AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment PDF Download

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AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment PDF Author: 楊舜凱
Publisher:
ISBN:
Category :
Languages : en
Pages : 104

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AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment PDF Author: 楊舜凱
Publisher:
ISBN:
Category :
Languages : en
Pages : 104

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AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Liquid-phase Deposited High-k Gate Dielectrics

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Liquid-phase Deposited High-k Gate Dielectrics PDF Author: 吳祖儀
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ISBN:
Category :
Languages : en
Pages : 91

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Properties of AlGaN/GaN High Electron Mobility Transistors with Atomic Layer Deposited Gate Dielectric Using Structural Engineering

Properties of AlGaN/GaN High Electron Mobility Transistors with Atomic Layer Deposited Gate Dielectric Using Structural Engineering PDF Author: 吳展誥
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ISBN:
Category :
Languages : en
Pages : 128

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AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Performance with Al2O3/ZrO2 Stacked Gate Dielectric Layers

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Performance with Al2O3/ZrO2 Stacked Gate Dielectric Layers PDF Author: 黃晟瑜
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ISBN:
Category :
Languages : en
Pages : 84

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Investigation and Fabrication of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Transistors with Surface Treatment and the I-ZnO Gate Dielectric Layer

Investigation and Fabrication of AlGaN/GaN Metal-oxide-semiconductor High-electron Mobility Transistors with Surface Treatment and the I-ZnO Gate Dielectric Layer PDF Author: 邱雅蘭
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ISBN:
Category :
Languages : en
Pages : 109

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Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment

Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment PDF Author:
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ISBN:
Category :
Languages : en
Pages : 93

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High-performance Enhancement-mode AlGaN/GaN MOS-HEMTs with Fluorinated Stack Gate Dielectrics and Thin Barrier Layer*Project Supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516).

High-performance Enhancement-mode AlGaN/GaN MOS-HEMTs with Fluorinated Stack Gate Dielectrics and Thin Barrier Layer*Project Supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516). PDF Author:
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Category :
Languages : en
Pages :

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Abstract: We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2 O3 /La x Al1− x O3 /Al2 O3 stack ( x ≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Zirconium Oxide

Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Zirconium Oxide PDF Author:
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ISBN:
Category :
Languages : en
Pages : 76

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Enhancement Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Self-Aligned Gate-Recessed Process

Enhancement Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Self-Aligned Gate-Recessed Process PDF Author: 徐健軒
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ISBN:
Category :
Languages : en
Pages : 70

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Development of High-performance GaN-based Power Transistors

Development of High-performance GaN-based Power Transistors PDF Author:
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Category :
Languages : en
Pages :

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