Characterization of Physical Vapor Deposited and Patterned Thin Films for Roll-to-roll Flexible Passive and Active Electronic Devices

Characterization of Physical Vapor Deposited and Patterned Thin Films for Roll-to-roll Flexible Passive and Active Electronic Devices PDF Author: James C. Switzer
Publisher:
ISBN: 9781303747441
Category : Electronic apparatus and appliances
Languages : en
Pages : 456

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Characterization of Physical Vapor Deposited and Patterned Thin Films for Roll-to-roll Flexible Passive and Active Electronic Devices

Characterization of Physical Vapor Deposited and Patterned Thin Films for Roll-to-roll Flexible Passive and Active Electronic Devices PDF Author: James C. Switzer
Publisher:
ISBN: 9781303747441
Category : Electronic apparatus and appliances
Languages : en
Pages : 456

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Book Description


Flexible Glass

Flexible Glass PDF Author: Sean M. Garner
Publisher: John Wiley & Sons
ISBN: 1118946375
Category : Technology & Engineering
Languages : en
Pages : 376

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Book Description
Provides the reader how to apply flexible glass applications that are not possible or practical to address with alternative substrate materials. Examples of technology areas include displays, touch sensors, lighting, backplanes, and photovoltaics. Built on more than 10 years of valuable discussions and collaborations focused on truly defining what flexible glass means in the context of the emerging electronic and opto-electronic applications, this book provides a broad overview as well as detailed descriptions that cover flexible glass properties, device fabrication methods, and emerging applications. It provides the basis for identifying new device designs, applications, and manufacturing processes for which flexible glass substrates are uniquely suited and encourages and enables the reader to identify and pursue advanced flexible glass applications that do not exist today and provides a launching point for exciting future directions. The chapters are grouped into three sections. The first focuses on flexible glass and flexible glass reliability and has three chapters with authors from Corning. The second section focuses on flexible glass device fabrication which includes chapters on roll-to-roll processing, vacuum deposition, and printed electronics. These chapters are authored by established experts in their respective fields that have extensive experience in processing flexible glass substrates in toolsets that range from research to pilot scale. The third section focuses on flexible glass device applications and includes chapters on photovoltaics, displays, integrated photonics, and microelectronics integration. These are authored by experts with direct experience in fabricating and characterizing flexible glass devices. The diverse list of authors and their depth of experience in working with a variety of material systems, processes, and device technologies significantly adds valuable context to the overall flexible glass discussion.

Ellipsometric Characterization of Roll-to-roll Vacuum Deposited Thin Films for Flexible Electronics

Ellipsometric Characterization of Roll-to-roll Vacuum Deposited Thin Films for Flexible Electronics PDF Author: Elizabeth M. Tiberio
Publisher:
ISBN:
Category : Coatings
Languages : en
Pages : 162

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Physical Vapor Deposition of Materials for Flexible Two Dimensional Electronic Devices

Physical Vapor Deposition of Materials for Flexible Two Dimensional Electronic Devices PDF Author: Phillip Thomas Hagerty
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 72

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Book Description
Molybdenum Disulfide (MoS2) and Tungsten Disulfide (WS2) are two materials in a larger class of materials known as Transition Metal Dichalcogenides (TMDs) that have begun emerge as semiconducting materials. When their horizontal length scale is reduced from bulk to monolayer they demonstrate surprising combinations of properties including a direct electronic band gap and mechanical flexibility. Two dimensional (2D) materials have the potential to revolutionize performance and tailorability of electro-optical devices fabricated entirely from molecularly thin materials. In a departure from traditional exfoliation or high temperature chemical vapor deposition approaches for 2D materials synthesis, novel plasma-based physical vapor (PVD) techniques were used to fabricate uniform films over large areas. This experimental approach allowed unique studies. For example, vapor phase growth allowed systematically variation of the sulfur vacancy concentration in MoS2 and WS2 and subsequent correlation to electronic properties. This effort leads to controlled bottom-up assembly of 2D devices on flexible and standard substrates to experimentally couple the remarkable intrinsic mechanical and electronic properties of ultrathin materials, which are particularly appealing for molecular sensing. The pursuit of an all physical vapor deposited field effect transistor (FET) is the main priority for the 2D materials community as definitive demonstration of the feasibility of physical vapor deposition as a scalable technique for consumer electronics. PVD sputtered Titanium Nitride (TiN) and Tungsten (W) were experimentally characterized as potential back gated materials, Plasma Vapor Deposited (PLD) a-BN was electrically characterized as a uniform ultra-thin low temperature dielectric, and sputtered MoS2 and WS2 were electrically characterized as a semiconductor material. Tungsten deposition methods were previously researched and mimicked for smooth and conductive back gate material depositions. TiN was parameterized and the best room temperature deposition conditions were 70V applied to the sputtering gun with 25 sccm gas flow of 90% N2 and 10% Ar for 60 minutes. The best high temperature depositions were done at 500°C, 70V applied to the sputtering gun with 25 sccm gas flow of 90% N2 and 10% Ar for 30 minutes. Dielectric a-BN electrical characterization began to occur after 6nm which equated to 100 pulses, while 200 pulses equated to 16.5nm thickness. A dielectric constant of 5.9±.65 is reported for a-BN for under 20nm thickness. Soft probing techniques by conductively pasted gold wires on the probe tips were required to obtain true electrical measurements of 2D materials in a stacked structure, otherwise scratching would occur and uniformity would cease to exist in the film. Chemical Vapor Deposition (CVD) and mechanical exfoliation have provided the only working semiconductor 2D materials in MOSFET structure to date with lithographic electrical connections. PVD sputtering as a new synthesis method for crystalline TMD with a stoichiometric ratio is achievable over large areas. Though, reduced area depositions are required for doped Silicon and Silicon Oxide (SiO2) based FET structures to limit the chance of encountering a pinhole. With reduced area and stoichiometric enhancement control, sputtered TMD films exhibit high sensitivity to oxygen and are electrically conductive even when exposed to a field effect. Increasing the grain size of the sputtered materials is the next driving force towards a fully recognizable TMD thin film transistor.

Metal Based Thin Films for Electronics

Metal Based Thin Films for Electronics PDF Author: Klaus Wetzig
Publisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 390

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Book Description
This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.

Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates

Influence of strain on the functionality of ink-jet printed thin films and devices on flexible substrates PDF Author: Mishra, Nilesha
Publisher: KIT Scientific Publishing
ISBN: 3731508532
Category :
Languages : en
Pages : 158

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Book Description


Principles of Vapor Deposition of Thin Films

Principles of Vapor Deposition of Thin Films PDF Author: Professor K.S. K.S Sree Harsha
Publisher: Elsevier
ISBN: 0080480314
Category : Technology & Engineering
Languages : en
Pages : 1173

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Book Description
The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. Principles of Vapor Deposition of Thin Films brings in to one place a diverse amount of scientific background that is considered essential to become knowledgeable in thin film depostition techniques. Its ultimate goal as a reference is to provide the foundation upon which thin film science and technological innovation are possible. * Offers detailed derivation of important formulae. * Thoroughly covers the basic principles of materials science that are important to any thin film preparation. * Careful attention to terminologies, concepts and definitions, as well as abundance of illustrations offer clear support for the text.

PVD for Microelectronics: Sputter Desposition to Semiconductor Manufacturing

PVD for Microelectronics: Sputter Desposition to Semiconductor Manufacturing PDF Author:
Publisher: Elsevier
ISBN: 0080542921
Category : Science
Languages : en
Pages : 434

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Book Description
Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems.In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.This volume, part of the Thin Films Series, has been wholly written by two authors instead of showcasing several edited manuscripts.

Recent Advances in Thin Films

Recent Advances in Thin Films PDF Author: Sushil Kumar
Publisher: Springer Nature
ISBN: 9811561168
Category : Technology & Engineering
Languages : en
Pages : 721

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Book Description
This volume comprises the expert contributions from the invited speakers at the 17th International Conference on Thin Films (ICTF 2017), held at CSIR-NPL, New Delhi, India. Thin film research has become increasingly important over the last few decades owing to the applications in latest technologies and devices. The book focuses on current advances in thin film deposition processes and characterization including thin film measurements. The chapters cover different types of thin films like metal, dielectric, organic and inorganic, and their diverse applications across transistors, resistors, capacitors, memory elements for computers, optical filters and mirrors, sensors, solar cells, LED's, transparent conducting coatings for liquid crystal display, printed circuit board, and automobile headlamp covers. This book can be a useful reference for students, researchers as well as industry professionals by providing an up-to-date knowledge on thin films and coatings.

Low Temperature Processing of Thin Films for Flexible Electronics

Low Temperature Processing of Thin Films for Flexible Electronics PDF Author: P. Joshi
Publisher: The Electrochemical Society
ISBN: 1566777259
Category : Science
Languages : en
Pages : 63

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Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Novel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.