Deep Level Defects in Electron-irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy PDF Download
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Author: Michael R. Hogsed
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 370
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Author: Michael R. Hogsed
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 370
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Author: Robert David Armitage
Publisher:
ISBN:
Category :
Languages : en
Pages : 462
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Author: James Suk Chan
Publisher:
ISBN:
Category :
Languages : en
Pages : 280
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Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572
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Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 236
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Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 858
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Author: Susan M. Lindsay
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 130
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Publisher:
ISBN:
Category : Electroluminescent devices
Languages : en
Pages : 1014
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Author:
Publisher:
ISBN:
Category : Chemical abstracts
Languages : en
Pages : 2598
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Author: Sheng S. Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 89
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Book Description
Investigation on the nature of deep-level defects in Gallium Arsenide and Aluminum sub x Gallium sub 1-x Arsenide (e.g., EL2 and DX center) grown under the various conditions has been performed by; 1) modeling the physical origins of EL2 center in GaAs based on the kinetic reaction equations and the analysis of field-enhanced emission rate, 2) correlation of deep-level defects in multi-epilayer GaAs grown by metalorganic chemical vapor deposition to the various growth parameters, 3) determination of field enhanced thermal emission rate of deep-level defects by reverse-biased deep level transient spectroscopy, 4) study on the Be- and Sn- related complex defects in LPE grown Aluminum sub x Gallium sub 1-x Arsenide (0.2
