Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Radiometric Temperature Measurements
Author:
Publisher: Academic Press
ISBN: 0123785650
Category : Science
Languages : en
Pages : 479
Book Description
This book describes the practice of radiation thermometry, both at a primary level and for a variety of applications, such as in the materials processing industries and remote sensing. This book is written for those who will a) apply radiation thermometry in industrial practice b) use radiation thermometers for scientific research, c) the radiation thermometry specialist in a national measurement institute d) developers of radiation thermometers who are working to innovate products for instrument manufacturers and e) developers non-contact thermometry methods to address challenging thermometry problems. The author(s) of each chapter were chosen from a group of international scientists who are experts in the field and specialist(s) on the subject matter covered in the chapter. A large number of references are included at the end of each chapter as a resource for those seeking a deeper or more detailed understanding. This book is more than a practice guide. Readers will gain in-depth knowledge in: (1) the proper selection of the type of thermometer; (2) the best practice in using the radiation thermometers; (3) awareness of the error sources and subsequent appropriate procedure to reduce the overall uncertainty; and (4) understanding of the calibration chain and its current limitations. - Coverage of all fundamental aspects of the radiometric measurements - Coverage of practical applications with details on the instrumentation, calibration, and error sources - Authors are from the national labs internationally leading in R&D in temperature measurements - Comprehensive coverage with large number of references
Publisher: Academic Press
ISBN: 0123785650
Category : Science
Languages : en
Pages : 479
Book Description
This book describes the practice of radiation thermometry, both at a primary level and for a variety of applications, such as in the materials processing industries and remote sensing. This book is written for those who will a) apply radiation thermometry in industrial practice b) use radiation thermometers for scientific research, c) the radiation thermometry specialist in a national measurement institute d) developers of radiation thermometers who are working to innovate products for instrument manufacturers and e) developers non-contact thermometry methods to address challenging thermometry problems. The author(s) of each chapter were chosen from a group of international scientists who are experts in the field and specialist(s) on the subject matter covered in the chapter. A large number of references are included at the end of each chapter as a resource for those seeking a deeper or more detailed understanding. This book is more than a practice guide. Readers will gain in-depth knowledge in: (1) the proper selection of the type of thermometer; (2) the best practice in using the radiation thermometers; (3) awareness of the error sources and subsequent appropriate procedure to reduce the overall uncertainty; and (4) understanding of the calibration chain and its current limitations. - Coverage of all fundamental aspects of the radiometric measurements - Coverage of practical applications with details on the instrumentation, calibration, and error sources - Authors are from the national labs internationally leading in R&D in temperature measurements - Comprehensive coverage with large number of references
Transport Simulation in Microelectronics
Author: Alfred Kersch
Publisher: Birkhäuser
ISBN: 303489080X
Category : Mathematics
Languages : en
Pages : 235
Book Description
Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad dresses three general areas of simulation which frequently arise in semicon ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.
Publisher: Birkhäuser
ISBN: 303489080X
Category : Mathematics
Languages : en
Pages : 235
Book Description
Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad dresses three general areas of simulation which frequently arise in semicon ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.
Radiative Properties of Semiconductors
Author: N.M. Ravindra
Publisher: Morgan & Claypool Publishers
ISBN: 1681741121
Category : Science
Languages : en
Pages : 139
Book Description
Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.
Publisher: Morgan & Claypool Publishers
ISBN: 1681741121
Category : Science
Languages : en
Pages : 139
Book Description
Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.
Advances in Heat Transfer
Author: James P. Hartnett
Publisher: Elsevier
ISBN: 0080493556
Category : Science
Languages : en
Pages : 478
Book Description
Advances in Heat Transfer presents review articles on topics of current interest. Each contribution starts from widely understood principles and brings the reader up to the forefront of the topic being addressed. The favorable response by the international scientific and engineering community to the 37 volumes published to date is an indication of the success of our authors in fulfilling this purpose. This is recommended reading for all mechanical engineers and researchers. - Provides an overview of review articles on topics of current interest - Bridges the gap between academic researchers and practitioners in industry - A long-running and prestigious series
Publisher: Elsevier
ISBN: 0080493556
Category : Science
Languages : en
Pages : 478
Book Description
Advances in Heat Transfer presents review articles on topics of current interest. Each contribution starts from widely understood principles and brings the reader up to the forefront of the topic being addressed. The favorable response by the international scientific and engineering community to the 37 volumes published to date is an indication of the success of our authors in fulfilling this purpose. This is recommended reading for all mechanical engineers and researchers. - Provides an overview of review articles on topics of current interest - Bridges the gap between academic researchers and practitioners in industry - A long-running and prestigious series
Rapid Thermal and Integrated Processing
Author:
Publisher:
ISBN:
Category : Rapid thermal processing
Languages : en
Pages : 914
Book Description
Publisher:
ISBN:
Category : Rapid thermal processing
Languages : en
Pages : 914
Book Description
Rapid Thermal Processing for Future Semiconductor Devices
Author: H. Fukuda
Publisher: Elsevier
ISBN: 0080540260
Category : Science
Languages : en
Pages : 161
Book Description
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
Publisher: Elsevier
ISBN: 0080540260
Category : Science
Languages : en
Pages : 161
Book Description
This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
Rapid Thermal and Integrated Processing V: Volume 429
Author: J. C. Gelpey
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 416
Book Description
This book is the latest in a continuing series on rapid thermal processing and related topics. It embraces a diversity of research, development and manufacturing activities that require rapid thermal and integrated processing techniques which are recognized by their acronyms, such as rapid thermal annealing (RTA), rapid thermal processing (RTP), rapid thermal chemical vapor deposition (RTCVP), rapid thermal oxidation (RTO), and others. This fifth anniversary volume reports notable advances in the use of rapid thermal techniques in processing science and technology, and for process control in industrial fabrication facilities. It is organized around progress obtained through: evaluation methodology; equipment and process modelling; temperature control; defects and diffusion associated with annealing; metallizations such as silicidation; novel processing of sol-gel and magnetic films; dielectric growth and deposition; and silicon or silicon-germanium film deposition.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 416
Book Description
This book is the latest in a continuing series on rapid thermal processing and related topics. It embraces a diversity of research, development and manufacturing activities that require rapid thermal and integrated processing techniques which are recognized by their acronyms, such as rapid thermal annealing (RTA), rapid thermal processing (RTP), rapid thermal chemical vapor deposition (RTCVP), rapid thermal oxidation (RTO), and others. This fifth anniversary volume reports notable advances in the use of rapid thermal techniques in processing science and technology, and for process control in industrial fabrication facilities. It is organized around progress obtained through: evaluation methodology; equipment and process modelling; temperature control; defects and diffusion associated with annealing; metallizations such as silicidation; novel processing of sol-gel and magnetic films; dielectric growth and deposition; and silicon or silicon-germanium film deposition.
Energy Research Abstracts
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 660
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 660
Book Description
The Encyclopedia of Advanced Materials
Author: David Bloor
Publisher: Pergamon
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 814
Book Description
Hardbound. In 1986 Michael Bever's Encyclopedia of Materials Science & Engineering defined the field of Materials Science.Since then research into how, by an adjustment to its molecular structure, the properties of a material can be adapted to perform specific applications has greatly increased. The Encyclopedia of Advanced Materials defines the limits of this new area of study, taking into account the many different views and perspectives encountered in research and thinking in the field, as well as emphasizing the multidisciplinary nature of the subject.Advanced Materials are defined as those where first consideration is given to the systematic synthesis and control of the structure of the material in order to provide a precisely tailored set of properties for demanding applications.Coverage includes: Advanced Ceramic Processing; Advanced Optical Materials and Displays; Composite Materials; Computer Mod
Publisher: Pergamon
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 814
Book Description
Hardbound. In 1986 Michael Bever's Encyclopedia of Materials Science & Engineering defined the field of Materials Science.Since then research into how, by an adjustment to its molecular structure, the properties of a material can be adapted to perform specific applications has greatly increased. The Encyclopedia of Advanced Materials defines the limits of this new area of study, taking into account the many different views and perspectives encountered in research and thinking in the field, as well as emphasizing the multidisciplinary nature of the subject.Advanced Materials are defined as those where first consideration is given to the systematic synthesis and control of the structure of the material in order to provide a precisely tailored set of properties for demanding applications.Coverage includes: Advanced Ceramic Processing; Advanced Optical Materials and Displays; Composite Materials; Computer Mod