Current Collapse and Device Degradation in AlGaN/GaN Heterostructure Field Effect Transistors PDF Download
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Author: Daniel Balaz
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 157
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Book Description
Author: Daniel Balaz
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 157
Get Book Here
Book Description
Author: Daniel Balaz
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A spectrum of phenomena related to the reliability of AlGaN/GaN HEMTs are investigatedin this thesis using numerical simulations. The focus is on trap related phenomena that leadto decrease in the power output and failure of devices, i.e. the current collapse and thedevice degradation. The current collapse phenomenon has been largely suppressed usingSiN passivation, but there are gaps in the understanding of the process leading to thiseffect. Device degradation, on the other side, is a pending problem of current devices andan obstacle to wide penetration of the market. Calibration of I-V measurements of two devices is performed with high accuracy toprovide a trustworthy starting point for modelling the phenomena of interest. Traditionally, in simulations of nitride based HEMTs, only direct piezoelectric effect is taken intoaccount and the resulting interface charge is thence independent of the electric field. In thiswork, the impact of the electric field via the converse piezoelectric effect is taken intoaccount and its impact on the bound charge and the drain current is studied, as a refinementof the simulation methodology. It is widely believed that the current collapse is caused by a virtual gate, i.e. electronsleaked to the surface of the device. We have found a charge distribution that reproducedthe I-V measurement that shows current collapse, hence validating the concept of thevirtual gate. While it was previously shown that the virtual gate has a similar impact on theI-V curve as is observed during the current collapse, we believe that this is for the first timethat a wide range of gate and drain voltages was calibrated. High gate/drain voltage leading to permanent degradation was also investigated. Thehypothesis that stress induced defects and dislocations might be responsible for thedegradation was tested but not fully confirmed. Finally, the leakage of electrons thought to be responsible for formation of the virtual gateand the current collapse due to the Poole-Frenkel emission, is simulated in order to explainthe surface charge distribution responsible for the current collapse and deduced inChapter 5.
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Wengang (Wayne) Bi
Publisher: CRC Press
ISBN: 1351648055
Category : Science
Languages : en
Pages : 775
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Book Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Author: Srikanta Patnaik
Publisher: Springer Science & Business Media
ISBN: 8132216954
Category : Computers
Languages : en
Pages : 571
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Book Description
The main objective of ICSCTEA 2013 is to provide a platform for researchers, engineers and academicians from all over the world to present their research results and development activities in soft computing techniques and engineering application. This conference provides opportunities for them to exchange new ideas and application experiences face to face, to establish business or research relations and to find global partners for future collaboration.
Author: Marko Tadjer
Publisher: Woodhead Publishing
ISBN: 0128211059
Category : Technology & Engineering
Languages : en
Pages : 498
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Book Description
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. - Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods - Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies - Touches on emerging, real-world applications for thermal management strategies in power electronics
Author: Hongyu Yu
Publisher: CRC Press
ISBN: 1351767607
Category : Science
Languages : en
Pages : 301
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Book Description
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Author: Trupti Ranjan Lenka
Publisher: Springer Nature
ISBN: 9811921652
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Alex Lidow
Publisher: Efficient Power Publications
ISBN: 0615569250
Category : Science
Languages : en
Pages : 221
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Book Description
