Characterization of Copper Electroplating and Electropolishing Processes for Semiconductor Interconnect Metallization PDF Download
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Author: Julie Marie Mendez
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
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Author: Julie Marie Mendez
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
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Book Description
Author: Rohan Akolkar
Publisher:
ISBN:
Category :
Languages : en
Pages : 249
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Book Description
Author: G. S. Mathad
Publisher: The Electrochemical Society
ISBN: 9781566773904
Category : Science
Languages : en
Pages : 290
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Author: G. S. Mathad
Publisher: The Electrochemical Society
ISBN: 9781566772549
Category : Science
Languages : en
Pages : 358
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Author: James Adolf
Publisher:
ISBN:
Category :
Languages : en
Pages : 363
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Book Description
Metallization of semiconductor interconnects by copper electroplating has been the standard industry practice for over ten years. The technology hinges on a special plating additives mixture, formulated empirically, that enables bottom-up metallization. Further extensions of the technology, to dual damascene features smaller than 22 nm, and at the other extreme, to the more challenging, micron scale, through silicon vias (TSV0́9s), hinge on the ability to quantitatively model and optimize the process. The goal of this work is to provide a straightforward, predictive model that applies to the metallization by plating on all feature scales, which will enable the optimization and extension of the process. A critical analysis of the TSV fill process is carried out, focusing on the challenges and differences in scaling from the dual-damascene nanoscale process. A comprehensive and predictive model for the bottom up plating, taking into account additives and copper transport, time-dependent competitive adsorption of the additives including their effect on the plating process, and the effect of the changing geometry and surface area due to plating, has been developed. Limitations associated with the widely varying scales are critically analyzed and corrections to the model accounting for transport limitations of both additives and copper in the relatively large TSV scale are provided. The utilization of the model to provide optimal additives concentrations for bottom-up fill of dual damascene scale features is demonstrated. Further, a model for the critical influence of a special class of nitrogen-based additives (the so-called 0́levelers0́9) on TSV0́9s fill is provided. Analytical treatment of migration effects due to the electrical field on ionic transport in stagnant media for general electrochemical systems is provided. Application of this analysis to the bottom-up fill process indicates that the copper transport limitations and depletion are far more significant than the ohmic effects, and hence, particularly in larger features such as those encountered in TSV0́9s, the use of supporting electrolyte should be minimized. A method is developed to experimentally determine the multiple, coupled additive parameters required for the application of the model, and a systematic approach for the screening of additives expected to provide superior fill is provided. A millifluidics experimental systems was developed that automates this analysis and provides superior experimental data. Commonly used additives (Polyethylene glycol (PEG), a plating suppressor, and bis-(3-sulfopropyl) disulfide (SPS), a plating accelerator) were analyzed and their adsorption and transport parameters determined. Throughout the thesis, a complete fill model is developed as well as the necessary tools to characterize and screen additives in order to achieve void free bottom-up fill in TSVs.
Author:
Publisher: The Electrochemical Society
ISBN: 9781566773799
Category : Electronic packaging
Languages : en
Pages : 364
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Author: Ko-Ching Hou
Publisher:
ISBN:
Category :
Languages : en
Pages : 53
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Book Description
One of the most important packaging techniques is copper electroplating. A successful electroplating, whether for back-end-of-line (BEOL) interconnects or packaging applications, depends on finding the right additives for increasing plating quality or bottom-up fill, maintaining a stable bath composition and minimizing the impurity level in the plated copper. When it comes to changes in new barrier layer, seed layer and aspect ratio, challenges arise as the process flow becomes much more complicated.In silicon interconnect fabric approach, we aim to replace traditional printed circuit board (PCB) by silicon substrate. With silicon substrate, not only can we achieve high interconnect density but also high-power applications since silicon possesses outstanding thermal properties comparing with organic substrates such as PCB. However, a dense die integration requires a high-power delivery (0.7-1W/mm2) and III generates a huge amount of heat (0.5-0.7W/mm2). The power delivery through periphery I/O is not able to supply such a great amount of power (more than 50kW on 12-inch wafer). As a result, power has to be distributed through TWVs. An excellent copper electroplating process during the fabrication is a critical process since a good quality of plating provides lower IR drops and lower heat losses. In this thesis, we develop through wafer vias (TWVs) for Si-IF to deliver the power from the back of Si- IF to the front side of the wafer which can be used for potential wafer-scaled integration or attached with power delivery/cooling system. In this work, we first demonstrate the characterization of copper electroplating process including the uniformity test and surface roughness measurement. Then we move on to the development of a reliable fabrication flow of TWVs for Si-IF that enables 3D integration packaging.
Author: James B. Mohler
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 328
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Book Description
CONTENTS - Introduction - I. Mechanism of Electrodeposition - 2. Laws and Characteristics of Plating Baths - 3. The Deposit - 4. Preparatory Steps of Plating - 5. Preparation of the Surface - 6. Cleaning - 7. Pickling - 8. Strike Plating - 9. Rinsing - 10. Anodizing - 11. Brass Plating - 12. Bronze Plating - 13. Cadmium Plating - 14. Chromate Coatings - 15. Chromium Plating - 16. Acid Copper Plating - 17. Copper Cyanide Baths - 18. Iron Plating - 19. Lead Plating - 20. Lead-Tin - 21. Nickel Plating - 22. Electroless Nickel - 23. Phosphate Coatings - 24. Silver Plating - 25. Acid Tin Plating - 26. Alkaline Tin Plating - 27. Tin-Nickel - 28. Tin-Zinc - 29. Acid Zinc Baths - 30. Zinc Cyanide Baths - 31. Control of a Plating Bath - 32. Plating Tests - 33. Gravity, Conductivity, and Voltage - 34. Electroplated Alloys - 35. Layer Plating - 36. Applications of Electroplating - 37. Plating Bath Troubles - 38. Continuous Plating - 39. Plating on Plastics - 40. Preparation of Metals for Painting - 41. Analytical Methods for Plating Baths - Appendix - Conversion Factors - Electrochemical Yields - Electrochemical Formulas - Electrochemical Equivalents - Single Electrode Potentials - Stripping Chart - Glossary - Index -
Author: Perrin Walker
Publisher: CRC Press
ISBN: 9781439822531
Category : Science
Languages : en
Pages : 1434
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Book Description
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
Author: M.R. Oliver
Publisher: Springer Science & Business Media
ISBN: 9783540431817
Category : Technology & Engineering
Languages : en
Pages : 444
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Book Description
This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.
