Additives Screening Techniques and Process Characterization for Electroplating of Semiconductor Interconnects PDF Download
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Author: Lindsay Erin Boehme
Publisher:
ISBN:
Category : Chemical engineering
Languages : en
Pages : 197
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Book Description
All semiconductor devices incorporate metallic interconnects, which provide the electrical network within the device. The interconnects are fabricated by electroplating copper from electrolytes containing special additives, enabling bottom-up fill of the vias and trenches. The study herein focuses on identifying new additives screening techniques and characterizing the associated process parameters through systematic experimental investigation and analytical modeling.A new improved test for characterizing the efficacy of the additives system has been developed and validated as a replacement for the classical injection technique. Results of the test have been implemented in a quantitative model indicating the expected gap-fill in wafer plating of small features.Additionally, a computer-based model of the additives co-injection test has been developed. This model accounts for the flow field external to the features and characterizes the actual wafer plating process more precisely than previous models. Fitting experimental data to the model provides more accurate estimates of process parameters, including additive adsorption rates, than heretofore possible. Several process parameters were characterized. Temperature was found to affect additives (polyethylene glycol [PEG] serving as a suppressor and bis(3-sulfopropyl) disulfide [SPS] serving as anti-suppressor) activity. An optimal process temperature of ~30°C was identified, where the SPS depolarized electrode reverts to pure copper plating kinetics and maximal polarization is achieved. The effects of pH, in the range 0.5-2, on the deposition kinetics were found to be minor; however, corresponding effects on seed stability were substantial, with improved seed stability at the higher pH. Substituting chloride with bromide provided slight improvement in the deposition kinetics. With bromide, displacement of the suppressor by the anti-suppressor was slow compared to displacement in the presence of chloride, possibly indicating stronger binding of the suppressor to the copper substrate. The effect of PEG molecular weight was studied. PEG 4000 was found to provide optimal adsorption and displacement rates. Commercially available compounds were tested for suppression capability. Pluronic L31 exhibited the largest polarization (220 mV at a current density of 10 mA/cm2) among the tested additives.
Author: Lindsay Erin Boehme
Publisher:
ISBN:
Category : Chemical engineering
Languages : en
Pages : 197
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Book Description
All semiconductor devices incorporate metallic interconnects, which provide the electrical network within the device. The interconnects are fabricated by electroplating copper from electrolytes containing special additives, enabling bottom-up fill of the vias and trenches. The study herein focuses on identifying new additives screening techniques and characterizing the associated process parameters through systematic experimental investigation and analytical modeling.A new improved test for characterizing the efficacy of the additives system has been developed and validated as a replacement for the classical injection technique. Results of the test have been implemented in a quantitative model indicating the expected gap-fill in wafer plating of small features.Additionally, a computer-based model of the additives co-injection test has been developed. This model accounts for the flow field external to the features and characterizes the actual wafer plating process more precisely than previous models. Fitting experimental data to the model provides more accurate estimates of process parameters, including additive adsorption rates, than heretofore possible. Several process parameters were characterized. Temperature was found to affect additives (polyethylene glycol [PEG] serving as a suppressor and bis(3-sulfopropyl) disulfide [SPS] serving as anti-suppressor) activity. An optimal process temperature of ~30°C was identified, where the SPS depolarized electrode reverts to pure copper plating kinetics and maximal polarization is achieved. The effects of pH, in the range 0.5-2, on the deposition kinetics were found to be minor; however, corresponding effects on seed stability were substantial, with improved seed stability at the higher pH. Substituting chloride with bromide provided slight improvement in the deposition kinetics. With bromide, displacement of the suppressor by the anti-suppressor was slow compared to displacement in the presence of chloride, possibly indicating stronger binding of the suppressor to the copper substrate. The effect of PEG molecular weight was studied. PEG 4000 was found to provide optimal adsorption and displacement rates. Commercially available compounds were tested for suppression capability. Pluronic L31 exhibited the largest polarization (220 mV at a current density of 10 mA/cm2) among the tested additives.
Author: James Adolf
Publisher:
ISBN:
Category :
Languages : en
Pages : 363
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Book Description
Metallization of semiconductor interconnects by copper electroplating has been the standard industry practice for over ten years. The technology hinges on a special plating additives mixture, formulated empirically, that enables bottom-up metallization. Further extensions of the technology, to dual damascene features smaller than 22 nm, and at the other extreme, to the more challenging, micron scale, through silicon vias (TSV0́9s), hinge on the ability to quantitatively model and optimize the process. The goal of this work is to provide a straightforward, predictive model that applies to the metallization by plating on all feature scales, which will enable the optimization and extension of the process. A critical analysis of the TSV fill process is carried out, focusing on the challenges and differences in scaling from the dual-damascene nanoscale process. A comprehensive and predictive model for the bottom up plating, taking into account additives and copper transport, time-dependent competitive adsorption of the additives including their effect on the plating process, and the effect of the changing geometry and surface area due to plating, has been developed. Limitations associated with the widely varying scales are critically analyzed and corrections to the model accounting for transport limitations of both additives and copper in the relatively large TSV scale are provided. The utilization of the model to provide optimal additives concentrations for bottom-up fill of dual damascene scale features is demonstrated. Further, a model for the critical influence of a special class of nitrogen-based additives (the so-called 0́levelers0́9) on TSV0́9s fill is provided. Analytical treatment of migration effects due to the electrical field on ionic transport in stagnant media for general electrochemical systems is provided. Application of this analysis to the bottom-up fill process indicates that the copper transport limitations and depletion are far more significant than the ohmic effects, and hence, particularly in larger features such as those encountered in TSV0́9s, the use of supporting electrolyte should be minimized. A method is developed to experimentally determine the multiple, coupled additive parameters required for the application of the model, and a systematic approach for the screening of additives expected to provide superior fill is provided. A millifluidics experimental systems was developed that automates this analysis and provides superior experimental data. Commonly used additives (Polyethylene glycol (PEG), a plating suppressor, and bis-(3-sulfopropyl) disulfide (SPS), a plating accelerator) were analyzed and their adsorption and transport parameters determined. Throughout the thesis, a complete fill model is developed as well as the necessary tools to characterize and screen additives in order to achieve void free bottom-up fill in TSVs.
Author: Bernd O. Kolbesen
Publisher: The Electrochemical Society
ISBN: 9781566773485
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
.".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.
Author: Rohan Akolkar
Publisher:
ISBN:
Category :
Languages : en
Pages : 249
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Book Description
Author: G. S. Mathad
Publisher: The Electrochemical Society
ISBN: 9781566773904
Category : Science
Languages : en
Pages : 290
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Author: Ko-Ching Hou
Publisher:
ISBN:
Category :
Languages : en
Pages : 53
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Book Description
One of the most important packaging techniques is copper electroplating. A successful electroplating, whether for back-end-of-line (BEOL) interconnects or packaging applications, depends on finding the right additives for increasing plating quality or bottom-up fill, maintaining a stable bath composition and minimizing the impurity level in the plated copper. When it comes to changes in new barrier layer, seed layer and aspect ratio, challenges arise as the process flow becomes much more complicated.In silicon interconnect fabric approach, we aim to replace traditional printed circuit board (PCB) by silicon substrate. With silicon substrate, not only can we achieve high interconnect density but also high-power applications since silicon possesses outstanding thermal properties comparing with organic substrates such as PCB. However, a dense die integration requires a high-power delivery (0.7-1W/mm2) and III generates a huge amount of heat (0.5-0.7W/mm2). The power delivery through periphery I/O is not able to supply such a great amount of power (more than 50kW on 12-inch wafer). As a result, power has to be distributed through TWVs. An excellent copper electroplating process during the fabrication is a critical process since a good quality of plating provides lower IR drops and lower heat losses. In this thesis, we develop through wafer vias (TWVs) for Si-IF to deliver the power from the back of Si- IF to the front side of the wafer which can be used for potential wafer-scaled integration or attached with power delivery/cooling system. In this work, we first demonstrate the characterization of copper electroplating process including the uniformity test and surface roughness measurement. Then we move on to the development of a reliable fabrication flow of TWVs for Si-IF that enables 3D integration packaging.
Author: Mordechay Schlesinger
Publisher: John Wiley & Sons
ISBN: 0470167785
Category : Science
Languages : en
Pages : 755
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Book Description
The definitive resource for electroplating, now completely up to date With advances in information-age technologies, the field of electroplating has seen dramatic growth in the decade since the previous edition of Modern Electroplating was published. This expanded new edition addresses these developments, providing a comprehensive, one-stop reference to the latest methods and applications of electroplating of metals, alloys, semiconductors, and conductive polymers. With special emphasis on electroplating and electrochemical plating in nanotechnologies, data storage, and medical applications, the Fifth Edition boasts vast amounts of new and revised material, unmatched in breadth and depth by any other book on the subject. It includes: Easily accessible, self-contained contributions by over thirty experts Five completely new chapters and hundreds of additional pages A cutting-edge look at applications in nanoelectronics Coverage of the formation of nanoclusters and quantum dots using scanning tunneling microscopy (STM) An important discussion of the physical properties of metal thin films Chapters devoted to methods, tools, control, and environmental issues And much more A must-have for anyone in electroplating, including technicians, platers, plating researchers, and metal finishers, Modern Electroplating, Fifth Edition is also an excellent reference for electrical engineers and researchers in the automotive, data storage, and medical industries.
Author: K. Kondo
Publisher: The Electrochemical Society
ISBN: 1607686201
Category : Science
Languages : en
Pages : 140
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Book Description
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: Mohindar Seehra
Publisher: BoD – Books on Demand
ISBN: 1789232929
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
The use of copper, silver, gold and platinum in jewelry as a measure of wealth is well known. This book contains 19 chapters written by international authors on other uses and applications of noble and precious metals (copper, silver, gold, platinum, palladium, iridium, osmium, rhodium, ruthenium, and rhenium). The topics covered include surface-enhanced Raman scattering, quantum dots, synthesis and properties of nanostructures, and its applications in the diverse fields such as high-tech engineering, nanotechnology, catalysis, and biomedical applications. The basis for these applications is their high-free electron concentrations combined with high-temperature stability and corrosion resistance and methods developed for synthesizing nanostructures. Recent developments in all these areas with up-to-date references are emphasized.
