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Author: Fuad Al-Amoody
Publisher: LAP Lambert Academic Publishing
ISBN: 9783848448302
Category :
Languages : en
Pages : 128
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Book Description
This book presents devices which are fabricated using high energy gap ZnyCd1-ySe cladded ZnxCd1-xSe quantum dots (y>x). These QDs are pseudomorphic (nearly lattice-matched core and the shell of the dot)in nature which makes them have less stress and dislocation. The QD devices are unique as they utilize the pseudomorphic structure of these QDs. One of the devices mentioned in this book is a floating quantum dot gate nonvolatile memory where cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe). The cladded dots are grown using a novel improved methodology of photo-assisted microwave plasma metalorganic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The composition of quantum dot cladding, which relates to the value of y in ZnyCd1-ySe, is engineered by the intensity of ultraviolet light which controls the incorporation of zinc in ZnCdSe. The quantum dot quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots, as well as, two diverse types of devices are presented in this book. Also the fabrication of the QDs and the devices will be talked about in detail.
Author: Fuad Al-Amoody
Publisher: LAP Lambert Academic Publishing
ISBN: 9783848448302
Category :
Languages : en
Pages : 128
Get Book Here
Book Description
This book presents devices which are fabricated using high energy gap ZnyCd1-ySe cladded ZnxCd1-xSe quantum dots (y>x). These QDs are pseudomorphic (nearly lattice-matched core and the shell of the dot)in nature which makes them have less stress and dislocation. The QD devices are unique as they utilize the pseudomorphic structure of these QDs. One of the devices mentioned in this book is a floating quantum dot gate nonvolatile memory where cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe). The cladded dots are grown using a novel improved methodology of photo-assisted microwave plasma metalorganic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The composition of quantum dot cladding, which relates to the value of y in ZnyCd1-ySe, is engineered by the intensity of ultraviolet light which controls the incorporation of zinc in ZnCdSe. The quantum dot quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots, as well as, two diverse types of devices are presented in this book. Also the fabrication of the QDs and the devices will be talked about in detail.
Author: Fuad H Al-Amody
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages :
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Book Description
This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1–xSe-ZnyCd1–y Se QDs to have a low composition of zinc in the core than the cladding (x.
Author: Hassen Abdu
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
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Book Description
Conventional Flash memory devices face a scaling issue that will impede memory scaling beyond the 50nm node: a reliability issue involving the tunneling oxide thickness and charge retention. A possible solution is to replace the continuous floating gate, where charge is stored, with a segmented charge storage film, so that leakage through defects in the tunneling oxide would be localized. We first explored using quantum dots as possible floating gate replacements. After conducting simulations, we established the need for the smallest possible segmented structures. This led us to the use of molecular films as floating gates in non-volatile flash memories. As an example, a single organic molecule of 3,4,9,10 -parylene tetracarboxylic dianhydride (PTCDA) occupies lnm2 in area and is capable of storing and retaining a single charge. If a defect is present in the tunneling oxide below the floating gate, only a few molecules of PTCDA would be affected due to poor lateral conduction between PTCDA molecules. We can, therefore, project that such molecular thin films of PTCDA are likely to meet demanding size and packing density requirements of advancing flash memory technology.
Author: Su-Ting Han
Publisher: Woodhead Publishing
ISBN: 0128226064
Category : Technology & Engineering
Languages : en
Pages : 356
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Book Description
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. - Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more - Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures - Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Author: John E. Ayers
Publisher: CRC Press
ISBN: 1420069888
Category : Technology & Engineering
Languages : en
Pages : 468
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Book Description
Exponential improvement in functionality and performance of digital integrated circuits has revolutionized the way we live and work. The continued scaling down of MOS transistors has broadened the scope of use for circuit technology to the point that texts on the topic are generally lacking after a few years. The second edition of Digital Integrated Circuits: Analysis and Design focuses on timeless principles with a modern interdisciplinary view that will serve integrated circuits engineers from all disciplines for years to come. Providing a revised instructional reference for engineers involved with Very Large Scale Integrated Circuit design and fabrication, this book delves into the dramatic advances in the field, including new applications and changes in the physics of operation made possible by relentless miniaturization. This book was conceived in the versatile spirit of the field to bridge a void that had existed between books on transistor electronics and those covering VLSI design and fabrication as a separate topic. Like the first edition, this volume is a crucial link for integrated circuit engineers and those studying the field, supplying the cross-disciplinary connections they require for guidance in more advanced work. For pedagogical reasons, the author uses SPICE level 1 computer simulation models but introduces BSIM models that are indispensable for VLSI design. This enables users to develop a strong and intuitive sense of device and circuit design by drawing direct connections between the hand analysis and the SPICE models. With four new chapters, more than 200 new illustrations, numerous worked examples, case studies, and support provided on a dynamic website, this text significantly expands concepts presented in the first edition.
Author: John E. Ayers
Publisher: CRC Press
ISBN: 1315355175
Category : Technology & Engineering
Languages : en
Pages : 794
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Book Description
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Author: Vladimir V. Mitin
Publisher: Cambridge University Press
ISBN: 0521881722
Category : Technology & Engineering
Languages : en
Pages : 346
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Book Description
A comprehensive textbook on nanoelectronics covering the underlying physics, nanostructures, nanomaterials and nanodevices.
Author: Shigeo Shionoya
Publisher: CRC Press
ISBN: 1420005235
Category : Technology & Engineering
Languages : en
Pages : 1078
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Book Description
A benchmark publication, the first edition of the Phosphor Handbook set the standard for references in this field. Completely revised and updated, this second edition explores new and emerging fields such as nanophosphors, nanomaterials, UV phosphors, quantum cutters, plasma display phosphors, sol-gel and other wet phosphor preparation techniques, preparation through combustion, bioluminescence phosphors and devices, and new laser materials such as OLED. It also contains new chapters on the applications of phosphors in solid state lighting, photoionization of luminescent centers in insulating phosphors, and recent developments in halide-based scintillators. The handbook provides a comprehensive description of phosphors with an emphasis on practical phosphors and their uses in various kinds of technological applications. It covers the fundamentals, namely the basic principles of luminescence, the principle phosphor materials, and their optical properties. The authors describe phosphors used in lamps, cathode-ray tubes, x-ray, and ionizing radiation detection. They cover common measurement methodology used to characterize phosphor properties, discuss a number of related items, and conclude with the history of phosphor technology and industry.
Author: John Wilson
Publisher: Prentice Hall
ISBN:
Category : Science
Languages : en
Pages : 584
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Book Description
The Third Edition of this best-selling textbook continues the successful approach adopted by previous editions - It is an introduction to optoelectronics for all students, undergraduate or postgraduate, and practicing engineers requiring a treatment that is not too advanced but gives a good introduction to the quantitative aspects of the subject. The book aims to put special emphasis on the fundamental principles which underlie the operation of devices and systems. Readers will then be able to appreciate the operation of devices not covered in the book and to understand future developments within the subject. All the material in this edition has been fully updated.
Author: Supriya Karmakar
Publisher: Springer Science & Business Media
ISBN: 8132216350
Category : Technology & Engineering
Languages : en
Pages : 147
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Book Description
The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.
