Characterization of Cadmium Zinc Telluride Solar Cells by RF Sputtering PDF Download
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Author: Senthilnathan Subramanian
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Languages : en
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ABSTRACT: Characterization of the films was done using transmission response, X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Secondary Electron Microscopy (SEM), current-voltage (I-V) and spectral response measurements. CZT deposited on CdS/SnOb2.
Author: Senthilnathan Subramanian
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Languages : en
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ABSTRACT: Characterization of the films was done using transmission response, X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Secondary Electron Microscopy (SEM), current-voltage (I-V) and spectral response measurements. CZT deposited on CdS/SnOb2.
Author: Gowri Sivaraman
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Languages : en
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ABSTRACT: Different post deposition heat treatments were carried out to determine their effect on film and device properties. Characterization of the CZT devices was done using XRD, EDS, SIMS, J-V and spectral response measurements. CZT (Eg%7E1.7 eV) /CdS exhibited best performance when compared to the other window layers investigated. The best device exhibited Voc=640mV, FF=40% and Jsc=4.5 mA/cm2. The theoretical performance of CZT based solar cells were investigated using SCAPS. The effect of bulk and interface defects on the device parameters were studied.
Author: Ting L. Chu
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Category : Cadmium telluride
Languages : en
Pages : 0
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This report on thin-film cadmium telluride and zinc phosphide solar cells describes work on the deposition of CdTe films by direct combination of Cd and Te vapor on foreign substrates, with emphasis on the resistivity control of p-type films and on the reduction of p-CdTe/substrate interface resistance. CdTe films deposited on graphite substrates were all p-type, regardless of substrate temperature or reactant composition. Deposition and characterization of window materials also continued. Thin-film CdTe heterojunction solar cells were also prepared and characterized. The best CdS/CdTe cells in this work have had an AM1 efficiency of about 6.5% and the best ITO/CdTe cell to date has had an AM1 efficiency of about 8%.
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Category : Power resources
Languages : en
Pages : 754
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Author:
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Category :
Languages : en
Pages : 108
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This report describes work to improve the basic understanding of CdTe and ZnTe alloys by growing and characterizing these films along with cell fabrication. The major objective was to develop wide-band-gap (1.6--1.8 eV) material for the top cell, along with compatible window material and transparent ohmic contacts, so that a cascade cell design can be optimized. Front-wall solar cells were fabricated with a glass/SnO2/CdS window, where the CdS film is thin to maximize transmission and current. Wide-band-gap absorber films (E{sub g} = 1.75 eV) were grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) techniques, which provided excellent control for tailoring the film composition and properties. CdZnTe films were grown by both MBE and MOCVD. All the as-grown films were characterized by several techniques (surface photovoltage spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS)) for composition, bulk uniformity, thickness, and film and interface quality. Front-wall-type solar cells were fabricated in collaboration with Ametek Materials Research Laboratory using CdTe and CdZnTe polycrystalline absorber films. The effects of processing on ternary film were studied by AES and XPS coupled with capacitance voltage and current voltage measurements as a function of temperature. Bias-dependent spectral response and electrical measurements were used to test some models in order to identify and quantify dominant loss mechanisms.
Author: Ting L. Chu
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Category : Cadmium telluride
Languages : en
Pages : 41
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Book Description
This report on thin-film cadmium telluride and zinc phosphide solar cells describes work on the deposition of CdTe films by direct combination of Cd and Te vapor on foreign substrates, with emphasis on the resistivity control of p-type films and on the reduction of p-CdTe/substrate interface resistance. CdTe films deposited on graphite substrates were all p-type, regardless of substrate temperature or reactant composition. Deposition and characterization of window materials also continued. Thin-film CdTe heterojunction solar cells were also prepared and characterized. The best CdS/CdTe cells in this work have had an AM1 efficiency of about 6.5% and the best ITO/CdTe cell to date has had an AM1 efficiency of about 8%.
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Languages : en
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Numerous cadmium telluride films with excess Cd or Te have been prepared by controlled rf sputtering technique and characterized. It is found that slight excess of Cd or Te affects the structure, as well as the electrical resistivity of the film, markedly. Ohmic contacts with fairly low contact resistance have been achieved on Cd-rich specimens.
Author: Christos Savva Ferekides
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Category : Cadmium telluride
Languages : en
Pages : 210
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Author: Vishwanath Kumar
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Languages : en
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ABSTRACT: Films deposited under various conditions were studied to improve our understanding of the influence of processing conditions on device performance. The key advantage of this technique over others is its high deposition rate, simplicity of operation and high conversion efficiency. Typical deposition times were two minutes and could be reduced to as low as 45 sec with little variation in performance. The four major parameters that influence the films prepared by close spaced sublimation, namely substrate temperature, source temperature, ambient pressure, and spacing were optimized for best device performance. The influence of each parameter on deposition rate and cell efficiency was also studied. The best cells produced by this technology had an efficiency of 13% with Voc=830 mV, FF= 74% and Jsc=21.1 mA/cm2.
Author: Goutam Mukherjee
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Languages : en
Pages : 0
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Sputter-deposited heteroepitaxial layers of (100) CdTe $\Vert$ (100) KBr prepared at growth temperatures of 300-325$\sp\circ$C are found to be p-type with high dark resistivities on the order of 2 $\times$ 10$\sp5$ ohm-cm. The epilayers are highly photoconducting. The photoconductivity $\sigma\sb{ph}$ (expressed as $\sigma\sb{ph} \propto f\sp{\gamma}$) is observed to exhibit a sublinear ($\gamma$ $\prec$ 1) dependence on illumination intensity f. Photo-Hall effect measurements show that the photoconductivity is due to change in carrier concentration and not due to any enhancement in the carrier mobility. Moreover, the photocurrent is carried by holes. Hall measurements on sputter-deposited epitaxial PbTe films have confirmed that samples prepared at high growth temperatures are n-type and those grown at low substrate temperatures are p-type, irrespective of the substrate bias applied during growth. The low temperature mobility values in the sputter-deposited samples are found to be limited by a temperature-independent neutral impurity scattering mechanism. One of the features of heteroepitaxial growth is the existence of a large density of structural defects at the interface due to lattice mismatch. (Abstract shortened by UMI.).
