A Study of Spice Parameter Extraction for MOSFET Modeling with Emphasis on Small Geometry Effects in MOSFETS PDF Download
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Author: Christopher Anthony Freymuth
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 184
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Book Description
Author: Christopher Anthony Freymuth
Publisher:
ISBN:
Category : Metal oxide semiconductor field-effect transistors
Languages : en
Pages : 184
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Book Description
Author: Christopher A. Freymuth
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
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Book Description
Author: Narain Arora
Publisher: World Scientific
ISBN: 9814365491
Category : Technology & Engineering
Languages : en
Pages : 633
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Book Description
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 604
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Book Description
Author: Narain D. Arora
Publisher: Springer Science & Business Media
ISBN: 3709192471
Category : Computers
Languages : en
Pages : 628
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Book Description
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Author: Chenming Hu
Publisher: World Scientific
ISBN: 9814390968
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development.The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Author: Sai Subhash Sripada
Publisher:
ISBN: 9781339070025
Category : Electronic circuit design
Languages : en
Pages : 65
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Book Description
This paper proposes a simple extraction technique which can be used to extract device parameters of any power MOSFET easily. It only requires the use of transfer and output characteristic graphs to extract threshold voltage and transconductance and a few formulas to extract the parasitic capacitances of the power device. The extraction technique is presented in an easy to understand step by step procedure. The parameters extracted using this process are used to develop a spice model. Transient analysis is done for the extracted model and the resistive switching performance is compared with the datasheet in order to prove the effectiveness of the extraction technique used. Inductive switching is also done for the extracted model and the effect of varying the parameters of the MOSFET on inductive switching times is observed. Finally, this observation is then used to develop a new mathematical SiC power MOSFET model which has better inductive switching times than the extracted model and the thesis is concluded.
Author: Wladyslaw Grabinski
Publisher: Springer Science & Business Media
ISBN: 1402045565
Category : Technology & Engineering
Languages : en
Pages : 298
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Book Description
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
This thesis presents the work on analytical modeling and simulation of a silicon carbide (SiC) power MOSFET, model verification with test data, and device characterization and parameter extraction of the SPICE model. The development of temperature models for a lateral as well as a vertical MOSFET in SiC are also presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. Considering the SiC material processing limitations and feedback from the system level application group, an application specific SiC power MOSFET structure has been proposed. The device dimensions were chosen to obtain the desired specific on-resistance and breakdown voltage of the power MOSFET. A good agreement between the analytical model and the MEDICI simulation is demonstrated. The temperature models include effects of temperature on the threshold voltage, carrier mobility, the body leakage current, and the drain and source contact region resistances for a lateral MOSFET and the effects of temperature on the threshold voltage, carrier mobility, the body leakage current, drift region resistance and channel resistance for a vertical MOSFET. The temperature dependent compensating current elements are introduced in the model. These compensating currents contribute to the total current at high temperatures. A rigorous testing and characterization has been carried out on a 4H-SiC DIMOS transistor test device. SPICE parameters have been extracted from the measurements and a SPICE model for the DIMOS transistor has been developed. The models developed in this research will not only help the SiC device researchers in the device behavioral study but will also provide a SPICE model for circuit designers.
Author: Wen Lu
Publisher:
ISBN:
Category : Electronic circuit design
Languages : en
Pages : 200
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Book Description
