authors describe in detail a set of algorithms/methodologies to resolve issues in modern design for manufacturability problems with advanced lithography. Unlike books that discuss DFM from the product level or physical manufacturing level, this book describes DFM solutions from a circuit design level, such that most of the critical problems can be formulated and solved through combinatorial algorithms.
Author: Bei Yu
Publisher: Springer
ISBN: 3319203851
Category : Technology & Engineering
Languages : en
Pages : 173
Get Book Here
Book Description
This book introduces readers to the most advanced research results on Design for Manufacturability (DFM) with multiple patterning lithography (MPL) and electron beam lithography (EBL). The authors describe in detail a set of algorithms/methodologies to resolve issues in modern design for manufacturability problems with advanced lithography. Unlike books that discuss DFM from the product level or physical manufacturing level, this book describes DFM solutions from a circuit design level, such that most of the critical problems can be formulated and solved through combinatorial algorithms.
Author: Bei Yu
Publisher:
ISBN:
Category :
Languages : en
Pages : 488
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Book Description
Shrinking the feature size of very large scale integrated circuits (VLSI) with advanced lithography has been a holy grail for the semiconductor industry. However, the gap between manufacturing capability and the expectation of design performance becomes critically challenged in sub-16nm technology nodes. To bridge this gap, design for manufacturing (DFM) is a must to co-optimize both design and lithography process at the same time. DFM for advanced lithography could be defined very differently under different circumstances. In general, progress in advanced lithography happens along three different directions: (1) New patterning technique (e.g., layout decomposition for different patterning techniques); (2) New design methodology (e.g., lithography aware standard cell design and physical design); (3) New illumination system (e.g., layout fracturing for EBL system, stencil planning for EBL system). In this dissertation, we present our research results on design for manufacturing (DFM) with multiple patterning lithography (MPL) and electron beam lithography (EBL) addressing these three DFM research directions in advanced lithography. For the research direction of new patterning technique, we study the layout decomposition problems for different patterning technique and explore four important topics: (1) layout decomposition for triple patterning; (2) density balanced layout decomposition for triple patterning; (3) layout decomposition for triple patterning with end-cutting; (4) layout decomposition for quadruple patterning and beyond. We present the proof that triple patterning layout decomposition is NP-hard. Besides, we propose a number of CAD optimization and integration techniques to solve different problems. For the research direction of new design methodology, we will show the limitation of traditional design flow. That is, ignoring triple patterning lithography (TPL) in early stages may limit the potential to resolve all the TPL conflicts. We propose a coherent framework, including standard cell compliance and detailed placement, to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement where the layout decomposition and placement can be resolved simultaneously. In addition, we propose a linear dynamic programming to solve TPL aware detailed placement with maximum displacement, which can achieve good trade-off in terms of runtime and performance. For the EBL illumination system, we focus on two topics to improve the throughput of the whole EBL system: (1) overlapping aware stencil planning under MCC system; (2) L-shape based layout fracturing for mask preparation. With simulations and experiments, we demonstrate the critical role and effectiveness of DFM techniques for the advanced lithography, as the semiconductor industry marches forward in the deeper sub-micron domain.
Author: Seongbo Shim
Publisher: Springer
ISBN: 331976294X
Category : Technology & Engineering
Languages : en
Pages : 144
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Book Description
This book discusses physical design and mask synthesis of directed self-assembly lithography (DSAL). It covers the basic background of DSAL technology, physical design optimizations such as placement and redundant via insertion, and DSAL mask synthesis as well as its verification. Directed self-assembly lithography (DSAL) is a highly promising patterning solution in sub-7nm technology.
Author: Chul-Hong Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 202
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Book Description
Photolithography has been a key enabler of the aggressive IC technology scaling implicit in Moore's Law. As minimum feature sizes approach the physical limits of lithography and the manufacturing process, resolution enhancement techniques (RETs) dictate certain tradeoffs with various aspects of process and performance. This in turn has led to unpredictable design, unpredictable manufacturing, and low yield. As a result, close communication between designer and manufacturer has become essential to overcome the uncertainties of design and manufacturing. The design for manufacturability (DFM) paradigm has emerged recently to improve communications at the design-manufacturing interface and to reduce manufacturing variability. DFM is a set of technologies and methodologies that both help the designer extract maximum value from silicon process technology and solve "unsolvable" manufacturing challenges. Traditional DFM techniques, which include design rule check (DRC) and optical proximity correction (OPC), have been successfully used until now. However, as the extent and complexity of lithography variations increase, traditional techniques are no longer adequate to accommodate the various lithography demands. This thesis focuses on ways to mitigate the impact of lithography variations on design by establishing new interfaces between design and manufacturing. The motivations for doing so are improved printability, timing and leakage as well as reduced design cost. To improve printability, we propose a detailed placement perturbation technique for improved depth of focus and process window. Using a dynamic programming (DP)-based method for the perturbation, the technique facilitates insertion of scattering bars and etch dummy features, reducing inter-cell forbidden pitches almost completely. We also propose a novel auxiliary pattern-enabled cell-based OPC which can improve the edge placement error over cell-based OPC. The technique improves runtime which has grown unacceptably in model-based OPC, while retaining its runtime advantage as well as timing and leakage optimization. The detailed placement framework is also available to allow opportunistic insertion of auxiliary pattern around cell instances in the design layout. Aberration leads to linewidth variation which is fundamental to achieve timing performance and manufacturing yield. We describe an aberration-aware timing analysis flow that accounts for aberration-induced cell delay variations. We then propose an aberration-aware timing-driven global placement technique which utilizes the predictable slow and fast regions created on the chip due to aberration to improve cycle time. The use of the technique along with field blading achieves significant cycle time improvement. DoseMapper technique adopted in advanced lithography equipments has been used to reduce the across-chip linewidth variation. We propose a novel method to enhance timing yield as well as reduce leakage power by combined dose map and placement optimizations. The new dose map is not determined to have the same critical dimension (CD) in all transistor gates, but optimized to have different linewidths. That is, for devices on setup timing-critical paths, a smaller than nominal CD will be desirable, since this creates a faster-switching transistor. On the other hand, for devices on hold timing-critical paths, a larger than nominal gate CD will be desirable since this creates a less leaky transistor. Last, the golden verification signoff tool using simulation-based approach represents a runtime-quality tradeoff that is high in quality, but also high in runtime. We are motivated to develop a low-runtime pre-filter that reduces the amount of layout area to be analyzed by the golden tool, without compromising the overall quality finding hotspots. We demonstrate a dual graph-based hotspot filtering technique that enables fast and accurate estimation.
Author: Artur Balasinski
Publisher: Springer Science & Business Media
ISBN: 1461417619
Category : Technology & Engineering
Languages : en
Pages : 283
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Book Description
This book explains integrated circuit design for manufacturability (DfM) at the product level (packaging, applications) and applies engineering DfM principles to the latest standards of product development at 22 nm technology nodes. It is a valuable guide for layout designers, packaging engineers and quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package.
Author: Jiaojiao Ou
Publisher:
ISBN:
Category :
Languages : en
Pages : 276
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Book Description
In ultra-scaled very-large-scale integration (VLSI), lithography has become the bottleneck in integrated circuit (IC) fabrication. Since the conventional 193nm immersion lithography has reached the resolution limit, multiple patterning (MP) is adopted in order to meet the pitch requirement of ultra-scaled design. However, the manufacturing cost also increases dramatically with the growth of number of masks at the same time. Therefore, industries are looking for alternative lithography techniques to extend the 193nm immersion lithography to the sub-7nm nodes. With the continuous delaying of Extreme Ultraviolet (EUV), Directed Self-Assembly (DSA) lithography has emerged as one of the promising alternative lithography techniques due to its low cost, high throughput, and its ability to multiply the pitch of lines and vias. DSA has been intensively explored by both industry and academia in recent years. Memory and the dense via layer in logic might be the first application of DSA lithography in the mainstream IC production. DSA can also be applied on fabrication of cut masks to reduce the overall wire extensions. However, there are still many challenges, such as defectivity, line edge roughness and placement accuracy, which prevent DSA from the high-volume manufacturing. Integrating this technology into the fab flow and designing circuit around it also remain to be problematic. Considering the limitations and constraints of the topologies of DSA, this dissertation investigates and proposes novel algorithms for the DSA-aware design problem in the areas of design for manufacturability and physical design. First, a DSA based cut mask optimization for unidirectional design is proposed. Efficient algorithm is developed to assign DSA guiding template to metal line ends to minimize wire extensions and conflicts. Second, as redundant via insertion has been widely used in the post-routing stage to improve the yield, but the insertion of more vias introduces challenges for DSA patterning. This dissertation proposes a novel approach to perform the DSA aware redundant via insertion to improve the redundant via insertion rate and DSA compatibility. Since both via grouping and DSA guiding template decomposition are the essential problems for DSA aware design, which should be solved concurrently, this dissertation also proposes an efficient algorithm to solve this problem. Considering multiple patterning has already been used in DSA lithography, a coherent work, including single block-copolymer (BCP) and double block-copolymer guiding template assignment, is proposed for DSA and multiple pattering hybrid lithography. In addition, it is also noticed that optimization in the post-routing stage is not enough to eliminate DSA patterning violations, thus this dissertation also proposes the DSA compliant detailed routing algorithm with concurrent double pattering and guiding templates assignment.
Author: Charles Chiang
Publisher: Springer Science & Business Media
ISBN: 1402051883
Category : Technology & Engineering
Languages : en
Pages : 277
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Book Description
This book walks the reader through all the aspects of manufacturability and yield in a nano-CMOS process. It covers all CAD/CAE aspects of a SOC design flow and addresses a new topic (DFM/DFY) critical at 90 nm and beyond. This book is a must read book the serious practicing IC designer and an excellent primer for any graduate student intent on having a career in IC design or in EDA tool development.
Author: Bruce W. Smith
Publisher: CRC Press
ISBN: 1351643444
Category : Technology & Engineering
Languages : en
Pages : 770
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Book Description
The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.
Author: Vivek Bakshi
Publisher: SPIE Press
ISBN: 0819469645
Category : Art
Languages : ru
Pages : 704
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Book Description
Editorial Review Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field. --Dr. Akira Endo, Chief Development Manager, Gigaphoton Inc. Description Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current 193-nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists. This comprehensive volume is comprised of contributions from the world's leading EUVL researchers and provides all of the critical information needed by practitioners and those wanting an introduction to the field. Interest in EUVL technology continues to increase, and this volume provides the foundation required for understanding and applying this exciting technology. About the editor of EUV Lithography Dr. Vivek Bakshi previously served as a senior member of the technical staff at SEMATECH; he is now president of EUV Litho, Inc., in Austin, Texas.
Author: Ancuta Carmen Păcurar
Publisher: BoD – Books on Demand
ISBN: 1789849357
Category : Technology & Engineering
Languages : en
Pages : 102
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Book Description
The book entitled Application of Design for Manufacturing and Assembly aims to present applicable research in the field of design, manufacturing, and assembly realized by researchers affiliated to well-known institutes. The book has a profound interdisciplinary character and is addressed to researchers, engineers, PhD students, graduate and undergraduate students, teachers, and other readers interested in assembly applications. I am confident that readers will find interesting information and challenging topics of high academic and scientific level within this book. The book presents case studies focused on new design for special parts using the principles of Design for Manufacturing and Assembly (DFMA), strategies that minimize the defects in design and manufacturing applications, special devices produced to replace human activity, multiple criteria analysis to evaluate engineering solutions, and the advantages of using the additive manufacturing technology to design the next generation of complex parts, in different engineering fields.
