Ultra-deep Reactive Ion Etching for Silicon Wankel Internal Combusion Engines PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Ultra-deep Reactive Ion Etching for Silicon Wankel Internal Combusion Engines PDF full book. Access full book title Ultra-deep Reactive Ion Etching for Silicon Wankel Internal Combusion Engines by Aaron Jay Knobloch. Download full books in PDF and EPUB format.
Author: Aaron Jay Knobloch
Publisher:
ISBN:
Category :
Languages : en
Pages : 296
Get Book Here
Book Description
Author: Aaron Jay Knobloch
Publisher:
ISBN:
Category :
Languages : en
Pages : 296
Get Book Here
Book Description
Author: Fabian Chavez Martinez
Publisher:
ISBN:
Category :
Languages : en
Pages : 196
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Electromechanical devices
Languages : en
Pages : 530
Get Book Here
Book Description
Author: Ronald A. Powell
Publisher: North-Holland
ISBN:
Category : Microelectronics
Languages : en
Pages : 320
Get Book Here
Book Description
This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Author: Ankita Verma
Publisher:
ISBN:
Category : Etching
Languages : en
Pages : 89
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub. 4 and controlling the passivation rate and stoichiometry using a CF.sub. 2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.
Author: Matthew Kurt Senesky
Publisher:
ISBN:
Category :
Languages : en
Pages : 390
Get Book Here
Book Description
Author: John Kangchun Perng
Publisher:
ISBN:
Category : Lithography, Electron beam
Languages : en
Pages :
Get Book Here
Book Description
This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-ratio) have been demonstrated using the modified three-pulse process. Capacitive resonators, SiBAR and IBAR devices have been fabricated using the process developed in this work. IBARs (15MHz) with ultra-high Q (210,000) have been reported.
Author: J. W. Coburn
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 104
Get Book Here
Book Description
Author: Junghoon Yeom
Publisher:
ISBN:
Category :
Languages : en
Pages : 196
Get Book Here
Book Description
