BIBLIOTHEQUE DE MODELES DU TRANSISTOR V. DMOS POUR LA SIMULATION DES CIRCUITS DE L'ELECTRONIQUE DE PUISSANCE PDF Download
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Author: Dominique Allain
Publisher:
ISBN:
Category :
Languages : fr
Pages : 137
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Book Description
APRES L'ETABLISSEMENT DU MODELE MATHEMATIQUE DU VDMOS QUI PREND EN COMPTE LES EFFETS DE CANAL COURT POUR LA ZONE ACTIVE AINSI QUE L'EFFET DES ELEMENTS PARASITES, ON SIMPLIFIE CELUI-CI POUR L'IMPLANTER DANS LE LOGICIEL SPICE EN VUE DE L'ETUDE DES "REGIMES DE COMMUTATION". LE DERNIER CHAPITRE CONCERNE LA VALIDATION DU MODELE IMPLANTE. L'OBJECTIF DE CE MEMOIRE EST DE PRESENTER UNE BIBLIOTHEQUE DE MODES DU TRANSISTOR VDMOS DE PUISSANCE, DESTINEE A LA SIMULATION DES CIRCUITS DE L'ELECTRONIQUE DE PUISSANCE
Author: Dominique Allain
Publisher:
ISBN:
Category :
Languages : fr
Pages : 137
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Book Description
APRES L'ETABLISSEMENT DU MODELE MATHEMATIQUE DU VDMOS QUI PREND EN COMPTE LES EFFETS DE CANAL COURT POUR LA ZONE ACTIVE AINSI QUE L'EFFET DES ELEMENTS PARASITES, ON SIMPLIFIE CELUI-CI POUR L'IMPLANTER DANS LE LOGICIEL SPICE EN VUE DE L'ETUDE DES "REGIMES DE COMMUTATION". LE DERNIER CHAPITRE CONCERNE LA VALIDATION DU MODELE IMPLANTE. L'OBJECTIF DE CE MEMOIRE EST DE PRESENTER UNE BIBLIOTHEQUE DE MODES DU TRANSISTOR VDMOS DE PUISSANCE, DESTINEE A LA SIMULATION DES CIRCUITS DE L'ELECTRONIQUE DE PUISSANCE
Author: Wladyslaw Grabinski
Publisher: Springer Science & Business Media
ISBN: 9048130468
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Author: Malgorzata Napieralska
Publisher:
ISBN:
Category :
Languages : fr
Pages : 204
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Book Description
UN MODELE NON LINEAIRE DU TRANSISTOR V.DMOS DE PUISSANCE A CANAL COURT DONT LES ELEMENTS NE DEPENDENT QUE DES DONNEES PHYSIQUES ET TECHNOLOGIQUES DU COMPOSANT EST PRESENTE. PAR ANALYSE DES REGIONS ACTIVES DE LA STRUCTURE DU COMPOSANT EN VUE DE L'ETUDE DES REGIMES DE COMMUTATION, CE MODELE EST SIMPLIFIE JUSQU'A UNE TOPOLOGIE COMPATIBLE AVEC LE SIMULATEUR SPICE. LES PROCEDURES D'ACQUISITION DE SES PARAMETRES SONT PRECISEES AINSI QUE LES TESTS DE VALIDATION. UNE BIBLIOTHEQUE INFORMATIQUE D'INTERRUPTEURS DE PUISSANCE MOS, DESTINEE A LA CONCEPTION DES CIRCUITS DE PUISSANCE EST CREE PAR CARACTERISATION DES TRANSISTORS (CANAL N ET P) COUVRANT LES GAMMES DE TENSION 50V-1000V ET DE COURANT 2A-50A. UN MODELE UNIFIE DU V.DMOS EST ENSUITE PROPOSE, QUI NECESSITE POUR UNE TECHNOLOGIE DONNEE DEUX PARAMETRES: CALIBRE EN TENSION ET SURFACE DE PUCE DU SILICIUM. UN PROGRAMME ETABLI, BASE SUR L'ENVIRONNEMENT HYPERCARD (MACINTOSH) ET COUPLE AVEC SPICE PERMET D'ETABLIR LES MODELES DE PRODUITS CATALOGUE ET CREER UN MODELE POUR DE NOUVEAUX COMPOSANTS. CETTE MODELISATION EST COMPLETEE PAR LA PRISE EN COMPTE DE LA TEMPERATURE DE CRISTAL AINSI QUE DIVERSES CONFIGURATIONS DE TEST. UN MACROMODELE DESTINE A RENDRE COMPTE DU COMPORTEMENT ELECTRIQUE SOUS CONTRAINTES RADIATIVES DES V.DMOS EST AUSSI ETABLI ET VALIDE PAR COMPARAISON ENTRE LES RESULTATS EXPERIMENTAUX ET LA SIMULATION. L'ELABORATION D'UN MONTAGE DE BRAS DE PONT A BASE DE TRANSISTORS MOS, ET SA SIMULATION PAR SPICE PERMET ENFIN DE METTRE EN EVIDENCE LA VALIDITE DU MODELE DANS CE TYPE D'APPLICATION EN PRENANT EN COMPTE DES PROBLEMES LIES A L'EXISTENCE DES ELEMENTS PARASITES DANS LES CIRCUITS DE L'ELECTRONIQUE DE PUISSANCE
Author: Christian C. Enz
Publisher: John Wiley & Sons
ISBN: 0470855452
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Author: Narain Arora
Publisher: World Scientific
ISBN: 9814365491
Category : Technology & Engineering
Languages : en
Pages : 633
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Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Author: Narain D. Arora
Publisher: Springer Science & Business Media
ISBN: 3709192471
Category : Computers
Languages : en
Pages : 628
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Book Description
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Author: Carlos Galup-Montoro
Publisher: World Scientific
ISBN: 9812568107
Category : Technology & Engineering
Languages : en
Pages : 445
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Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Henk C. de Graaff
Publisher: Springer Science & Business Media
ISBN: 3709190436
Category : Computers
Languages : en
Pages : 367
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Book Description
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Author: Wladyslaw Grabinski
Publisher: Springer
ISBN: 9789048171484
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Author: Adnan Hneine
Publisher:
ISBN:
Category :
Languages : fr
Pages : 184
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Book Description
L'approche de modélisation distribuée des composants bipolaires de puissance mise en œuvre de manière compacte par la résolution de l'équation de diffusion ambipolaire sous forme de décomposition en série de Fourier constitue un excellent compromis précision des résultats/temps de simulation. La mise en œuvre du moteur de calcul sous forme de ligne RC à paramètres variables en langage de description VHDL-AMS (IEEE 1076-1999) est présentée. La description du mécanisme de transport de charges dans les zones larges et peu dopées des composants de puissance, complétée par des modèles plus classiques des autres zones utilisées (émetteurs, région de charge d'espace ou de drift, canal MOS, couche tampon, etc...) permet de bâtir les modèles complets de diode PIN et de transistor IGBT. Ces différents modèles/sous-modèles de composants forment une bibliothèque qui permet une réutilisa- tion aisée dans d'autres contextes et par d'autres ingénieurs et ainsi une réduction du temps et du coût de conception des systèmes. Leur implantation en VHDL-AMS dans le logiciel Questa-ADMS permet de valider leur adaptation à la simulation des circuits de l'électronique de puissance et à leur prototypage virtuel. La température, intégrée à l'heure actuelle comme paramètre pourra à court terme être gérée en tant que quantité renvoyée par des modèles thermiques compacts. La méthodologie présentée associée aux caractéristiques du langage de description choisi permet d'envisager la création de modèles de nouveaux composants, issus de l'Intégration Fonctionnelle, par simple assemblage de différents sous-modèles. La possibilité de différents niveaux de description dans l'architecture de chaque sous- modèle autorise également une utilisation optimale à toutes les étapes du processus de conception des systèmes d'électronique de puissance.
