Characterisation of Stripe Optical Waveguides Fabricated by Silicon Impurity Induced Disordering of GaAs PDF Download
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Author: A. C. Wismayer
Publisher:
ISBN:
Category : Communication
Languages : en
Pages :
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Author: A. C. Wismayer
Publisher:
ISBN:
Category : Communication
Languages : en
Pages :
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Book Description
Author: A. C. Wismayer
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 860
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Author: Tony Kai Tung Tang
Publisher:
ISBN:
Category :
Languages : en
Pages : 238
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The routing capabilities of waveguides defined by Zn, SiO$sb2$, and In/SiO$sb2$ Impurity-Induced Layer Disordering (IILD) of a single GaAs quantum-well graded barrier laser structure are investigated using raised-cosine S-bend geometries. The 3-dB transition length for a 100 $mu$m offset S-bend waveguides fabricated using the Zn, SiO$sb2$, or In/SiO$sb2$ IILD process is less than 300 $mu$m for near single-mode guides. In addition, vacancy-induced layer disordering (VILD) of the native quantum-well region is investigated and is shown to increase the band gap to a point at which the material is low-loss for radiation generated by a laser made from the native material. The 3-dB length for these blue-shifted waveguides decreases to about 230 $mu$m due to reduced mode conversion. This VILD technique is also used to fabricate lasers with various blue-shifted emission wavelengths. Secondary Ion Mass Spectroscopy (SIMS) is used to study the separate and co-diffusions of silicon and indium from thin film sources. Indium is inferred to have a higher diffusion coefficient than silicon in GaAs and AlGaAs and to result in a similar degree of impurity-induced disordering of the single quantum-well laser structure.
Author: Paul David Swanson
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Impurity induced layer disorder-delineated buried channel optical waveguide non-rectilinear routing structures are found to have loss properties equal to or better than other planar optical waveguides. With 3 dB loss angles of 3$spcirc$, for simple abrupt bends, and 7$spcirc$, for modified abrupt bends, and 3 dB transition lengths of $sim$300 $mu$m for S bends with a 100 $mu$m offset, these waveguides are capable of handling the routing requirements for many opto-electronic integrated circuit applications. A previously uncharacterized electro-absorption effect in a single quantum well graded barrier laser heterostructure was investigated as a means of providing electro-optic modulation and detection. This electroabsorption effect produced a change of over 100 cm$sp{-1}$ in the modal absorption coefficient with less than a volt change in bias. Based on these findings, the feasibility of using a single heterostructure for the integration of multiple optical devices is addressed.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 924
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Theses on any subject submitted by the academic libraries in the UK and Ireland.
Author: Holloway
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 252
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Author: Peter W. Epperlein
Publisher: John Wiley & Sons
ISBN: 1118481860
Category : Technology & Engineering
Languages : en
Pages : 522
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Book Description
This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 812
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Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
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