Characterization of Ion Implanted and Annealed GaAs for an Integrated Circuit Process PDF Download
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Author: John E. Van Leeuwen
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
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Author: John E. Van Leeuwen
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
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Author: Milton L. Cone
Publisher:
ISBN:
Category :
Languages : en
Pages : 135
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The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. (Author).
Author: F. H. Eisen
Publisher:
ISBN:
Category :
Languages : en
Pages : 22
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This report presents the first quarter results of a program designed to develop a planar process technology for GaAs integrated circuits. Planar structures will be achieved by ion implantation into localized areas of semi-insulating substrates to form device areas with proper electrical characteristics. Caltech, Cornell University, and Crystal Specialties, Inc. are subcontractors in this program. In bulk crystal growth, progress in eliminating causes of boat wetting has led to a more stable substrate fabrication process with 65% yield. Keywords: Semi-insulating GaAs; Ion implantation, IC, and Integrated circuits.
Author:
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Category : Aeronautics
Languages : en
Pages : 702
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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While developing the fabrication process for GaAs-based integrated circuits numerous situations have been encountered where an in-line and post-process characterization tool which operates in a non-destructive manner was required. We will report several examples which demonstrate that the atomic force microscope (AFM) fills this characterization void in our laboratory. The AFM is extremely useful where the unintentional removal of small amounts of GaAs can be detrimental in the fabrication of devices with very thin active layers, e.g., FET channels within 30 nm of the GaAs surface. We have also characterized the use of AFM as a non-destructive tool to determine complete etching of 1.25 [mu]m Si[sub 3]N[sub 4] via holes for a two-level interconnect process. The AFM has been useful in optimizing the ion implant activation anneal conditions of Al[sub 0.75]Ga[sub 0.25]Sb epitaxial layers by comparing the morphology through RMS roughness measurements. Finally we have observed differences in wet etch results based on prior process history, such as 1-5 nm differences in etch depth and morphological differences of ion implanted vs. non-implanted areas. The results and implications from these various AFM processing studies will be presented in this paper.
Author: Peter D. Lowen
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
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Author: F. H. Eisen
Publisher:
ISBN:
Category :
Languages : en
Pages : 67
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This report covers the sixth quarter, Phase II of a program on ion implanted planar GaAs integrated circuit technology. The bulk of the work on this program is carried out at the Rockwell International Electronics Research Center (ERC). Significant assistance is provided by three subcontractors; Crystal Specialties Inc. in crystal growth, California Institute of Technology in ion implantation and related materials technologies, and Cornell University in device modeling. With MSI circuit complexity well demonstrated, the circuit developement work in this quarter was focused on the testing of MSI/LSI circuits (250-500 gates), and on the design of an LSI circuit (1000 gates). The preliminary data from the MSI/LSI circuits (from mask set AR4) are promising. Although the 5X5 but parallel multiplier (260 gates) did not operate completely and did not function at its predicted speed, the test data indicate that it can meet the design expectations when a mask error (a missing connection on 16 gates) is corrected. The 2 X 32 stage shift register (550 gates) has functioned up to 33 stages involving approximately 300 gates. Further testing is scheduled. An 8 X 8 bit parallel multiplier (1008 gates) has been designed, layed out, and the mask set containing this circuit is being fabricated. Keywords: Semi insulating, Ion implantation, Integrated circuits, High speed logic, Gallium arsenides.
Author: Bill W. Mullins (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
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Author: Xiuying Wang
Publisher: World Scientific Publishing Company
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 880
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Book Description
Patterning technology; Selective doping techniques; Materials; Rapid thermal annealing; Thin film technology; Amorphous silicon; Superconductor electronics; Advanced device technology; MOS and bipolar technology; Circuit design; Silicon on insulator technologies; Yield/reliability; Process characterization; Materials characterization; Fab operations.
Author: A. H. Agajanian
Publisher: Springer
ISBN:
Category : Reference
Languages : en
Pages : 282
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Book Description
During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
