Characterization of Small Geometry Lightly Doped Drain MOSFETs for Threshold Voltage Measurement Techniques PDF Download
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Author: Chin Ping Wu
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 136
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Book Description
Author: Chin Ping Wu
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 136
Get Book Here
Book Description
Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1461519691
Category : Science
Languages : en
Pages : 426
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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 38 (thesis year 1993) a total of 13,787 thesis titles from 22 Canadian and 164 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 38 reports theses submitted in 1993, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Author: Mohan Yellayi
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 172
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Book Description
Abstract.
Author: Hisham Haddara
Publisher: Springer Science & Business Media
ISBN: 1461313554
Category : Technology & Engineering
Languages : en
Pages : 240
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Book Description
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Author: Sade H Shafer
Publisher: Springer Science & Business Media
ISBN:
Category : Education
Languages : en
Pages : 440
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Book Description
Cited in Sheehy, Chen, and Hurt . Volume 38 (thesis year 1993) reports a total of 13,787 thesis titles from 22 Canadian and 164 US universities. As in previous volumes, thesis titles are arranged by discipline and by university within each discipline. Any accredited university or college with a grad
Author: Juin Jei Liou
Publisher: Springer Science & Business Media
ISBN: 9780412146015
Category : Science
Languages : en
Pages : 372
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Book Description
Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Author: Robert Chien-chuan Chu
Publisher:
ISBN:
Category :
Languages : en
Pages : 168
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Book Description
Author: Carlos Galup-Montoro
Publisher: World Scientific
ISBN: 9812568107
Category : Technology & Engineering
Languages : en
Pages : 445
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Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Guntrade Roll
Publisher: Logos Verlag Berlin GmbH
ISBN: 3832532617
Category : Science
Languages : en
Pages : 240
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Book Description
The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
Author: Rajkumar B. Sivasankaran
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 190
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Book Description
