Author: Kil-soo Ko
Publisher:
ISBN:
Category : Electron holography
Languages : en
Pages :
Book Description
Characterization of Two-dimensional Electrostatic Potential Profiles in Deep Submicron MOSFET Devices
Author: Kil-soo Ko
Publisher:
ISBN:
Category : Electron holography
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Electron holography
Languages : en
Pages :
Book Description
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 860
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 860
Book Description
Characterization Methods for Submicron MOSFETs
Author: Hisham Haddara
Publisher: Springer Science & Business Media
ISBN: 1461313554
Category : Technology & Engineering
Languages : en
Pages : 240
Book Description
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Publisher: Springer Science & Business Media
ISBN: 1461313554
Category : Technology & Engineering
Languages : en
Pages : 240
Book Description
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
A New Inverse-modeling-based Technique for Sub-100-nm MOSFET Characterization
Author: Zachary Ka Fai Lee
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
Book Description
Proceedings of Mechanical Engineering Research Day 2016
Author: Mohd Fadzli Bin Abdollah
Publisher: Centre for Advanced Research on Energy
ISBN: 9670257700
Category :
Languages : en
Pages : 229
Book Description
This e-book is a compilation of papers presented at the Mechanical Engineering Research Day 2016 (MERD'16) - Melaka, Malaysia on 31 March 2016.
Publisher: Centre for Advanced Research on Energy
ISBN: 9670257700
Category :
Languages : en
Pages : 229
Book Description
This e-book is a compilation of papers presented at the Mechanical Engineering Research Day 2016 (MERD'16) - Melaka, Malaysia on 31 March 2016.
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
Book Description
Japanese Journal of Applied Physics
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1054
Book Description
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1054
Book Description
IEEE TENCON 2003
Author:
Publisher: Allied Publishers
ISBN: 9780780381629
Category : Artificial intelligence
Languages : en
Pages : 434
Book Description
Publisher: Allied Publishers
ISBN: 9780780381629
Category : Artificial intelligence
Languages : en
Pages : 434
Book Description
JJAP
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 300
Book Description
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 300
Book Description
Digest
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 198
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 198
Book Description