Characterization of Two-dimensional Electrostatic Potential Profiles in Deep Submicron MOSFET Devices

Characterization of Two-dimensional Electrostatic Potential Profiles in Deep Submicron MOSFET Devices PDF Author: Kil-soo Ko
Publisher:
ISBN:
Category : Electron holography
Languages : en
Pages :

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Characterization of Two-dimensional Electrostatic Potential Profiles in Deep Submicron MOSFET Devices

Characterization of Two-dimensional Electrostatic Potential Profiles in Deep Submicron MOSFET Devices PDF Author: Kil-soo Ko
Publisher:
ISBN:
Category : Electron holography
Languages : en
Pages :

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Dissertation Abstracts International

Dissertation Abstracts International PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 860

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Characterization Methods for Submicron MOSFETs

Characterization Methods for Submicron MOSFETs PDF Author: Hisham Haddara
Publisher: Springer Science & Business Media
ISBN: 1461313554
Category : Technology & Engineering
Languages : en
Pages : 240

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Book Description
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

A New Inverse-modeling-based Technique for Sub-100-nm MOSFET Characterization

A New Inverse-modeling-based Technique for Sub-100-nm MOSFET Characterization PDF Author: Zachary Ka Fai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 168

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Proceedings of Mechanical Engineering Research Day 2016

Proceedings of Mechanical Engineering Research Day 2016 PDF Author: Mohd Fadzli Bin Abdollah
Publisher: Centre for Advanced Research on Energy
ISBN: 9670257700
Category :
Languages : en
Pages : 229

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This e-book is a compilation of papers presented at the Mechanical Engineering Research Day 2016 (MERD'16) - Melaka, Malaysia on 31 March 2016.

Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860

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Japanese Journal of Applied Physics

Japanese Journal of Applied Physics PDF Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1054

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IEEE TENCON 2003

IEEE TENCON 2003 PDF Author:
Publisher: Allied Publishers
ISBN: 9780780381629
Category : Artificial intelligence
Languages : en
Pages : 434

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JJAP

JJAP PDF Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 300

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Digest

Digest PDF Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 198

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