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Author: Gordon Davies
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 726
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Book Description
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.
Author: Gordon Davies
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 726
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Book Description
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. The present three-volume set provides a complete update on recent developments in the general area of defects in semiconductors, and covers a wide range of subjects. It will be Invaluable to professionals working in the field of semiconductor research and to all of those who need to be kept up-to-date on the most recent findings in this area. Part 1: 1. Plenary Sessions. 2. Germanium. 3. Alloys of Si, Ge and C. 4. Silicon: Hydrogen. 5. Silicon: Oxygen. 6. Silicon: Metals. 7. Silicon: Radiation Damage. Part 2: 8. Silicon Carbide. 9. Diamond. 10. Indium Phosphide. 11. Gallium Arsenide: Impurities. 12. Antisite Defects and EL2. 13. Gallium Arsenide: Radiation Damage. 14. Gallium Phosphide. 15. Gallium Nitride. 16. Other III-V Compounds. Part 3: 17. Aluminium Gallium Arsenide. 18. II-VI Compound Semiconductors. 19. Cadmium Fluoride. 20. Chalcopyrites and Other Host Lattices. 21. Erbium. 22. Low Dimensional Structures. 23. Surfaces and Interfaces. 24. Diffusion.
Author: Gordon Davies
Publisher: Trans Tech Publications Ltd
ISBN: 3035705240
Category : Technology & Engineering
Languages : en
Pages : 1932
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Book Description
Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 648
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Book Description
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 596
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps. semiconductors (silicon and III-V materials), plus radiation effects on detector materials. Topics will also include: (1) GaN, (2) Nanostructures, (3) Large bandgap materials, (4) defects in Epitaxial growth, (5) self-organizing rare earth, (6) metastable defects, (7) pairs and complexes, (8) defect reactions, and (9) radiation effects on detector material.
Author: Gordon Davies
Publisher:
ISBN:
Category :
Languages : en
Pages : 615
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Book Description
The Final Proceedings for International Conference of Defects in Semiconductors, 21 July 1997 - 25 July 1997 Emphasis will be given on the properties of wide-bandgap materials, including quantum enhancement of effective band-gaps, semiconductors (silicon and III-V materials), plus radiation effects on detector materials. Topics will also include: (1) GaN, (2) Nanostructures, (3) Large bandgap materials, (4) defects in Epitaxial growth, (5) self-organizing rare earth, (6) metastable defects, (7) pairs and complexes, (8) defect reactions, and (9) radiation effects on detector material.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: M. Suezawa
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 608
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Book Description
The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.
Author: Helmut Heinrich
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 444
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Book Description
This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials, including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
Author:
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Category :
Languages : en
Pages :
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