![Chemical Bath Deposited Zinc Cadmium Sulfide and Sputter Deposted [sic] Zinc Oxide for Thin Film Solar Cell Device Fabrication PDF](https://books.google.com/books/content/images/frontcover/AS2oDAEACAAJ?fife=w80-h100)
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Languages : en
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The effect of thermal treatments on sputter deposited AZO and HAZO films are determined by way of rapid thermal annealing. High temperature annealing of ZnO is found to improve film characteristics. The gas ambient used in the thermal treatment process is found to be a critical parameter in post-anneal film quality. Gas ambients of nitrogen, argon, and forming gas, a nitrogen and hydrogen mixture, were employed in the thermal treatment studies. In general, optical transmission and resistivity improve for all films under each ambient, although films annealed in forming gas show the most improvement, with resulting figure of merit values two to three times their as deposited values.
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Languages : en
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Author: Peter Fuchs
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Languages : en
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Author: Jérôme Steinhauser
Publisher: Lulu.com
ISBN: 1409284514
Category :
Languages : en
Pages : 163
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Author: J. R. Szedon
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Category : Cadmium plating
Languages : en
Pages : 40
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Author: Zhe Chuan Feng
Publisher: CRC Press
ISBN: 1000687155
Category : Science
Languages : en
Pages : 565
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Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a
Author: Lockheed Palo Alto Research Laboratory
Publisher:
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Category :
Languages : en
Pages : 44
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Author: J. R. Szedon
Publisher:
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Category : Cadmium plating
Languages : en
Pages : 44
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Author: Chennupati Jagadish
Publisher: Elsevier
ISBN: 0080464033
Category : Science
Languages : en
Pages : 600
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With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:- Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film
Author: Norbert H. Nickel
Publisher: Springer Science & Business Media
ISBN: 140203475X
Category : Science
Languages : en
Pages : 245
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Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
