Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency PDF Download
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Languages : en
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Languages : en
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Author: William K. Snodgrass
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Languages : en
Pages : 120
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Author: Martin W. Dvorak
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ISBN:
Category : Bipolar transistors
Languages : en
Pages : 356
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Author: Metin Ayata
Publisher:
ISBN:
Category :
Languages : en
Pages : 82
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Book Description
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today's state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.
Author: Iwan Schnyder
Publisher:
ISBN: 9783866280007
Category : Bipolar transistors
Languages : en
Pages : 267
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Author: Suman Datta
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Category :
Languages : en
Pages : 552
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Author: Rickard Lövblom
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Category :
Languages : en
Pages :
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Author: Jianjun Gao
Publisher: John Wiley & Sons
ISBN: 1118921542
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Author: Peter Ashburn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
