Author: Ankur Beohar
Publisher: CRC Press
ISBN: 1003831125
Category : Technology & Engineering
Languages : en
Pages : 161
Get Book Here
Book Description
This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs) Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors Includes research problem statements with specifications and commercially available industry data in the appendix Presents Verilog-A model-based simulations for circuit analysis The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
Author: B. Jayant Baliga
Publisher: Springer Science & Business Media
ISBN: 1441959173
Category : Technology & Engineering
Languages : en
Pages : 573
Get Book Here
Book Description
During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.
Author: Márcio Cherem Schneider
Publisher: Cambridge University Press
ISBN: 052111036X
Category : Computers
Languages : en
Pages : 505
Get Book Here
Book Description
The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Author: U. Tietze
Publisher: Springer Science & Business Media
ISBN: 3642812414
Category : Technology & Engineering
Languages : en
Pages : 519
Get Book Here
Book Description
In the earlier stages of integrated circuit design, analog circuits consisted simply of type 741 operational amplifiers, and digital circuits of 7400-type gates. Today's designers must choose from a much larger and rapidly increasing variety of special integrated circuits marketed by a dynamic and creative industry. Only by a proper selection from this wide range can an economical and competitive solution be found to a given problem. For each individual case the designer must decide which parts of a circuit are best implemented by analog circuitry, which by conventional digital circuitry and which sections could be microprocessor controlled. In order to facilitate this decision for the designer who is not familiar with all these subjects, we have arranged the book so as to group the different circuits according to their field of application. Each chapter is thus written to stand on its own, with a minimum of cross-references. To enable the reader to proceed quickly from an idea to a working circuit, we discuss, for a large variety of problems, typical solutions, the applicability of which has been proved by thorough experimental investigation. Our thanks are here due to Prof. Dr. D. Seitzer for the provision of excellent laboratory facilities. The subject is extensive and the material presented has had to be limited. For this reason, we have omitted elementary circuit design, so that the book addresses the advanced student who has some back ground in electronics, and the practising engineer and scientist.
Author: Carlos Galup-montoro
Publisher: World Scientific
ISBN: 9814477974
Category : Technology & Engineering
Languages : en
Pages : 445
Get Book Here
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author: Norman Einspruch
Publisher: Elsevier
ISBN: 0323153135
Category : Technology & Engineering
Languages : en
Pages : 383
Get Book Here
Book Description
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Author: Mitiko Miura-Mattausch
Publisher: World Scientific
ISBN: 9812812059
Category : Technology & Engineering
Languages : en
Pages : 381
Get Book Here
Book Description
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
Author: Howard Huff
Publisher: Springer Science & Business Media
ISBN: 9783540210818
Category : Science
Languages : en
Pages : 740
Get Book Here
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author: Anil K. Maini
Publisher: John Wiley & Sons
ISBN: 9780470510513
Category : Technology & Engineering
Languages : en
Pages : 752
Get Book Here
Book Description
The fundamentals and implementation of digital electronics are essential to understanding the design and working of consumer/industrial electronics, communications, embedded systems, computers, security and military equipment. Devices used in applications such as these are constantly decreasing in size and employing more complex technology. It is therefore essential for engineers and students to understand the fundamentals, implementation and application principles of digital electronics, devices and integrated circuits. This is so that they can use the most appropriate and effective technique to suit their technical need. This book provides practical and comprehensive coverage of digital electronics, bringing together information on fundamental theory, operational aspects and potential applications. With worked problems, examples, and review questions for each chapter, Digital Electronics includes: information on number systems, binary codes, digital arithmetic, logic gates and families, and Boolean algebra; an in-depth look at multiplexers, de-multiplexers, devices for arithmetic operations, flip-flops and related devices, counters and registers, and data conversion circuits; up-to-date coverage of recent application fields, such as programmable logic devices, microprocessors, microcontrollers, digital troubleshooting and digital instrumentation. A comprehensive, must-read book on digital electronics for senior undergraduate and graduate students of electrical, electronics and computer engineering, and a valuable reference book for professionals and researchers.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814466581
Category : Technology & Engineering
Languages : en
Pages : 203
Get Book Here
Book Description
Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.
