Characterization of Group III-nitride Semiconductor Thin Films by High Resolution Electron Microscopy PDF Download
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Author: Durvasulu Chandrasekhar
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages : 120
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Book Description
Author: Durvasulu Chandrasekhar
Publisher:
ISBN:
Category : Nitrides
Languages : en
Pages : 120
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Book Description
Author: Tyler Joe Eustis
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Book Description
Author: Challa S.S.R. Kumar
Publisher: Springer Science & Business Media
ISBN: 3642389341
Category : Science
Languages : en
Pages : 718
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Book Description
Third volume of a 40volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about Transmission electron microscopy characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
Author: Çağla Özgit-Akgün
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659208232
Category :
Languages : en
Pages : 180
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Book Description
III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."
Author: Elizabeth Ann Apen
Publisher:
ISBN:
Category :
Languages : en
Pages : 348
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Author: David Cherns
Publisher: Springer Science & Business Media
ISBN: 1461305276
Category : Medical
Languages : en
Pages : 413
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Book Description
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
Author: Sandhya Gunasekara
Publisher:
ISBN:
Category : Boron nitride
Languages : en
Pages : 196
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Author: Giovanni Agostini
Publisher: Elsevier
ISBN: 0080558151
Category : Science
Languages : en
Pages : 501
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Book Description
In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author: Maxim Korytov
Publisher:
ISBN:
Category :
Languages : en
Pages : 180
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Book Description
The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.
Author:
Publisher:
ISBN: 9780198501596
Category :
Languages : en
Pages : 690
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Book Description
