Characterization, Electrical and Optical Properties of Chemically Deposited Thin Films of Some Metal Selenides PDF Download
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Author: Cesar Antonio Estrada-Mendizabal
Publisher:
ISBN:
Category :
Languages : en
Pages : 226
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Author: Cesar Antonio Estrada-Mendizabal
Publisher:
ISBN:
Category :
Languages : en
Pages : 226
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Author: Al-Mamun
Publisher:
ISBN:
Category : Copper selenides
Languages : en
Pages :
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Book Description
Author: Dr. Dhananjay Narayan Gujarathi
Publisher: Lulu.com
ISBN: 1329957903
Category :
Languages : en
Pages : 62
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Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 49
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Book Description
Among the 2D layered metal chalcogenide materials is tin selenide (SnSe), which belongs to group IV--VI that has attracted considerable attention due to its interesting structural and optical properties, hence it has potential applications in optoelectronics, photovoltaics, memory, energy storage, and catalysis. To date, SnSe films have been produced by exfoliation or chemical vapor deposition that produces flaky films. In this research, uniform, smooth and high quality SnSe thin films were grown over large area (5cm x 5cm) Si/SiO2 substrates using Atomic Layer Deposition (ALD). Films were grown over a temperature range of 350°C to 450°C, which exhibit p- type semiconductor characteristics. ALD is perfect for the growth of layered materials due to its precise controllability of film composition and thickness as the growth proceeds layer by layer. Structural and optical properties of the as-grown films were investigated using X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). These analyses show growth of 2 dimensional, orthorhombic phase films. Magnetic analysis shows a paramagnetic behavior. Back-gated transistors were fabricated for electrical characterization which showed p-type conductance, with an average hole mobility of 10 cm2/V.s and Ion/Ioff ratio of ~105.
Author:
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Category : Dissertations, Academic
Languages : en
Pages : 796
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Author: Gary Hodes
Publisher: CRC Press
ISBN: 9780203909096
Category : Science
Languages : en
Pages : 400
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Discussing specific depositions of a wide range of semiconductors and properties of the resulting films, Chemical Solution Deposition of Semiconductor Films examines the processes involved and explains the effect of various process parameters on final film and film deposition outcomes through the use of detailed examples. Supplying experimental res
Author: Cliff Orori Mosiori
Publisher: Anchor Academic Publishing (aap_verlag)
ISBN: 3954893460
Category : Social Science
Languages : en
Pages : 225
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Book Description
Thin films can be used to fabricate optoelectronic devices. Technology is currently focusing on ternary thin film composition because of their structure, inter-band transitions and other optical properties that can be maximized. This book discusses in detail the optical characteristics of ternary thin films and further investigates the behavior of Iron Zinc Sulphide, Lead Silver Sulphide, Copper Silver Sulphide, Copper Zinc Sulphide and Cadmium Zinc Sulphide. Thin films are of fundamental importance in modern technology.
Author: Holger T Grahn
Publisher: World Scientific Publishing Company
ISBN: 9813105151
Category : Science
Languages : en
Pages : 203
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Book Description
This book covers the physics of semiconductors on an introductory level, assuming that the reader already has some knowledge of condensed matter physics. Crystal structure, band structure, carrier transport, phonons, scattering processes and optical properties are presented for typical semiconductors such as silicon, but III-V and II-VI compounds are also included. In view of the increasing importance of wide-gap semiconductors, the electronic and optical properties of these materials are dealt with too.
Author: William Allen Feil
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Rongxin Wang
Publisher: Open Dissertation Press
ISBN: 9781361207796
Category :
Languages : en
Pages :
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Book Description
This dissertation, "Preparation and Post-annealing Effects on the Optical Properties of Indium Tin Oxide Thin Films" by Rongxin, Wang, 王榮新, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled PREPARATION AND POST-ANNEALING EFFECTS ON THE OPTICAL PROPERTIES OF INDIUM TIN OXIDE THIN FILMS Submitted by WANG Rong Xin for the degree of Doctor of Philosophy at The University of Hong Kong in April 2005 Many opto-electronic devices, such as III-V compound devices, liquid crystal displays, solar cells, organic and inorganic light emitting devices, and ultraviolet photodetectors, demand transparent electrode materials simultaneously having high electrical conductance. To meet the requirements for particular applications, a great deal of basic research and studies have been carried out on the electrical and optical properties of these materials. As a most promising candidate for such materials, indium tin oxide (ITO) has attracted interest in recent years. Furthermore, ITO has many unique properties such as excellent adhesion on the substrate, thermal stability and ease of patterning. The deposition of high-quality ITO thin films is a key step for successful application of ITO thin films as transparent electrode materials. To obtain optimal electrical and optical properties of ITO films, the growth parameters and conditions must be determined. Moreover, the optical and electrical properties of ITO contact layers, which can either be on the top side or the bottom side of a device, are influenced by various post-deposition treatments. For the present work, ITO thin films were deposited on glass and quartz substrates using e-beam evaporation with different deposition rates. The influence of substrate material, deposition rate, deposition gas environment and post-deposition annealing on the optical properties of the films was investigated in detail. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy was employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the substrate material, deposition rate, deposition gas environment and post-deposition annealing conditions strongly affect the chemical composition and the microstructure of the ITO films and these in turn influence the optical properties of the film. Oxygen incorporation transfers the In O phase to the In O phase and removes metallic In to form both indium oxide 2 3-x 2 3 phases. Both of these reactions are beneficial for the optical transmittance of ITO thin films. Moreover, it was found that the incorporation and decomposition reactions of oxygen can be controlled so as to change the optical properties of the ITO thin films reversibly. DOI: 10.5353/th_b3154617 Subjects: Thin films - Optical properties Indium compounds Annealing of metals
