Triple Metal Double Gate (TM-Dg) Mosfet PDF Download
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Author: Achinta Baidya
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659149511
Category :
Languages : en
Pages : 76
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Book Description
The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi-gate devices provide a better scalability option due to its excellent immunity to short-channel effects. This work focuses on the performance analysis of ultra-thin body Triple Metal Double Gate(TM-DG) MOSFET implemented with the high-k dielectric in gate oxide. The TMDG MOSFETs and its electrical characteristics variation especially short channel effects(SCEs) have been simulated and analyzed. optimal doping in the channel region can provide a better device performance in terms of drive current, ION/IOFF ratio, etc., keeping the SCEs within reasonable limits. The above device has been optimized with TCAD (Sentaurus TCAD)simulations and it has been found that the TMDG MOSFETs offers better transconductance, subthreshold swing, ION/IOFF ratio in sub 100 nm regimes as compared to the conventional DG MOSFETs.
Author: Achinta Baidya
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659149511
Category :
Languages : en
Pages : 76
Get Book Here
Book Description
The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi-gate devices provide a better scalability option due to its excellent immunity to short-channel effects. This work focuses on the performance analysis of ultra-thin body Triple Metal Double Gate(TM-DG) MOSFET implemented with the high-k dielectric in gate oxide. The TMDG MOSFETs and its electrical characteristics variation especially short channel effects(SCEs) have been simulated and analyzed. optimal doping in the channel region can provide a better device performance in terms of drive current, ION/IOFF ratio, etc., keeping the SCEs within reasonable limits. The above device has been optimized with TCAD (Sentaurus TCAD)simulations and it has been found that the TMDG MOSFETs offers better transconductance, subthreshold swing, ION/IOFF ratio in sub 100 nm regimes as compared to the conventional DG MOSFETs.
Author: Shubham Tayal
Publisher: Science, Technology, and Management
ISBN: 9780367639693
Category : Electrochemistry
Languages : en
Pages : 0
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Book Description
This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies.
Author: Shubham Tayal
Publisher: CRC Press
ISBN: 1000438783
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Author: Vinu V. Das
Publisher: Springer
ISBN: 3319116290
Category : Computers
Languages : en
Pages : 234
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Book Description
This book constitutes the thoroughly refereed post-conference proceedings of the Second International Joint Conference in Signal Processing and Information Technology, SPIT 2012, held in Dubai, UAE, in September 2012. The 32 papers included in this volume were carefully reviewed and selected from 330 submissions. The papers cover research and development activities in computer science, information technology, computational engineering, image and signal processing, and communication.
Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Author: Rabindranath Bera
Publisher: Springer
ISBN: 9811079013
Category : Technology & Engineering
Languages : en
Pages : 923
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Book Description
The book provides insights of International Conference in Communication, Devices and Networking (ICCDN 2017) organized by the Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim, India during 3 – 4 June, 2017. The book discusses latest research papers presented by researchers, engineers, academicians and industry professionals. It also assists both novice and experienced scientists and developers, to explore newer scopes, collect new ideas and establish new cooperation between research groups and exchange ideas, information, techniques and applications in the field of electronics, communication, devices and networking.
Author: Angsuman Sarkar
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3110455455
Category : Technology & Engineering
Languages : en
Pages : 404
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Book Description
This book teaches basic and advanced concepts, new methodologies and recent developments in VLSI technology with a focus on low power design. It provides insight on how to use Tanner Spice, Cadence tools, Xilinx tools, VHDL programming and Synopsis to design simple and complex circuits using latest state-of-the art technologies. Emphasis is placed on fundamental transistor circuit-level design concepts.
Author: Debashis Dutta
Publisher: Springer Nature
ISBN: 9813297751
Category : Technology & Engineering
Languages : en
Pages : 1004
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Book Description
This book comprises select proceedings of the International Conference on VLSI, Communication and Signal processing (VCAS 2018). It looks at latest research findings in VLSI design and applications. The book covers a wide range of topics in electronics and communication engineering, especially in the area of microelectronics and VLSI design, communication systems and networks, and image and signal processing. The contents of this book will be useful to researchers and professionals alike.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: Sanyog Rawat
Publisher: Springer Nature
ISBN: 9811662460
Category : Technology & Engineering
Languages : en
Pages : 679
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Book Description
This book includes high-quality papers presented at Proceedings of First International Conference on Computational Electronics for Wireless Communications (ICCWC 2021), held at National Institute of Technology, Kurukshetra, Haryana, India, during June 11–12, 2021. The book presents original research work of academics and industry professionals to exchange their knowledge of the state-of-the-art research and development in computational electronics with an emphasis on wireless communications. The topics covered in the book are radio frequency and microwave, signal processing, microelectronics and wireless networks.
